High-eficiency silicon solar cells: Si/SiO2, interface parameters and their impact on device performance

1994 ◽  
Vol 2 (4) ◽  
pp. 265-273 ◽  
Author(s):  
A. G. Aberle ◽  
S. W. Glunz ◽  
A. W. Stephens ◽  
M. A. Green
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Interface Parameters

Modeling the Performance of Biaxially-Textured Silicon Solar Cells

2014 ◽  
Vol 1670 ◽  
Author(s):  
Joel B. Li ◽  
Bruce M. Clemens
Keyword(s):  
Grain Size ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Performance Gain ◽  
Carrier Recombination ◽  
Out Of Plane ◽  
Performance Gains ◽  
Tcad Sentaurus

ABSTRACTGrain boundaries (GBs) in polycrystalline silicon (poly-Si) thin film solar cells are frequently found to be detrimental for device performance. Biaxiallytextured silicon with grains that are well-aligned in-plane and out-of-plane can possess fewer GB defects. In this work, we use TCAD Sentaurus device simulator and known experimental work to investigate and quantify the potential performance gains of biaxially-textured silicon. Simulation shows there can be performance gain from well-aligned grains when GB defects dominate carrier recombination or when grains are small. On the other hand, when intra-grain defects dominate recombination and grains are large, well-aligned grains do not lead to much performance gain. Another important result from our simulation is when intra-grain and GB defects are few, Jsc is almost independent of grain size while Voc drops with decreasing grain size.

Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Boron Doping ◽  
Poor Quality ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Layer Material ◽  
Boron Doped ◽  
Conversion Efficiencies ◽  
Initial Conversion

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.

Influence of Defect Clusters on the Performance of Silicon Solar Cells

1998 ◽  
Vol 510 ◽  
Author(s):  
Bhushan Sopori ◽  
Wei Chen ◽  
Karen Nemire
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Network Modeling ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Defect Clusters ◽  
Si Substrates ◽  
Carrier Recombination ◽  
High Carrier ◽  
Average Defect

AbstractImprovements in the techniques for the growth of Si substrates, used for commercial solar cells, have yielded wafers that exhibit low average defect density × typically less than 105 cm−2. We have observed that low defect density leads to the formation of defect clusters. This defect configuration influences the device performance in a unique way × by primarily degrading the voltage-related parameters. We discuss the nature of the defect clusters and show that they constitute regions of high carrier recombination. Network modeling is used to show that, in a device, these regions act as shunts that dissipate power generated within the cell.

scholarly journals Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells

2012 ◽  
Vol 101 (12) ◽  
pp. 123904 ◽  
Author(s):  
M. Fehr ◽  
P. Simon ◽  
T. Sontheimer ◽  
C. Leendertz ◽  
B. Gorka ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Deep Defects

Nickel Oxide Hole‐Selective Heterocontact for Silicon Solar Cells: Role of SiO x Interlayer on Device Performance

Solar RRL ◽  
2019 ◽  
Vol 3 (11) ◽  
pp. 1900261 ◽  
Author(s):  
Mrutyunjay Nayak ◽  
Sourav Mandal ◽  
Ashutosh Pandey ◽  
Sapna Mudgal ◽  
Sonpal Singh ◽  
...  
Keyword(s):  
Solar Cells ◽  
Nickel Oxide ◽  
Silicon Solar Cells ◽  
Device Performance

Improvement of the ITO-P Interface in a-Si:H Solar Cells Using a Thin SiO Intermediate Layer

1996 ◽  
Vol 420 ◽  
Author(s):  
C. Nunes de carvalho ◽  
J. M. M. De Nijs ◽  
I. Ferreira ◽  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Intermediate Layer ◽  
Early Stage ◽  
Silicon Monoxide ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Ito Thin Films ◽  
Deterioration Process ◽  
Silane Plasma

AbstractThe use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance

Dual-Functional Carbon-Doped Polysilicon Films for Passivating Contact Solar Cells: Regulating Physical Contacts while Promoting Photoelectrical Properties

2021 ◽  
Author(s):  
Yiran Lin ◽  
Zhenhai Yang ◽  
Zunke Liu ◽  
Jingming Zheng ◽  
Mengmeng Feng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Physical Contact ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Crystalline Silicon Solar Cells ◽  
Carbon Doped ◽  
Photoelectrical Properties ◽  
Dual Functional ◽  
Polysilicon Films

Passivating contact crystalline-silicon solar cells are among the most promising industrially feasible photovoltaic (PV) technologies and require an excellent physical contact to handle the device performance. Here, we report a...

Graded Silicon Nanostructure Arrays for Tailoring Antireflection Performances

2013 ◽  
Vol 479-480 ◽  
pp. 105-109
Author(s):  
Cheng Chuan Wang ◽  
Chia Yun Chen ◽  
Ya Ching Chou
Keyword(s):  
Solar Cells ◽  
Low Cost ◽  
Surface Oxidation ◽  
Nanowire Arrays ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Silicon Nanostructure ◽  
High Efficient ◽  
Nanostructure Arrays ◽  
Si Nanostructures

Advances in nanofabrication have resulted in great potentials for improving in both device performance and the manufacturing process of various applications. One revolutionary example is silicon (Si) nanostructures, typically using Si nonopore arrays or Si nonowire arrays, to construct high efficient and low-cost solar cells. In this work, we develop the innovative combined nanostructure arrays with tailored structural profiles using inexpensive, simple and rapid etching processes, whose total reflection is suppressed to 1.6%, approximately 39% less than Si nonopore arrays, and 20% less than Si nanowire arrays. In addition, systematic investigations on wettability of textured Si surfaces reveal the inherent surface oxidation during etching process. These combined nanostructure arrays with tailored antireflection performances, along with the in-depth studies of underlying etching mechanisms, may benefit both the yield and cost efficiently in industrial standard of silicon solar cells.

Improvement of the ITO-p Interface In a-SI:H Solar Cells Using a Thin SiO Intermediate Layer

1996 ◽  
Vol 426 ◽  
Author(s):  
C. Nunes De Carvalho ◽  
J. M. M. De Nijs ◽  
I. Ferreira ◽  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Intermediate Layer ◽  
Early Stage ◽  
Silicon Monoxide ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Ito Thin Films ◽  
Deterioration Process ◽  
Silane Plasma

AbstractThe use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the fTO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The TO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

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