Investigation Of Microplasma Breakdown In 4H Silicon Carbide

1998 ◽  
Vol 512 ◽  
Author(s):  
Uwe Zimmermann ◽  
Anders Hallén ◽  
Andrey O. Konstantinov ◽  
Bo Breitholtz
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Measurement Techniques ◽  
Electrical Measurement ◽  
Parallel Plane ◽  
Turn On ◽  
Forward Current ◽  
Current Densities ◽  
Microplasma Breakdown

ABSTRACTReverse bias breakdown behaviour of high quality 4H silicon carbide p-n diodes was investigated, using optical and electrical measurement techniques. Most of the sample diodes suffered from early breakdown phenomena in the form of microplasmas at about 80% of the calculated parallel plane breakdown voltage for the diodes, as evident from measured I-V curves. A group of these microplasmas could be correlated to micropipes, identified by optical microscopy, while a large number of microplasmas were caused by other defects and inhomogenities in the space charge region under reverse bias. The same spots that revealed early breakdown phenomena under reverse bias also showed a different electroluminescence (EL) behaviour under low forward current densities compared to those areas with a homogeneous breakdown behaviour. However, even diodes containing one or more micropipes in the region of the junction showed good rectifying behaviour up to two third of the parallel plane breakdown voltage, where the turn-on of a microplasma was observed.

Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

2000 ◽  
Vol 338-342 ◽  
pp. 1319-1322
Author(s):  
N.V. Dyakonova ◽  
Pavel A. Ivanov ◽  
V.A. Kozlov ◽  
Michael E. Levinshtein ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD

2014 ◽  
Vol 778-780 ◽  
pp. 791-794 ◽  
Author(s):  
Kohei Ebihara ◽  
Yasuki Yamamoto ◽  
Yoshiyuki Nakaki ◽  
Sunao Aya ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Breakdown Voltage ◽  
Reverse Bias ◽  
Parallel Plane ◽  
Power Devices ◽  
Edge Termination ◽  
Varying Thickness ◽  
High Breakdown Voltage ◽  
Tcad Simulation

Edge termination guaranteeing high breakdown voltage and robustness in its fabrication are required in SiC power devices. We newly employed the VLD edge termination for 3.3 kV-rated SiC SBDs, which was formed by Al ion implantation using a resist mask having a varying thickness. The breakdown voltage is recorded to be over 96% of the parallel-plane breakdown voltage, and the reverse bias characteristics are well accorded with the result of TCAD simulation.

High Voltage SiC JBS Diodes with Multiple Zone Junction Termination Extension Using Single Etching Step

2014 ◽  
Vol 778-780 ◽  
pp. 808-811
Author(s):  
Xiao Chuan Deng ◽  
Cheng Yuan Rao ◽  
Jin Wei ◽  
Hua Ping Jiang ◽  
Miao Miao Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Parallel Plane ◽  
Simulation Results ◽  
Schottky Rectifier ◽  
Novel Variation

A novel variation of lateral etching junction termination extension (VLE-JTE) for Silicon carbide (SiC) power junction barrier Schottky rectifier (JBS) using a single mask is proposed and investigated. Simulation results shows that the breakdown voltage of JBS terminated with VLE-JTE can achieve 6500V, reaching up to more than 95% of parallel-plane junction bulk breakdown. Moreover, it implements a single mask with window areas varying laterally away from the main junction instead of extra ion implantation or etching steps to achieve multiple-zone JTE, making it easier to be implemented in applications.

Steady-state and transient forward current-voltage characteristics of 4H-silicon carbide 5.5 kV diodes at high and superhigh current densities

1999 ◽  
Vol 46 (11) ◽  
pp. 2188-2194 ◽  
Author(s):  
N.V. Dyakonova ◽  
P.A. Ivanov ◽  
V.A. Kozlov ◽  
M.E. Levinshtein ◽  
J.W. Palmour ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Steady State ◽  
Forward Current ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

High-Current 10 kV SiC JBS Rectifier Performance

2008 ◽  
Vol 600-603 ◽  
pp. 943-946 ◽  
Author(s):  
Eugene A. Imhoff ◽  
Karl D. Hobart
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Reverse Bias ◽  
Reverse Current ◽  
High Current ◽  
Forward Current ◽  
Current Voltage ◽  
Reverse Blocking ◽  
Large Active Area ◽  
Schottky Rectifier

Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented. Over a temperature range of 30 to 200°C, the forward current-voltage curves show a normal Schottky rectifier relationship and the reverse current-voltage curves show typical PiN blocking. When operated in reverse-blocking at 125°C and 8kV, the 10A JBS rectifiers are notably stable at less than 5μA of leakage current, despite the large active area of the devices.

scholarly journals A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2449
Author(s):  
Hongyan Zhao ◽  
Jiangui Chen ◽  
Yan Li ◽  
Fei Lin
Keyword(s):  
Thermal Conductivity ◽  
Breakdown Voltage ◽  
Basic Principle ◽  
Double Pulse ◽  
Experimental Results ◽  
Switching Frequency ◽  
Turn On ◽  
Proof Testing ◽  
Gate Driver ◽  
Drive Circuit

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.

Comparison of Current and Light Induced Defects in a-Si:H

1993 ◽  
Vol 297 ◽  
Author(s):  
R.A. Street ◽  
W.B. Jackson ◽  
M. Hack
Keyword(s):  
Numerical Modelling ◽  
Reverse Bias ◽  
Defect Density ◽  
Reverse Current ◽  
Bias Current ◽  
Spatial Profile ◽  
Forward Current ◽  
Defect Creation ◽  
Induced Defects ◽  
Metastable Defect

Metastable defect creation by illumination and by a forward current in p-i-n devices are compared using CPM and reverse current measurements of the defect density. The data show that the same defects are formed by the two mechanisms, but with different spatial profiles. Numerical modelling shows how the spatial profile influences the reverse bias current.

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

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