Influence of Defect Clusters on the Performance of Silicon Solar Cells

1998 ◽  
Vol 510 ◽  
Author(s):  
Bhushan Sopori ◽  
Wei Chen ◽  
Karen Nemire
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Network Modeling ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Defect Clusters ◽  
Si Substrates ◽  
Carrier Recombination ◽  
High Carrier ◽  
Average Defect

AbstractImprovements in the techniques for the growth of Si substrates, used for commercial solar cells, have yielded wafers that exhibit low average defect density × typically less than 105 cm−2. We have observed that low defect density leads to the formation of defect clusters. This defect configuration influences the device performance in a unique way × by primarily degrading the voltage-related parameters. We discuss the nature of the defect clusters and show that they constitute regions of high carrier recombination. Network modeling is used to show that, in a device, these regions act as shunts that dissipate power generated within the cell.

Modeling the Performance of Biaxially-Textured Silicon Solar Cells

2014 ◽  
Vol 1670 ◽  
Author(s):  
Joel B. Li ◽  
Bruce M. Clemens
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Performance Gain ◽  
Carrier Recombination ◽  
Out Of Plane ◽  
Performance Gains ◽  
Tcad Sentaurus

ABSTRACTGrain boundaries (GBs) in polycrystalline silicon (poly-Si) thin film solar cells are frequently found to be detrimental for device performance. Biaxiallytextured silicon with grains that are well-aligned in-plane and out-of-plane can possess fewer GB defects. In this work, we use TCAD Sentaurus device simulator and known experimental work to investigate and quantify the potential performance gains of biaxially-textured silicon. Simulation shows there can be performance gain from well-aligned grains when GB defects dominate carrier recombination or when grains are small. On the other hand, when intra-grain defects dominate recombination and grains are large, well-aligned grains do not lead to much performance gain. Another important result from our simulation is when intra-grain and GB defects are few, Jsc is almost independent of grain size while Voc drops with decreasing grain size.

Attainment of Stable (FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au) Perovskite Solar Cell With Above 23% Photovoltaic Performance Using Solar Capacitance Simulator

2021 ◽  
Author(s):  
Irfan Qasim ◽  
Owais Ahmad ◽  
Asim Rashid ◽  
Tashfeen Zehra ◽  
Muhammad Imran Malik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Buffer Layers ◽  
Electron Transport Layer ◽  
Device Performance ◽  
Highly Efficient

Abstract Solar energy is found to be low cost and abundant of all available energy resources and needs exploration of highly efficient devices for global energy requirements. We have investigated methyl ammonium tin halide (CH3NH3SnI3)-based perovskite solar cells (PSCs) for optimized device performance using solar capacitance simulator SCAPS-1D software. This study is a step forward towards availability of stable and non-toxic solar cells. We explored all necessary parameters such as metal work functions, thickness of absorber and buffer layers, charge carrier’s mobility and defect density for improved device performance. Calculations revealed that for the best efficiency of device the maximum thickness of the perovskite absorber layer must be 4.2 μm. Furthermore, optimized thickness values of (ZnO=0.01 μm) as electron transport layer (ETL), GaAs as hole transport layer (HTL=3.02 μm) and (CdS=10 nm) and buffer layer have provided power conversion efficiency (PCE) of 23.53%. Variation of open circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF%) and quantum efficiency against thickness of all layers in FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au compositions have been critically explored and reported. Interface defects and defect density in different inserted layers have also been reported in this study as they can play a crucial for the device performance. Insertion of ZnO layer and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells.

Electronic Defects and Device Performance in CuGaSe2 Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
J. Jedediah Rembold ◽  
Todd W. Curtis ◽  
Jennifer T. Heath ◽  
David L. Young ◽  
Steve W. Johnston ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Wide Bandgap ◽  
Device Performance ◽  
Defect States ◽  
Materials Properties ◽  
Interface Recombination ◽  
Interface Defect ◽  
Limited Supply ◽  
Electronic Defects

AbstractThe electronic and materials properties of two series of wide-bandgap solar cells with Cu-poor CuGaSe2 (CGS) absorbers have been studied, to better understand limitations on the device performance. One series of samples displayed distinct lateral non-uniformities in Cu/Ga ratio, Na content, and thickness, likely due to a limited supply of Se during CGS growth. The second series of samples appeared uniform. The most prominent electronic difference was the presence of a distinct band of near-interface defect states in the more non-uniform set of samples. The device performance did not appear to be limited by defects in the bulk CGS film until the defect density was larger than 2×1016 cm-3. Instead, interface recombination appears to be a significant factor limiting Voc in both sets of samples.

An Improved Methodology for Extracting the Interface Defect Density of Passivated Silicon Solar Cells

2016 ◽  
Vol 6 (5) ◽  
pp. 1080-1089 ◽  
Author(s):  
Zheng Xin ◽  
Shubham Duttagupta ◽  
Muzhi Tang ◽  
Zixuan Qiu ◽  
Baochen Liao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Silicon Solar Cells ◽  
Interface Defect ◽  
Passivated Silicon

scholarly journals Understanding of Photophysical Processes in DIO Additive-Treated PTB7:PC71BM Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1139
Author(s):  
Xiaojun Su ◽  
Rong Hu ◽  
Guanzhao Wen ◽  
Xianshao Zou ◽  
Mengyao Qing ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Time Scale ◽  
Polymer Solar Cells ◽  
Acid Methyl Ester ◽  
Device Performance ◽  
Operating Voltage ◽  
Exciton Dissociation ◽  
Carrier Recombination ◽  
Dissociation Efficiency

1,8-diiodooctane (DIO) additive is an important method for optimizing the morphology and device performance of polythieno[3,4-b]-thiophene-co-benzodithiophene (PTB7)-based polymer solar cells. However, the effect of DIO additive on charge photogeneration dynamics of PTB7-based polymer solar cells is still poorly understood. In this work, the effect of DIO additive on the carrier photogeneration dynamics, as well as device performance of PTB7: [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) solar cells was studied. Bias-dependent photoluminescence (PL) experiments of a neat PTB7 device show that the exciton cannot be dissociated by the electric field in the device within the operating voltage range, but it can be effectively dissociated by the high electric field. PL and time-resolved PL studies show that DIO additive reduces the phase size of PTB7 in the blend film, resulting in an increased exciton dissociation efficiency. The carrier recombination processes were studied by transient absorption, which shows geminate carrier recombination was suppressed in the DIO-treated PTB7:PC71BM device in ultrafast time scale. The increased exciton dissociation efficiency and suppressed carrier recombination in ultrafast time scale play an important role for DIO-treated PTB7:PC71BM solar cells to attain a higher power conversion efficiency.

Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Boron Doping ◽  
Poor Quality ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Layer Material ◽  
Boron Doped ◽  
Conversion Efficiencies ◽  
Initial Conversion

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.

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