Conducting Thin Films of Ruthenium Oxide Prepared by Mocvd

1998 ◽  
Vol 514 ◽  
Author(s):  
P. Hones ◽  
C.-H. Kohli ◽  
R. Sanjinés ◽  
F. Lévy ◽  
T. Gerfin ◽  
...  
Keyword(s):  
Thin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Resistivity Measurement ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputtered Films ◽  
Before And After

ABSTRACTConducting thin films of RuO2 were grown at temperatures down to 623K on glass by metalorganic chemical vapor deposition (MOCVD). Tris-trifluoroacetylacetonate-ruthenium(III) (Ru(tfa)3) served as precursor. Smooth, specular and well adherent films were deposited, if the reaction gas contained water. The films were investigated by X-ray diffraction, SEM, and fourprobe resistivity measurement. Growth kinetics were also studied by in situ ellipsometry. The results are compared with films prepared by d.c. reactive sputtering before and after annealing. The properties of the MOCVD films, in particular the resistivity (ρ down to 72 μΩcm), are comparable to CVD films deposited at much higher temperatures and sputtered films after high temperature annealing.

Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuOx Substrates

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Chien H. Peng
Keyword(s):  
Thin Films ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Composition Control ◽  
Oxide Substrates ◽  
Temperature Deposition ◽  
Titanium Ethoxide

AbstractTransparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.

In Situ Heteroepitaxial Bi2Sr2CaCu2O8 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 335 ◽  
Author(s):  
Frank Dimeo ◽  
Bruce W. Wessels ◽  
Deborah A. Neumayer ◽  
Tobin J. Marks ◽  
Jon L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Phase ◽  
Growth Conditions ◽  
X Ray Diffraction ◽  
Metalorganic Chemical

AbstractBi2Sr2CaCu2O8 thin films have been prepared in situ by low pressure metalorganic chemical vapor deposition using fluorinated β–diketonate precursors. The influence of the growth conditions on the oxide phase stability and impurity phase formation was examined as well as the superconducting properties of the films. Thin films deposited on LaAIO3 substrates were epitaxial as confirmed by x-ray diffraction measurements, including θ-2θ and φ scans. Four probe resistivity measurements showed the films to be superconducting with a maximum Tc0 of 90 K without post annealing. This Tc0 is among the highest reported for thin films of the BSCCO (2212) phase, and approaches reported bulk values.

Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition Near the Morphotropic Phase Boundary

2002 ◽  
Vol 748 ◽  
Author(s):  
Keisuke Saito ◽  
Toshiyuki Kurosawa ◽  
Takao Akai ◽  
Shintaro Yokoyama ◽  
Hitoshi Morioka ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Composition Range ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
Pzt Thin Films ◽  
X Ray

ABSTRACT200-nm-thick Pb(Zrx,Ti1-x)O3 (PZT) thin films with zirconium composition in the range from 0% to 65% were epitaxially grown on (001)c SrRuO3 (SRO)//SrTiO3 (STO) single crystal substrates by pulsed metalorganic chemical vapor deposition (pulsed MOCVD). Constituent crystallographic phases were characterized by high-resolution X-ray diffraction reciprocal space mapping. It was found that PZT thin films having zirconium composition from 45% to 60% show mixed tetragonal and pseudocubic phases and their lattice parameters remained constant in this composition range.

Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

2005 ◽  
Vol 902 ◽  
Author(s):  
Yong Kwan Kim ◽  
Shintaro Yokoyama ◽  
Risako Ueno ◽  
Hitoshi Morioka ◽  
Osami Sakata ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Remanent Polarization ◽  
Domain Switching ◽  
Fatigue Behavior ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Film Capacitor ◽  
X Ray

AbstractWe performed x-ray diffraction measurements by using highly brilliant synchrotron radiation on epitaxial Pb(Zr0.35Ti0.65)O3 film capacitor structures. Small regions of 300-nm-thick epitaxial Pb(Zr,Ti)O3 thin films with Pt and SrRuO3 top electrodes were measured after applying various numbers of switching cycles of the electric field. Epitaxial Pb(Zr,Ti)O3 thin films were prepared on epitaxial (100)cSrRuO3/(100)SrTiO3 substrates by pulsed-metalorganic chemical vapor deposition. The volume faction of c-domain and remanent polarization was plotted against the number of switching cycles. In the both capacitors, the Vc increased as the switching cycle increased independent of fatigue behavior.

The Effects of Domain Structure on the Electro-Optic Response of Potassium Niobate Thin Films

1996 ◽  
Vol 453 ◽  
Author(s):  
M. J. Nystrom ◽  
B. W. Wessels
Keyword(s):  
Thin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Technique ◽  
Multidomain Structure ◽  
Electro Optic ◽  
Domain Reorientation

AbstractEpitaxial potassium niobate films have been deposited by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction of the films deposited on (100) spinel substrates shows (110) and (001) reflections, indicating a multidomain structure. The electro-optic properties of the thin films were measured using a transmission technique. Effective electro-optic coefficients as large as 470 pm/V were observed. The observed electro-optic response was dominated by domain reorientation effects.

Effects of thermal annealing on the texture of La0.67Sr0.33MnO3 thin films

2001 ◽  
Vol 16 (7) ◽  
pp. 1887-1889 ◽  
Author(s):  
Lamartine Meda ◽  
LaQuita Kennon ◽  
Cristiane Bacaltchuk ◽  
Hamid Garmestani ◽  
Klaus H. Dahmen
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Simple Cubic ◽  
Heat Treated ◽  
Face Centered

Thin films of La0.67Sr0.33MnO3 (LSMO) were prepared at 670 °C on LaAlO3 (LAO) and SrTiO3 (STO) substrates by liquid-delivery metalorganic chemical vapor deposition. X-ray diffraction analysis 2¸/¸ and pole figure scans showed that the films are epitaxial with (001)LSMO//(001)LAO and (001)LSMO//(001)STO. The crystal structure of LSMO/LAO was indexed as face-centered cubic with a double cell and LSMO/STO as simple cubic. Electron microscopy revealed square facets and elongated grain features. Films heat-treated between 700 and 800 °C on LAO resulted in a structural change, while those on STO showed an increase in texture.

Electric-field-induced lattice distortion in epitaxial BiFeO3 thin films as determined by in situ time-resolved x-ray diffraction

2017 ◽  
Vol 111 (8) ◽  
pp. 082907 ◽  
Author(s):  
Seiji Nakashima ◽  
Osami Sakata ◽  
Hiroshi Funakubo ◽  
Takao Shimizu ◽  
Daichi Ichinose ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Lattice Distortion ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
X Ray ◽  
Bifeo3 Thin Films
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