Characterization of SiGeC Using Pt(SiGeC) Silicide Schottky Contacts

1998 ◽  
Vol 533 ◽  
Author(s):  
Jeff J. Peterson ◽  
Charles E. Hunt ◽  
McDonald Robinson ◽  
Robin SCott
Keyword(s):  
Fermi Level ◽  
Conduction Band ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Epitaxial Layers ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
Xrd Studies ◽  
P Type

AbstractMaterial and electrical characterization of n-type and p-type Si1-x-yGex Cy epitaxial layers on Si(100) was performed using silicided platinum Schottky contacts. XRD studies show Pt silcidation of SiGeC proceeds from non-reacted Pt to Pt2(SiGeC) and completes with the Pt(SiGeC) phase similar to Pt/Si silicides, but Pt silicide reactions with SiGeC are shown to require higher temperatures than Pt reactions with Si. Electrical characterization of Pt(SiGeC) contacts to n-type Sil1-x-yGexCx/Si shows rectifying behavior with constant barrier heights of 0.67eV independent of composition, indicating Fermi level pinning relative to the SiGeC conduction band is occurring. Pt(SiGeC) contacts to p-type Si1-x-yGexCy/Si are also rectifying with barrier heights that track the variation of the SiGeC energy bandgap.

Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1162-1167 ◽  
Author(s):  
Nan-Jian Wu ◽  
Tamotsu Hashizume ◽  
Hideki Hasegawa ◽  
Yoshihito Amemiya
Keyword(s):  
Fermi Level ◽  
Electrochemical Process ◽  
Schottky Contacts ◽  
Fermi Level Pinning ◽  
Barrier Heights

Barrier heights and Fermi level pinning in metal contacts on p-type GaN

2020 ◽  
Vol 116 (21) ◽  
pp. 213506 ◽  
Author(s):  
Sumaiya Wahid ◽  
Nadim Chowdhury ◽  
Md Kawsar Alam ◽  
Tomás Palacios
Keyword(s):  
Fermi Level ◽  
Metal Contacts ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
P Type

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts

2006 ◽  
Vol 89 (24) ◽  
pp. 242117 ◽  
Author(s):  
H. B. Yao ◽  
D. Z. Chi ◽  
R. Li ◽  
S. J. Lee ◽  
D.-L. Kwong
Keyword(s):  
Inversion Layer ◽  
Electrical Characterization ◽  
Schottky Contacts

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

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