Characterizations Of Zr/Si1-x-yGexCy After Rapid Thermal Annealing

1998 ◽  
Vol 533 ◽  
Author(s):  
V. Aubry-Fortuna ◽  
M. Barthula ◽  
F. Meyer ◽  
A. Eyal ◽  
C. Cytermann ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Barrier ◽  
Rapid Thermal Annealing ◽  
Residual Strain ◽  
Strain Relaxation ◽  
Small Strain ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Final Compound

AbstractIn this work, we have investigated the reaction between Zr and SiGeC alloys after Rapid Thermal anneals performed at 800°C for 5 min. The interactions of the metal with the alloy have been investigated by X-Ray diffraction. Four crystal X-Ray diffraction was also performed to measure the residual strain in the epilayer. The final compound of the reaction is the C49- Zr(Si1-xGex)2 phase. The C49 film contains the same Ge concentration as in the as-deposited Si1-x-yGexCy layer. This suggests that no Ge-segregation occurs during annealing. Only a small strain relaxation is detected in the unreacted SiGe epilayer during the reaction. The addition of C in the epilayer prevents any strain relaxation. These results are in contrast with those observed in systems with Ti and Co, and show that the system Zr-Si-Ge is much more stable. Schottky barrier heights have been also measured: annealing leads to a slight decrease of the barrier without any degradation of the contact. The resistivity of the C49 film is about 80 μΩcm. These results indicate that Zr may be a good candidate for contacts on IV-IV alloys in term of thermal stability.

Epitaxial tilt of partially relaxed InGaAs layers grown on (100) GaAs substrates

1992 ◽  
Vol 70 (10-11) ◽  
pp. 838-842
Author(s):  
P. Maigné ◽  
A. P. Roth ◽  
C. Desruisseaux ◽  
D. Coulas
Keyword(s):  
Residual Strain ◽  
Gaas Substrate ◽  
Strain Relaxation ◽  
Azimuthal Angle ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Monoclinic Symmetry ◽  
X Ray ◽  
Mismatch Strain ◽  
Gaas Substrates

The structural properties of partially relaxed InxGa1−xAs layers grown on (100) GaAs substrates have been investigated, using high-resolution X-ray diffraction, in order to better understand the mechanisms responsible for the relaxation of the mismatch strain. From symmetric [400] reflections recorded as functions of the azimuthal angle [Formula: see text], the (100) InGaAs planes are found to be tilted with respect to the (100) GaAs substrate planes. The tilt magnitude is first seen to decrease then to increase with layer thickness. The direction of the tilt changes from [01-1] to [00-1] in the range of thickness investigated. From [422] asymmetric reflections, the average in-plane lattice parameter, the indium composition as well as the percentage of relaxation can be measured. Our values for relaxation are in qualitative agreement with the Dodson and Tsao model of strain relaxation (Appl. Phys. Lett. 51, 1710 (1987)). In addition, our data show an anisotropy in residual strain along <011> directions. This anisotropy increases with the amount of strain relieved and changes the crystal symmetry of the cell from tetragonal to monoclinic. This monoclinic symmetry can be characterized by an angle β that measures the angle between 90° and the inner angles of the new crystallographic cell. As for the anisotropy in residual strain, |3 increases with the amount of strain relieved. Correlations between tilt magnitude and tilt direction with the formation of 60° type dislocations are discussed.

Mapping the Strain State of 3C-SiC/Si (001) Suspended Structures Using μ-XRD

2016 ◽  
Vol 858 ◽  
pp. 274-277 ◽  
Author(s):  
Gerard Colston ◽  
Stephen D. Rhead ◽  
Vishal Ajit Shah ◽  
Oliver J. Newell ◽  
Igor P. Dolbnya ◽  
...  
Keyword(s):  
Convenient Method ◽  
Residual Strain ◽  
Tensile Strain ◽  
Strain State ◽  
Strain Relaxation ◽  
Lattice Parameters ◽  
Raman Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Direct Measurements

The residual strain has been mapped across suspended 3C-SiC membranes and wires using synchrotron based micro X-ray diffraction (μ-XRD). Residual tensile strain is observed to relax slightly upon suspension in both sets of structures. Similar maps were acquired by calculating the residual strain from the shift in 3C-SiC Raman peaks. Comparable trends in strain relaxation are observed by both methods, although the sensitivity of μ-XRD is higher using our measurement conditions. While Raman shift provides a fast and convenient method for mapping strain variations, it cannot give direct measurements of the lattice parameters that can be achieved with μ-XRD, making these techniques excellent complimentary methods of mapping residual strain in 3C-SiC.

Quaternary Alloys InxAlyGa1−x-yAs Grown on GaAs with A Compositionally-Step-Graded Buffer

1992 ◽  
Vol 263 ◽  
Author(s):  
C. Fan ◽  
D. W. Shih ◽  
M. W. Hansen ◽  
J. Chen ◽  
P. Z. Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Lattice Mismatch ◽  
Chemical Reactivity ◽  
Compressive Strain ◽  
X Ray Diffraction ◽  
Quaternary Alloys ◽  
X Ray ◽  
Mismatch Strain ◽  
Barrier Heights ◽  
Gaas Substrates

ABSTRACTFundamental bandgaps and Schottky barrier heights of strain-relaxed quaternary InxAlyGa1−x-yAs alloys with 0 < x < 0.35 and 0 < y < 0.30 were studied. The alloys were grown on GaAs substrates by molecular beam epitaxy. The lattice mismatch (up to 2.5%) and mismatch strain were accommodated by a compositionally-step-graded buffer. A residual compressive strain of less than 0.5% was determined by x-ray diffraction. Measured Schottky barrier heights v.s. bandgap deviate from the values predicted by the “commonanion” rule. This behavior is attributed to the compositional inhomogeneities and chemical reactivity of the air-exposed InAlGaAs surfaces.

The Evolution of Strain Relaxation Close to The Critical Thickness

1993 ◽  
Vol 317 ◽  
Author(s):  
P. Kidd ◽  
P.F. Fewster
Keyword(s):  
Residual Strain ◽  
Strain Field ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray ◽  
Local Relaxation ◽  
Homogeneous Strain

ABSTRACTHigh resolution X-ray diffraction space mapping has been used to follow the change in the distribution of residual strain and localised relaxation in low mismatched epitaxial layers. Using this new technique, we have obtained a series of diffraction space maps of partially relaxed epitaxial layers of In.1Ga.9As on GaAs. The layers have different thicknesses and hence different degrees of strain relaxation. The diffuse scatter close to the Bragg peaks provides information about the imperfect and distorted regions in the structure and this has allowed us to examine the extent and distribution of residual strain close to the dislocations. We have followed the evolution of local relaxation, which is confined initially to regions around isolated dislocations, through to the case of overlapping dislocation strain fields, leading to a more homogeneous strain field distribution and microscopic and macroscopic tilting of the layers.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

Optical and structural prorerties of InAs epilayer on graded InGaAs

2001 ◽  
Vol 696 ◽  
Author(s):  
Gu Hyun Kim ◽  
Jung Bum Choi ◽  
Joo In Lee ◽  
Se-Kyung Kang ◽  
Seung Il Ban ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Residual Strain ◽  
Molecular Beam ◽  
Lattice Mismatch ◽  
Peak Position ◽  
Excitation Intensity ◽  
Total Thickness ◽  
Ingaas Layer ◽  
X Ray Diffraction ◽  
X Ray

AbstractWe have studied infrared photoluminescence (PL) and x-ray diffraction (XRD) of 400 nm and 1500 nm thick InAs epilayers on GaAs, and 4 nm thick InAs on graded InGaAs layer with total thickness of 300 nm grown by molecular beam epitaxy. The PL peak positions of 400 nm, 1500 nm and 4 nm InAs epilayer measured at 10 K are blue-shifted from that of InAs bulk by 6.5, 4.5, and 6 meV, respectively, which can be largely explained by the residual strain in the epilayer. The residual strain caused by the lattice mismatch between InAs and GaAs or graded InGaAs/GaAs was observed from XRD measurements. While the PL peak position of 400 nm thick InAs layer is linearly shifted toward higher energy with increase in excitation intensity ranging from 10 to 140 mW, those of 4 nm InAs epilayer on InGaAs and 1500 nm InAs layer on GaAs is gradually blue-shifted and then, saturated above a power of 75 mW. These results suggest that adopting a graded InGaAs layer between InAs and GaAs can efficiently reduce the strain due to lattice mismatch in the structure of InAs/GaAs.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Study of Thermal Behaviour of EPDM/SBR Blends and Carbon Nanocoatings Deposited by Sputtering

2021 ◽  
Vol 875 ◽  
pp. 116-120
Author(s):  
Muhammad Alamgir ◽  
Faizan Ali Ghauri ◽  
Waheed Qamar Khan ◽  
Sajawal Rasheed ◽  
Muhammad Sarfraz Nawaz ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Weight Loss ◽  
Thermogravimetric Analysis ◽  
Thermal Behavior ◽  
Thermal Behaviour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of

In this study, the effect of SBR concentration (10 Phr, 20 Phr & 30 Phr ) on the thermal behavior of EPDM/SBR blends was studied. Thermogravimetric analysis (TGA) was used to check weight loss of samples as function of temperature by heating upto 600°C. X-ray diffraction (XRD) was performed to determine quality and % crystallinity of the elastomer blends. It was seen that % crystallinity improved with an increase in the content of SBR in EPDM/SBR blends. TGA revealed that the thermal stability of EPDM/SBR blends has improved by 17% than neat EPDM. Carbon nano-coatings produced by sputtering have no beneficial influence on thermal behaviour of elastomers.

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

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