Binary And Ternary Amorphous Alloys of Ion-Implanted Fe-Ti-C

1985 ◽  
Vol 51 ◽  
Author(s):  
D. M. Follstaedt ◽  
J. A. Knapp

ABSTRACTThe microstructure of Fe implanted with up to 50 at.% C was found to consist of hexagonal iron carbide precipitates oriented with respect to the Fe matrix. For higher C concentrations, an amorphous phase forms. This concentration dependence is explained in terms of the lattice structure of the iron carbide. In Ti-implanted Fe, substitutional Ti was found in the bcc Fe lattice for concentrations ≤ 15 at.% Ti. The work of others suggests that amorphous phases form for ≥ 33 at.% Ti. These results are discussed in terms of concentration boundaries of the ternary Fe(Ti,C) amorphous phase.Ion beam alloying methods are currently being used to form metastable alloys [1], both for fundamental investigations of such alloys as well as for potential use to improve physical properties of components [2]. An important consideration in metal alloys is what phase will form upon implantation; one aspect of this question is to determine when amorphous phases will form. Rules are currently being advanced to predict alloy systems which will yield amorphous phases. By using ion irradiation and ion beam mixing as well as ion implantation, such rules can be evaluated over entire composition ranges.To gain insight into amorphous phase formation, we have studied Fe alloys implanted with C, Ti and Ti + C. The Fe(C) alloys exhibit compound precipitation and amorphous phase formation; the precipitation and the concentrations at which the amorphous phase appears can be accounted for by considerations of the structure of the hexagonal carbide which forms. Based on conventional uses of the Fe(C) system, such alloys may be useful for improving mechanical properties by implanting C into ferrous components. Iron implanted with Ti is examined to a limited extent here, but by including ion irradiation studies by others [3], a more complete characterization of Fe(Ti) alloys is obtained. The microstructures of Fe(C) and Fe(Ti) are examined along with the known composition limits of amorphous Fe(Ti,C) alloys, which are important for their improved mechanical properties [2]. Taken together, a more complete determination of amorphous phase formation in this ternary system is obtained.

2018 ◽  
Vol 746 ◽  
pp. 77-83 ◽  
Author(s):  
Caixia Wang ◽  
Tao Wang ◽  
Linlin Cao ◽  
Guoqing Wang ◽  
Guojun Zhang

1993 ◽  
Vol 316 ◽  
Author(s):  
J.S. Williams ◽  
H.H. Tan ◽  
R.D. Goldberg ◽  
R.A. Brown ◽  
C. Jagadish

ABSTRACTIon damage processes and amorphous phase formation are compared in Si, GaAs and Alx Ga1-x As materials in the critical regime where dynamic defect annealing is strongly competing with ion damage production. It is shown that the nature of residual damage is very strongly dependent on temperature, ion dose and dose rate in this critical regime for both Si and GaAs and that the amorphous phase can be “nucleated” by high levels of extended defects. In Alx Ga1-x As, the amorphous phase is increasingly more difficult to nucleate with increasing Al concentration at LN2 temperature but can be nucleated at sufficiently high implantation doses for all Al concentrations. No dose rate effect is observed for Alx Ga1-x As. This behaviour is discussed in terms of the availability of mobile defects and bonding configurational changes during irradiation.


1983 ◽  
Vol 27 ◽  
Author(s):  
C.A. Hewett ◽  
I. Suni ◽  
S.S. Lau ◽  
L.S. Hung ◽  
D.M. Scott

ABSTRACTIon implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.


1990 ◽  
Vol 39 (7) ◽  
pp. 101
Author(s):  
LIU WEN-HONG ◽  
ZHU DE-ZHANG ◽  
WANG ZHEN-XIA ◽  
LIU XIANG-HUAI

JOM ◽  
2021 ◽  
Author(s):  
Alexander J. Leide ◽  
Richard I. Todd ◽  
David E. J. Armstrong

AbstractSilicon carbide is desirable for many nuclear applications, making it necessary to understand how it deforms after irradiation. Ion implantation combined with nanoindentation is commonly used to measure radiation-induced changes to mechanical properties; hardness and modulus can be calculated from load–displacement curves, and fracture toughness can be estimated from surface crack lengths. Further insight into indentation deformation and fracture is required to understand the observed changes to mechanical properties caused by irradiation. This paper investigates indentation deformation using high-resolution electron backscatter diffraction (HR-EBSD) and Raman spectroscopy. Significant differences exist after irradiation: fracture is suppressed by swelling-induced compressive residual stresses, and the plastically deformed region extends further from the indentation. During focused ion beam cross-sectioning, indentation cracks grow, and residual stresses are modified. The results clarify the mechanisms responsible for the modification of apparent hardness and apparent indentation toughness values caused by the compressive residual stresses in ion-implanted specimens.


1983 ◽  
Vol 77 (3-4) ◽  
pp. 273-293 ◽  
Author(s):  
J. L. Brimhall ◽  
H. E. Kissinger ◽  
L. A. Charlot

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