The Role of the In Source IN InN Growth from Molecular Beams

1998 ◽  
Vol 512 ◽  
Author(s):  
S. M. Donovan ◽  
B. Gila ◽  
J. D. MacKenzie ◽  
K. N. Lee ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Molecular Beams ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Structural Quality ◽  
Surface Mobility ◽  
Gas Source ◽  
Oxygen Contamination ◽  
Gas Source Mbe ◽  
Carbon Concentrations

ABSTRACTInN has been grown in a gas-source MBE system using an RF nitrogen plasma source and standard TMI, solution TMI and solid In. Both solid and solution TMI produce InN with electron and carbon concentrations ≥ 1020 cm−3. Solution TMI-derived material, however, contains significantly less oxygen (8 × 1018 cm−3 vs. ≥ 1020 cm−3 for solid TMI). While the amine used to liquefy the TMI helps to displace the ether believed to be responsible for the oxygen contamination, it also appears to interfere with the growth, resulting in poorer morphology than for standard TMI. While solid In produced the lowest carrier concentration (≤ mid-1018 cm−3), it also produced the worst morphology of the sources examined, presumably due to poor surface mobility. Based on this data, it appears that carbon can play a significant role in the electrical properties of InN, and that the In source is critical in determining the structural quality.

Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 162 ◽  
Author(s):  
Z. Sitar ◽  
M. J. Paisley ◽  
B. Yan ◽  
R. F. Davis
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Structural Defects ◽  
Effusion Cell ◽  
Gas Source ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Gas Source Mbe ◽  
Inversion Domain Boundaries ◽  
Resonance Plasma

ABSTRACTSingle crystal cubic or hexagonal GaN thin films have been grown on various substrates, using a modified gas source MBE technique. A standard effusion cell was employed for the evaporation of gallium. A compact electron cyclotron resonance plasma source was used to activate the nitrogen prior to deposition. The films were examined by transmission electron microscopy. The major defects in the wurtzite GaN were double positioning boundaries, inversion domain boundaries, and dislocations. The zinc-blende GaN showed microtwins, stacking faults, and dislocations. The connection between the observed structural defects and the poor electrical properties of GaN is noted.

Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

1998 ◽  
Vol 189-190 ◽  
pp. 390-394 ◽  
Author(s):  
H Okumura ◽  
H Hamaguchi ◽  
T Koizumi ◽  
K Balakrishnan ◽  
Y Ishida ◽  
...  
Keyword(s):  
Nitrogen Plasma ◽  
Atomic Nitrogen ◽  
Gas Source ◽  
Gas Source Mbe

Morphology and Interface chemistry of the Initial Growth of GAN and ALN on α-SIC and Sapphire

1991 ◽  
Vol 237 ◽  
Author(s):  
Z. Sitar ◽  
L. S. Smith ◽  
M. J. Paisley ◽  
R. F. Davis
Keyword(s):  
Molecular Nitrogen ◽  
Three Dimensional ◽  
Plasma Source ◽  
Layer By Layer ◽  
Initial Growth ◽  
Interface Chemistry ◽  
Ecr Plasma ◽  
Gas Source ◽  
Nitride Formation ◽  
Gas Source Mbe

ABSTRACTThe morphology and interface chemistry occurring during the initial stages of growth of GaN and A1N layers has been obtained. Films were grown using gas source MBE equipment containing an ECR plasma source to activate molecular nitrogen. The experiments consisted of sequential depositions of about one monolayer thick films and XPS analysis. Evidence for silicon nitride formation on the SiC surface was obtained from the studies of both the Si oxidation states and the substrate peak intensity dependence on film thickness. The growth of GaN on sapphire appeared to occur via the Stranski-Krastanov mode, while the growth on SiC showed characteristics of three-dimensional growth. AlN grew in a layer-by-layer mode on both substrates.

CBED study of low-temperature InP grown by gas source MBE

1993 ◽  
Vol 51 ◽  
pp. 810-811
Author(s):  
R. Rajesh ◽  
M.J. Kim ◽  
J.S. Bow ◽  
R.W. Carpenter ◽  
G.N. Maracas
Keyword(s):  
Low Temperature ◽  
Second Phase ◽  
Material System ◽  
Ion Milling ◽  
Electrical Measurements ◽  
Gas Source ◽  
Structural And Electrical Properties ◽  
The One ◽  
Lt Inp ◽  
Gas Source Mbe

In our previous work on MBE grown low temperature (LT) InP, attempts had been made to understand the relationships between the structural and electrical properties of this material system. Electrical measurements had established an enhancement of the resistivity of the phosphorus-rich LT InP layers with annealing under a P2 flux, which was directly correlated with the presence of second-phase particles. Further investigations, however, have revealed the presence of two fundamentally different types of precipitates. The first type are the surface particles, essentially an artefact of argon ion milling and containing mostly pure indium. The second type and the one more important to the study are the dense precipitates in the bulk of the annealed layers. These are phosphorus-rich and are believed to contribute to the improvement in the resistivity of the material.The observation of metallic indium islands solely in the annealed LT layers warranted further study in order to better understand the exact reasons for their formation.

Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBE

2013 ◽  
Vol 378 ◽  
pp. 607-610 ◽  
Author(s):  
Mikaela Elagin ◽  
P. Schulz ◽  
Mstislav Elagin ◽  
M.P. Semtsiv ◽  
H. Kirmse ◽  
...  
Keyword(s):  
Dual Channel ◽  
Gas Source ◽  
Highly Strained ◽  
Gas Source Mbe

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs Band Offsets

2005 ◽  
Vol 864 ◽  
Author(s):  
Homan B. Yuen ◽  
Robert Kudrawiec ◽  
K. Ryczko ◽  
S.R. Bank ◽  
M.A. Wistey ◽  
...  
Keyword(s):  
Theoretical Calculations ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Band Offset ◽  
Dilute Nitride ◽  
Band Offsets ◽  
Conduction Band Offset ◽  
Energy Transitions ◽  
Gaas Structure ◽  
Gaas Laser

AbstractHeterojunction band offsets of GaNAsSb/GaAs, GaInNAsSb/GaAs, and GaInNAsSb/GaNAs/GaAs quantum well (QW) structures were measured by photoreflectance (PR) spectroscopy. These samples were grown by solid-source molecular beam epitaxy using a radio-frequency nitrogen plasma source. PR spectra were collected from the QW structures and the energy transitions were obtained. The experimental data of the QW energy transitions were analyzed by theoretical calculations. Using predetermined values such as QW thickness and composition, unknown factors such as the heterojunction band offsets were able to be determined. For the GaN0.02As0.87Sb0.11/GaAs structure, we found that Qc≈0.5. For Ga0.62In0.38N0.026As0.954Sb0.02/GaAs, we found that Qc≈0.8. This value is similar to the antimony free dilute-nitride material GaInNAs since the small amount of antimony does not affect the band offsets. For the technologically important Ga0.61In0.39N0.023As0.957Sb0.02/GaN0.027As0.973/GaAs laser structure, we found that the GaInNAsSb/GaNAs QW had a conduction band offset of 144 meV and a valence band offset of 127 meV. With a greater understanding of the band structure, more advanced GaInNAsSb laser devices can be obtained.

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