Hydrogen On Semiconductor Surfaces
Keyword(s):
ABSTRACTWe review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.
1985 ◽
Vol 3
(4)
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pp. 1093
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1986 ◽
Vol 4
(3)
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pp. 1396-1399
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1992 ◽
Vol 96
(11)
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pp. 4602-4608
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1987 ◽
Vol 5
(4)
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pp. 692-693
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1980 ◽
Vol 72
(9)
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pp. 5234-5240
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1991 ◽
Vol 95
(19)
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pp. 7415-7422
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1982 ◽
pp. 211-232