Silicon Carbide Bulk Crystal Growth Modeling from Atomic Scale to Reactor Scale

2013 ◽  
Vol 50 (3) ◽  
pp. 119-126
Author(s):  
S.-i. Nishizawa
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Growth Modeling ◽  
Bulk Crystal ◽  
Atomic Scale ◽  
Bulk Crystal Growth

Defect Formation During Sublimation Bulk Crystal Growth of Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
Noboru Ohtani ◽  
Jun Takahashi ◽  
Masakazu Katsuno ◽  
Hirokatsu Yashiro ◽  
Masatoshi Kanaya
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Defect Formation ◽  
Stacking Faults ◽  
Growth Direction ◽  
Bulk Crystal ◽  
Structural Defects ◽  
Bulk Crystals ◽  
Bulk Crystal Growth ◽  
Sublimation Growth

AbstractThe defect formation during sublimation bulk crystal growth of silicon carbide (SiC) is discussed. SiC bulk crystals are produced by seeded sublimation growth (modified-Lely method), where SiC source powder sublimes and is recrystallized on a slightly cooled seed crystal at uncommonly high temperatures (≥2000°C). The crystals contain structural defects such as micropipes (hollow core dislocations), subgrain boundaries, stacking faults and glide dislocations in the basal plane. The type and density of the defects largely depend on the crystal growth direction, and many aspects are different between the growth parallel and perpendicular to the <0001> c-axis. Micropipes are characteristic defects to the c-axis growth, while a large number of stacking faults are introduced during growth perpendicular to the c-axis. We discuss the cause and mechanism of the defect formation

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

2014 ◽  
Vol 778-780 ◽  
pp. 13-16 ◽  
Author(s):  
Nikolaos Tsavdaris ◽  
Kanaparin Ariyawong ◽  
Odette Chaix-Pluchery ◽  
Jean Marc Dedulle ◽  
Eirini Sarigiannidou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Thermodynamic Analysis ◽  
Bulk Crystal ◽  
Nucleation Theory ◽  
Growth Time ◽  
Crystal Shape ◽  
Bulk Crystal Growth ◽  
Sublimation Method ◽  
Thin Lamella

We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are experimentally obtained and a thermodynamic analysis using classical 2D nucleation theory is used towards the understanding of the experimental results. Whether it is a thin lamella or an inclusion, it is found that the polytype transitions systematically occur on the (0001) facet. This suggests that the polytype switch takes place through classical 2D nucleation at the facet. We will show that two criteria must be fulfilled for the occurrence of a foreign polytype: i) minimization of nucleation energy and ii) presence of a facet. This is directly depending on the crystal shape (convex or concave) and its evolution with growth time.

Preparation of Semi-Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth

2003 ◽  
Vol 433-436 ◽  
pp. 51-54 ◽  
Author(s):  
Matthias Bickermann ◽  
Dieter Hofmann ◽  
Thomas L. Straubinger ◽  
Roland Weingärtner ◽  
Albrecht Winnacker
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Vanadium Doping

Bulk crystal growth of cubic silicon carbide by sublimation epitaxy

2003 ◽  
Vol 249 (1-2) ◽  
pp. 216-221 ◽  
Author(s):  
Tomoaki Furusho ◽  
Makoto Sasaki ◽  
Satoru Ohshima ◽  
Shigehiro Nishino
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Cubic Silicon Carbide

Three-Dimensional Computations of Transport and Growth for Crystal Growth Systems

2000 ◽  
Author(s):  
Jeffrey J. Derby ◽  
Andrew Yeckel
Keyword(s):  
Finite Element ◽  
Crystal Growth ◽  
Finite Element Methods ◽  
Three Dimensional ◽  
Bulk Crystal ◽  
Time Dependent ◽  
Engineering Systems ◽  
Bulk Crystal Growth ◽  
Strongly Nonlinear ◽  
Parallel Supercomputers

Abstract Modern finite element methods implemented on parallel supercomputers promise to allow the study of three-dimensional, time-dependent continuum phenomena in many engineering systems. This paper shows several examples of the fruitful application of these approaches to bulk crystal growth systems, where strongly nonlinear coupled phenomena are important.

Erratum to “Modeling of facet formation in SiC bulk crystal growth” [CRYS 266 (2004) 313]

2004 ◽  
Vol 268 (1-2) ◽  
pp. 328 ◽  
Author(s):  
I.D Matukov ◽  
D.S Kalinin ◽  
M.V Bogdanov ◽  
S.Yu Karpov ◽  
D.Kh Ofengeim ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth ◽  
Facet Formation

Modeling and bulk crystal growth processes: What is to be learned?

2010 ◽  
Author(s):  
Jeffrey J. Derby ◽  
W. Wang ◽  
Katsuo Tsukamoto ◽  
Di Wu
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Growth Processes ◽  
Bulk Crystal Growth
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