scholarly journals Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

2015 ◽  
Vol 3 (7) ◽  
pp. 1468-1472 ◽  
Author(s):  
Thomas Lenz ◽  
Moses Richter ◽  
Gebhard J. Matt ◽  
Norman A. Luechinger ◽  
Samuel C. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Transport ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.

Nonlinear Current-Voltage Characteristics of Homojunctions Made by Zinc Oxide Single Crystals

1996 ◽  
Vol 458 ◽  
Author(s):  
Takeshi Harada ◽  
Yoshinobu Nakamura ◽  
Akira Kishimoto ◽  
Naobumi Motohira ◽  
Hiroaki Yanagida
Keyword(s):  
Zinc Oxide ◽  
Single Crystals ◽  
Electrical Characterization ◽  
Earth Metal ◽  
Chemical Vapor ◽  
Current Voltage ◽  
Zno Varistors ◽  
Zno Crystal ◽  
Single Boundary

ABSTRACTZinc oxide (ZnO) single crystals are grown by the traditional chemical vapor reaction method and ZnO crystal pairs with a single boundary are successfully obtained. The obtained specimens with one ZnO–ZnO boundary (ZnO homojunction) show nonlinear current-voltage (I–V) characteristics without the addition of Bi2O3, CoO, MnO2, and/or rare earth metal oxides. A specimen with higher breakdown voltage shows superior nonlinearity with negative resistivity in its I–V characteristics. Electrical characterization of the ZnO homojunction is conducted and extremely slow response with the current (or voltage) stress is confirmed. The phenomenon had never been observed in commercial ZnO varistors. The surface temperature of the ZnO homojunction is enhanced by larger applied current. The effect of the Joule heat on the nonlinearity in the I–V curves of the ZnO homojunction is discussed.

Characterization of Monolayer Formation on Aluminum-Doped Zinc Oxide Thin Films

Langmuir ◽  
2008 ◽  
Vol 24 (2) ◽  
pp. 433-440 ◽  
Author(s):  
Crissy L. Rhodes ◽  
Simon Lappi ◽  
Daniel Fischer ◽  
Sharadha Sambasivan ◽  
Jan Genzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Oxide Thin Films ◽  
Monolayer Formation ◽  
Aluminum Doped Zinc Oxide

Temperature-Dependent Electrical Characterization of Amorphous Indium Zinc Oxide Thin-Film Transistors

2017 ◽  
Vol 64 (8) ◽  
pp. 3183-3188 ◽  
Author(s):  
Keun Heo ◽  
Kyung-Sang Cho ◽  
Jun Young Choi ◽  
Sangmin Han ◽  
Yun Seop Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Temperature Dependent ◽  
Indium Zinc Oxide

Optical and electrical characterization of transparent Ga-doped ZnO thin films grown by atmospheric spray pyrolysis using diethylzinc solution

2013 ◽  
Vol 10 (7-8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Minoru Oshima ◽  
Akiko Ide ◽  
Akiko Mochihara ◽  
Kenji Yoshino ◽  
Yujin Tanikemoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Electrical Characterization ◽  
Zno Thin Films ◽  
Doped Zno

Structural, Optical, and Electrical Characterization of ZnO and Al-doped ZnO Thin Films Deposited by MOCVD

2009 ◽  
pp. n/a-n/a ◽  
Author(s):  
Maria Elena Fragalà ◽  
Graziella Malandrino ◽  
Maria Michela Giangregorio ◽  
Maria Losurdo ◽  
Giovanni Bruno ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Zno Thin Films ◽  
Doped Zno

scholarly journals Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

2015 ◽  
Vol 33 (4) ◽  
pp. 669-676 ◽  
Author(s):  
Piotr Firek ◽  
Michał Wáskiewicz ◽  
Bartłomiej Stonio ◽  
Jan Szmidt
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Characterization ◽  
Ion Sensors ◽  
Si Substrates ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Mis Capacitor

AbstractThis work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

scholarly journals Electrical and optical properties of dip coated Al-doped ZnO thin films

2021 ◽  
Vol 22 (48) ◽  
Author(s):  
Ram Phul Yadav ◽  
Krishana Bahadur Rai ◽  
Shankar Prasad Shrestha
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Dip Coating ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Starting Solution ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno ◽  
Dip Coating Technique ◽  
Deposited Films

Undoped and Aluminum doped Zinc Oxide thin films were synthesized by dip coating technique. The electrical properties of the films were studied due to the Aluminum doping, starting solution aging and sample aging. The sheet resistance of ZnO:Al films was minimum at 2.5 at % whereas carrier concentration is maximum. Both undoped and aluminum doped Zinc Oxide thin films were found to be highly transparent lying in between 65 - 79 % in the wavelength range 367 nm to 1038 nm. The band gap of deposited films changed slightly from 3.22 eV to 3.27 eV.

Electrical Characterization of Crystallized—Silicon Thin Films

1985 ◽  
Vol 53 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Characterization ◽  
Electrical Measurements ◽  
Silicon Thin Films ◽  
Thin Film Capacitors ◽  
Current Voltage ◽  
Transient Capacitance ◽  
Electronic Defects

ABSTRACTA review is presented on the application of electrical measurements to evaluate the existence and effects of residual electronic defects in crystallized—silicon thin films. Experimental techniques include current—voltage characterization, electronbeam—induced conductivity, transient—capacitance measurements on thin—film capacitors, transient—conductance spectroscopy on thin—film transistors, and photoconductivity.

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