Stress Evolution During Growth of Sputtered Ni/Cu Multilayers

1998 ◽  
Vol 528 ◽  
Author(s):  
Vidya Ramaswamy ◽  
Bruce M. Clemens ◽  
William D. Nix
Keyword(s):  
Stress Relaxation ◽  
Relaxation Process ◽  
Relaxation Mechanism ◽  
In Situ Measurements ◽  
Stress Evolution ◽  
Uniform Compression ◽  
Uniform Tension ◽  
Defect Densities ◽  
High Defect Densities

AbstractResults from in-situ measurements of stress during growth of (111)-textured Ni/Cu multilayers with small and large bilayer periods are presented. In multilayers with small bilayer periods, Ni is in uniform tension and Cu in uniform compression. This behavior is modeled as the growth of a coherent multilayer with alloying in the layers. In multilayers with large bilayer periods, stress relaxation is observed but the measured stresses are much lower than expected based on a Mathews-Blakeslee relaxation process. An alternative stress relaxation mechanism based on high defect densities is presented and discussed.

Erratum: “In situ measurements of stress evolution for nanotwin formation during pulse electrodeposition of copper” [J. Appl. Phys. 105, 023521 (2009)]

2010 ◽  
Vol 108 (9) ◽  
pp. 099901 ◽  
Author(s):  
Di Xu ◽  
Vinay Sriram ◽  
Vidvuds Ozolins ◽  
Jenn-Ming Yang ◽  
K. N. Tu ◽  
...  
Keyword(s):  
In Situ Measurements ◽  
Pulse Electrodeposition ◽  
Stress Evolution

In situ measurements of stress evolution for nanotwin formation during pulse electrodeposition of copper

2009 ◽  
Vol 105 (2) ◽  
pp. 023521 ◽  
Author(s):  
Di Xu ◽  
Vinay Sriram ◽  
Vidvuds Ozolins ◽  
Jenn-Ming Yang ◽  
K. N. Tu ◽  
...  
Keyword(s):  
In Situ Measurements ◽  
Pulse Electrodeposition ◽  
Stress Evolution

Layered intermetallic compounds and stress evolution in Sn and Ni(P) films

2007 ◽  
Vol 22 (7) ◽  
pp. 2025-2031 ◽  
Author(s):  
Jae Yong Song
Keyword(s):  
Phase Transformation ◽  
Tensile Stress ◽  
Intermetallic Compounds ◽  
In Situ Measurements ◽  
The Self ◽  
Stress Evolution

In situ measurements of stresses due to the phase transformation in Sn and Ni(P) films were analyzed relating to the formation of layered intermetallic compounds such as Ni3Sn4, Ni3Sn2, Ni3P, and the crystallization of Ni(P) films. When Sn/Ni(11.7P) films were heated up to 480 °C, the first tensile stress developed due to formation of Ni3Sn4 and Ni3P around 220 °C, and the second one appeared at 335 °C due to formation of Ni3Sn2 as well as the self-crystallization of Ni(11.7P). For Sn/Ni(3P), a tensile stress developed mildly with the temperature between 300 and 410 °C due to formation of Ni3Sn2 and precipitation of Ni3P. The onset temperatures of self-crystallization of Ni(P) and Ni3P precipitation decreased due to the Ni–Sn reaction.

Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography

2018 ◽  
Vol 924 ◽  
pp. 176-179
Author(s):  
Jian Qiu Guo ◽  
Yu Yang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Swetlana Weit ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Relaxation Process ◽  
Direct Observation ◽  
Misfit Strain ◽  
Interfacial Dislocation ◽  
Concentration Difference ◽  
X Ray ◽  
High Temperature Heat Treatment ◽  
Basal Plane Dislocation

During 4H silicon carbide (4H-SiC) homoepitaxy and post-growth processes, the development of stress relaxation has been observed, in which interfacial dislocations (IDs) are formed at the epilayer/substrate interface, relaxing the misfit strain induced by the nitrogen doping concentration difference between the epilayer and substrate. It is widely believed that an interfacial dislocation is created by the glide of a mobile segment of a basal plane dislocation (BPD) in the substrate or epilayer towards the interface, leaving a trailing edge component right at the interface. However, direct observation of such mechanisms has not been made in SiC before. In this work, we present an in situ study of the stress relaxation process, in which a specimen cut from a commercial 4H-SiC homoepitaxial wafer undergoes the stress relaxation process during a high-temperature heat treatment while sequential synchrotron white beam X-ray topographs were recorded simultaneously. Based on the dynamic observation of this process, it can be concluded that thermal stress plays a role in the relaxation process while the increased misfit strain at elevated temperature most likely drives the formation of an interfacial dislocation.

In-situ Study on Effects of Annealing Temperature and Mo Interlayer on Stress Relaxation Behaviors of Pure Al Films on Glass Substrates

2006 ◽  
Vol 924 ◽  
Author(s):  
Young-Bae Park ◽  
Soo-Jung Hwang ◽  
Yong-Duk Lee ◽  
Ja-Young Jung ◽  
Young-Chang Joo
Keyword(s):  
Stress Relaxation ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Isothermal Annealing ◽  
Relaxation Mechanism ◽  
Glass Substrates ◽  
In Situ Study ◽  
Induced Stress ◽  
Measured Stress

ABSTRACTThe in-situ SEM observation of real-time hillock evolution in pure Al thin films on glass substrate during isothermal annealing at 194°C was analyzed quantitatively to understand the compressive stress relaxation mechanism by focusing on the effect of Mo interlayer between Al film and glass substrate. There is a good correlation between the hillock-induced stress relaxation and the measured stress relaxation by wafer curvature method. It is also clearly shown that the existence of Mo interlayer plays an important role in hillock formation probably due to the large difference in interfacial diffusivity of Al films.

Immediate effects of stretch on muscle contractility

1959 ◽  
Vol 196 (4) ◽  
pp. 807-810 ◽  
Author(s):  
Robert S. Alexander
Keyword(s):  
Smooth Muscle ◽  
Stress Relaxation ◽  
Relaxation Process ◽  
Striated Muscle ◽  
Contractile Response ◽  
Progressive Increase ◽  
Muscle Contractility ◽  
Resting Tension ◽  
Muscle Models

A study has been made of changes in the contractile response in striated muscle (isolated frog gastrocnemius) and smooth muscle (puppy bladder in situ) during the stress relaxation which follows sudden stretch. In both types of muscle, there is a progressive increase in the peak contractile response as partial decay of the stretched resting tension occurs. With large stretches of striated muscle and with any significant stretch of smooth muscle, this phenomenon is followed by a further decay in resting tension without alteration in the magnitude of the contractile response. Immediately after sudden stretch, there is a brief period during which the contractile response may be reduced. These results are interpreted in the light of theoretical muscle models, and it is emphasized that part of the stress relaxation process appears to involve the lengthening of shortened contractile links so that they become actively contractile.

In-situ Measurement of Viscous Flow of Thermal Silicon Dioxide Thin Films at High Temperature

1996 ◽  
Vol 446 ◽  
Author(s):  
Chia-Liang Yu ◽  
Paul A. Flinn ◽  
John C. Bravman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Stress Relaxation ◽  
Silicon Dioxide ◽  
Viscous Flow ◽  
Relaxation Process ◽  
Structural Relaxation ◽  
Wafer Curvature ◽  
Thermal Oxide

AbstractWith a newly constructed high temperature wafer curvature system, we measured significant viscous flow of thermal oxides at temperatures as low as 800°C. In-situ measurements were performed at temperatures between 800°C and 1100°C for wet and dry thermal oxide films of various thicknesses. We found that dry oxides have higher stresses and slower stress relaxation compared to wet oxides grown at higher temperatures. The viscosity of thermal oxide thin films was found to increase with time during relaxation and a structural relaxation process is suggested to explain this phenomenon.

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