Electrical Characterization of Crystallized—Silicon Thin Films

1985 ◽  
Vol 53 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Characterization ◽  
Electrical Measurements ◽  
Silicon Thin Films ◽  
Thin Film Capacitors ◽  
Current Voltage ◽  
Transient Capacitance ◽  
Electronic Defects

ABSTRACTA review is presented on the application of electrical measurements to evaluate the existence and effects of residual electronic defects in crystallized—silicon thin films. Experimental techniques include current—voltage characterization, electronbeam—induced conductivity, transient—capacitance measurements on thin—film capacitors, transient—conductance spectroscopy on thin—film transistors, and photoconductivity.

scholarly journals Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

2015 ◽  
Vol 3 (7) ◽  
pp. 1468-1472 ◽  
Author(s):  
Thomas Lenz ◽  
Moses Richter ◽  
Gebhard J. Matt ◽  
Norman A. Luechinger ◽  
Samuel C. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Transport ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.

scholarly journals MORPHOLOGICAL AND ELECTRICAL CHARACTERIZATION OF HYBRID THIN-FILM COMPOSED OF TITANIA NANOCRYSTALS, POLY (3-HEXYLTHIOPHENE) AND PIPER BETLE LINN

2016 ◽  
Vol 78 (3) ◽  
Author(s):  
Salmah Mohd Ghazali ◽  
Hasiah Salleh ◽  
Mohd Sabri Mohd Ghazali ◽  
Ahmad Nazri Dagang ◽  
Azmi Zakaria ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Impedance ◽  
Electrical Characterization ◽  
Morphological Characterization ◽  
Piper Betle ◽  
Hybrid Thin Film ◽  
Electrical Conductivities ◽  
Hybrid Thin Films

In this research, the effect of scan numbers of titania nanocrystals (TiO2 NCs) on the morphological and electrical characteristics of hybrid thin-films is investigated. These hybrid thin-films consist of a combination of organic (Piper Betle Linn extraction and Poly (3-hexytlthiophene) (P3HT)) and inorganic TiO2 NCs (anatase structure) materials. These hybrid thin-films are fabricated in bilayer heterojunction of ITO/TiO2 NCs/P3HT/Piper Betle Linn via electrochemistry method using Electrochemical Impedance Spectroscopy (EIS). The scan numbers of TiO2 NCs are varied by 1, 3 and 5 number of scans. The morphological characterization is carried out via Field Emission Scanning Electron Microscopy (FESEM) meanwhile the electrical characteristic of the hybrid thin-film is measured by using four point probes. FESEM image indicates the particle size was found to be around 17-34 nm. The increment of scan number of TiO2 NCs from one to five scan numbers of TiO2 NCs in bilayers thin films showed that the atomic percentage of titanium decrease from 5.23% to 2.20%. This result indicates that as the thickness of thin films increases, the electrons required more energy to excite into conduction band of TiO2. Meanwhile, the electrical conductivities of hybrid solar cell increase from 0.385 Scm-1 to 0.389 Scm-1 as the scan numbers of TiO2 increase from one to three, however the electrical conductivity decrease to 0.346 Scm-1 at five scan numbers. As a conclusion, this study shows that the morphological and electrical properties of hybrid thin-films can be significantly affected by the scan number of TiO2 NCs.

scholarly journals Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

2015 ◽  
Vol 33 (4) ◽  
pp. 669-676 ◽  
Author(s):  
Piotr Firek ◽  
Michał Wáskiewicz ◽  
Bartłomiej Stonio ◽  
Jan Szmidt
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Characterization ◽  
Ion Sensors ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Capacitor

AbstractThis work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

Thermo-switchable Polymer Dielectrics

2011 ◽  
Vol 1312 ◽  
Author(s):  
Ross S. Johnson ◽  
Fenil M. Kholwadwala ◽  
Shawn M. Dirk
Keyword(s):  
Thin Film ◽  
Elevated Temperatures ◽  
Main Chain ◽  
Electrical Characterization ◽  
Phenylene Vinylene ◽  
Polymer Backbone ◽  
Polymer Main Chain ◽  
Thin Film Capacitors ◽  
Leaving Groups

ABSTRACTWe are interested in utilizing the thermo-switchable properties of precursor poly(p-phenylene vinylene) (PPV) polymers to develop capacitor dielectrics that will fail at specific temperatures due to the material irreversibly switching from an insulator to a conducting polymer. By utilizing different leaving groups on the polymer main chain, the temperature at which the polymer transforms into a conductor can be varied over a range of temperatures. Electrical characterization of thin-film capacitors prepared from several precursor PPV polymers indicates that these materials have good dielectric properties until they reach elevated temperatures, at which point conjugation of the polymer backbone effectively disables the device. Here, we present the synthesis, dielectric processing, and electrical characterization of a new thermo-switchable polymer dielectric.

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