A Novel Room Temperature Infrared Detector Using Micro-Compensated Amorphous Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
A. Nascetti ◽  
F. Palma
Keyword(s):  
Amorphous Silicon ◽  
Infrared Radiation ◽  
Room Temperature ◽  
Infrared Detector ◽  
Differential Capacitance ◽  
Absorber Layer ◽  
Structure Capacitance ◽  
Extended States ◽  
Compensation Device ◽  
Device Operation

ABSTRACTDetection at room temperature of near and medium infrared radiation has been achieved by using micro-doped or micro-compensated amorphous silicon films as intermediate absorber layer in a p-n junction. Extremely low dopant concentrations in the gas mixture have been utilized to achieve micro-doping and micro-compensation. Device operation is based on transitions, induced by the infrared radiation, between extended states in the valence band and defects in the forbidden gap. The absorption process changes electron defect occupancy, giving rise to change in electric field distribution. This effect can be observed as variation of differential capacitance of the structure. Capacitance measurements, performed on two different devices with micro-doped and micro-compensated absorber layer respectively, showed sensitivity to radiation from 900 nm up to 4·5 jim.

Near Infrared Response of Amorphous Silicon Detector Grown with Microcompensated Absorber Layer

1999 ◽  
Vol 557 ◽  
Author(s):  
D. Caputo ◽  
G. De Cesare ◽  
A. Nascetti ◽  
F. Palma ◽  
M. Tucci
Keyword(s):  
Amorphous Silicon ◽  
Communication Systems ◽  
Near Infrared ◽  
Silicon Detector ◽  
Optical Excitation ◽  
Absorber Layer ◽  
Trap States ◽  
Low Concentrations ◽  
Dopant Atoms ◽  
Device Operation

AbstractIn this work we demonstrate that radiation up to 2 μm induces photocurrent in a single junction amorphous silicon structure at room temperature. The absorber layer is a microcompensated film deposited using very low concentrations of dopant species. Device operation is based on optical excitation of thermal generated carriers from trap states toward valence and conduction band in the high electric field region of the structure. Transient and frequency response under different bias voltages and illuminations conditions are presented. The possibility to use the infrared sensor in low bit rate communication systems has been demostrated by including our detector in a front-end system and measuring its frequency responce.Quantum efficiency measurement have been reproduced with a numerical model, able to take into account sub-band gap absorption into single films. Model results indicate the presence of a large valence band tail and a high number of dangling bonds and shallow defects ascribed to the presence of dopant atoms.

scholarly journals Room-temperature long-wave infrared detector with thin double layers of amorphous germanium and amorphous silicon

2019 ◽  
Vol 27 (25) ◽  
pp. 37056
Author(s):  
Jiayun Zhou ◽  
Mohammad Abu Raihan Miah ◽  
Yugang Yu ◽  
Alex Ce Zhang ◽  
Zijian Zeng ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Infrared Detector ◽  
Double Layers ◽  
Amorphous Germanium ◽  
Long Wave ◽  
Long Wave Infrared

scholarly journals High-Pressure Spectroscopy Study of Zn(IO3)2 Using Far-Infrared Synchrotron Radiation

Crystals ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 34
Author(s):  
Akun Liang ◽  
Robin Turnbull ◽  
Enrico Bandiello ◽  
Ibraheem Yousef ◽  
Catalin Popescu ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transitions ◽  
Synchrotron Radiation ◽  
Infrared Radiation ◽  
Room Temperature ◽  
Far Infrared ◽  
Low Pressure ◽  
Pressure Response ◽  
Spectroscopy Study ◽  
Far Infrared Radiation

We report the first high-pressure spectroscopy study on Zn(IO3)2 using synchrotron far-infrared radiation. Spectroscopy was conducted up to pressures of 17 GPa at room temperature. Twenty-five phonons were identified below 600 cm−1 for the initial monoclinic low-pressure polymorph of Zn(IO3)2. The pressure response of the modes with wavenumbers above 150 cm−1 has been characterized, with modes exhibiting non-linear responses and frequency discontinuities that have been proposed to be related to the existence of phase transitions. Analysis of the high-pressure spectra acquired on compression indicates that Zn(IO3)2 undergoes subtle phase transitions around 3 and 8 GPa, followed by a more drastic transition around 13 GPa.

scholarly journals Radiation Tolerance in Nano-Structured Crystalline Fe(Cr)/Amorphous SiOC Composite

Crystals ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 147
Author(s):  
Qing Su ◽  
Tianyao Wang ◽  
Lin Shao ◽  
Michael Nastasi
Keyword(s):  
Amorphous Silicon ◽  
Grain Growth ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Silicon Oxycarbide ◽  
Radiation Response ◽  
Radiation Tolerance ◽  
Width Direction ◽  
Cr Film ◽  
Radiation Tolerant

The management of irradiation defects is one of key challenges for structural materials in current and future reactor systems. To develop radiation tolerant alloys for service in extreme irradiation environments, the Fe self-ion radiation response of nanocomposites composed of amorphous silicon oxycarbide (SiOC) and crystalline Fe(Cr) were examined at 10, 20, and 50 displacements per atom damage levels. Grain growth in width direction was observed to increase with increasing irradiation dose in both Fe(Cr) films and Fe(Cr) layers in the nanocomposite after irradiation at room temperature. However, compared to the Fe(Cr) film, the Fe(Cr) layers in the nanocomposite exhibited ~50% less grain growth at the same damage levels, suggesting that interfaces in the nanocomposite were defect sinks. Moreover, the addition of Cr to α-Fe was shown to suppress its grain growth under irradiation for both the composite and non-composite case, consistent with earlier molecular dynamic (MD) modeling studies.

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

1998 ◽  
Vol 227-230 ◽  
pp. 1164-1167 ◽  
Author(s):  
Oleg Gusev ◽  
Mikhail Bresler ◽  
Alexey Kuznetsov ◽  
Vera Kudoyarova ◽  
Petr Pak ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Er Doped ◽  
Hydrogenated Amorphous

The Spectral Dependence of the Non-Radiative Efficiency in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Fan ◽  
J. Kakalios
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Hydrogenated Amorphous Silicon ◽  
Free Carrier ◽  
Radiative Efficiency ◽  
Sharp Minimum ◽  
Carrier Thermalization ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Heat Released

ABSTRACTThe room temperature non-radiative efficiency, defined as the ratio of the heat released per absorbed photon for doped and undoped hydrogenated amorphous silicon (a-Si:H) has been measured using photo-pyroelectric spectroscopy (PPES) for photon energies ranging from 2.5 to 1.6 eV. There is a fairly sharp minimum in the non-radiative efficiency when the a-Si:H is illuminated with near bandgap photons. We describe a model wherein this minimum arises from the variation in the amount of heat generated by free carrier thermalization as the incident photon energy is varied, and report measurements of the excitation kinetics of the non-radiative efficiency which support this proposal.

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

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