The chemisorption of acetylene and ethylene on Rh(111): A low energy electron diffraction (LEED), high resolution electron energy loss (ELS), and thermal desorption mass spectrometry (TDS) study

1980 ◽  
Vol 72 (9) ◽  
pp. 5234-5240 ◽  
Author(s):  
L. H. Dubois ◽  
D. G. Castner ◽  
G. A. Somorjai
Keyword(s):  
Mass Spectrometry ◽  
High Resolution ◽  
Electron Diffraction ◽  
Energy Loss ◽  
Low Energy ◽  
Desorption Mass Spectrometry ◽  
Low Energy Electron Diffraction ◽  
Resolution Electron ◽  
Low Energy Electron ◽  
Electron Energy Loss

Hydrogen On Semiconductor Surfaces

1998 ◽  
Vol 513 ◽  
Author(s):  
J. A. Schaefer ◽  
T. Balster ◽  
V. Polyakov ◽  
U. Rossow ◽  
S. Sloboshanin ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Semiconductor Surfaces ◽  
Hydrogen Passivation ◽  
Low Energy Electron Diffraction ◽  
Resolution Electron ◽  
Low Energy Electron ◽  
Electron Energy Loss

ABSTRACTWe review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.

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