Fundamental Aspects Of Polymer Metallization

1998 ◽  
Vol 511 ◽  
Author(s):  
F. Faupel ◽  
T. Strunskus ◽  
M. Kiene ◽  
A. Thran ◽  
C. V. Bechtolsheim ◽  
...  

ABSTRACTValuable information on the structure and formation of metal-polymer interfaces originates from radiotracer measurements of metal diffusion at the interface, structural investigations by means of transmission electron microscopy, and computer simulations on the interplay of atomic metal diffusion and aggregation. Moreover, X-ray photoemission spectroscopy has largely contributed to our present understanding of the interfacial chemistry and the early stages of interface formation. While reactive metals always form relatively sharp interfaces with polymers, metals of lower reactivity diffuse into polymers at elevated temperatures and have a very strong tendency to agglomerate. The extent of diffusion appears to be determined by the initial stage of the deposition process. Here sticking coefficients recently measured for metals on virgin polymer surfaces deviate markedly from unity. Diffusion into the polymer increases strongly at low deposition rates. No significant diffusion is expected from a continuous metal film unless metal ions are formed at the interface. Metal ions are highly mobile and do not aggregate due to electrostatic repulsion. The model emerging from these observations allows us to predict the salient features of interface formation between metals and polymers in general and particularly with respect to the new low-k polymers.

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.


2006 ◽  
Vol 21 (2) ◽  
pp. 202-206 ◽  
Author(s):  
Colin Baillie ◽  
Jamie F. Bickley ◽  
Peter Branton ◽  
James Chadwick ◽  
Peter Wan ◽  
...  

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
M. Winhold ◽  
P. M. Weirich ◽  
C. H. Schwalb ◽  
M. Huth

AbstractFocused electron beam induced deposition presents a promising technique for the fabrication of nanostructures. However, due to the dissociation of mostly organometallic precursor molecules employed for the deposition process, prepared nanostructures contain organic residues leading to rather low conductance of the deposits. Post-growth treatment of the structures by electron irradiation or in reactive atmospheres at elevated temperatures can be applied to purify the samples. Recently, an in-situ conductance optimization process involving evolutionary genetic algorithm techniques has been introduced leading to an increase of conductance by one order of magnitude for tungsten-based deposits using the precursor W(CO)6. This method even allows for the optimization of conductance of nano-structures for which post-growth treatment is not possible or desirable. However, the mechanisms responsible for the observed enhancement have not been studied in depth. In this work, we identified the dwell-time dependent change of conductivity of the samples to be the major contributor to the change of conductance. Specifically, the chemical composition drastically changes with a variation of dwelltime resulting in an increase of the metal content by 15 at% for short dwell-times. The relative change of growth rate amounts to less than 25 % and has a negligible influence on conductance. We anticipate the in-situ genetic algorithm optimization procedure to be of high relevance for new developments regarding binary or ternary systems prepared by focused electron or ion beam induced deposition.


2011 ◽  
Vol 65 (4) ◽  
pp. 363-370 ◽  
Author(s):  
Zoran Markovic ◽  
Davor Perusko ◽  
Dragana Tosic ◽  
Nebojsa Romcevic ◽  
Miroslav Dramicanin ◽  
...  

Single wall carbon nanotubes (SWCNTs) represent an important group of nanomaterials with attractive electrical, chemical, and mechanical properties. In this work we have investigated the structural, optical and electrical properties of single wall carbon nanotube films deposited on copper substrate and then transferred to polymethyl methacrylate (PMMA). The properties of deposited films were varied by changing different parameters: substrate temperature, deposition time and electric field strength. Atomic force microscopy (AFM) has been used to study the deposition process of SWCNT films on copper substrate. AFM analysis has shown that sodium dodecyl sulfate (SDS) micellas were deposited on copper substrate before carbon nanotubes because of their higher mobility. Raman spectroscopy revealed that SWCNTs deposited at elevated temperatures are oxidized. FTIR results showed that COOH groups and Cu2O were generated during electrophoretic process. The SWCNT films were transferred to PMMA substrate and they achieved a sheet resistance of 360 ?/sq with 79% transparency at 550 nm wavelength and a strong adhesion to the substrate. The main reasons for higher values of sheet resistances of SWCNT thin films compared to those of other authors are oxidation of carbon nanotubes during electrophoresis and the presence of used surfactans in carbon matrix of deposited films.


1999 ◽  
Vol 14 (9) ◽  
pp. 3538-3543 ◽  
Author(s):  
C. v. Bechtolsheim ◽  
V. Zaporojtchenko ◽  
F. Faupel

This paper presents the results of a systematic investigation of structure and formation of the interface between gold and trimethylcyclohexane polycarbonate, particularly concerning interface evolvement during gold evaporation and the influence of evaporation rate, substrate temperature, and subsequent annealing. The means of investigation were cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy. Extensive metal diffusion into the polymer and cluster formation near the interface were observed at deposition rates of the order of one monolayer per minute and below. The penetration depth is strongly temperature dependent. At high evaporation rates metal aggregation at the surface prevents cluster formation inside the polymer. No diffusion into the polymer was observed from metal films deposited at room temperature after extensive annealing at elevated temperatures.


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