Microstructure And Mechanical Properties Of Electroplated Cu Films For Damascene Ulsi Metallization

1997 ◽  
Vol 505 ◽  
Author(s):  
V. M. Dubin ◽  
G. Morales ◽  
C. Ryu ◽  
S. S. Wong
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Standard Deviation ◽  
Aspect Ratio ◽  
High Deposition Rate ◽  
Cu Films ◽  
Copper Electroplating ◽  
Cu Film ◽  
Excellent Adhesion ◽  
Electroplated Copper

ABSTRACTCopper has been deposited for filling sub-0.5 μm trenches by using electroplating. Electroplating with pulse plating conditions provides the high deposition rate (0.5–1 μm/min) and defect-free filling the 0.25 μm trenches and vias of high aspect ratio (>4:1). Enhanced copper electroplating at the trench bottom has been achieved. The median grain size of electroplated copper was measured to be about 1 jim and the lognormal standard deviation is about 0.4 μm. Strong <111> texture was observed in electroplated Cu film. Low stress of electroplated Cu films and excellent adhesion of plated Cu to sputtered Cu seed were observed.

Mechanical Properties of Electroplated Copper Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
R. Spolenak ◽  
C. A. Volkert ◽  
K. Takahashi ◽  
S. Fiorillo ◽  
J. Miner ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Film Thickness ◽  
Yield Stress ◽  
Laser Scanning ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Cu Films ◽  
Electroplated Copper

AbstractIt is well known that the mechanical properties of thin films depend critically on film thickness However, the contributions from film thickness and grain size are difficult to separate, because they typically scale with each other. In one study by Venkatraman and Bravman, Al films, which were thinned using anodic oxidation to reduce film thickness without changing grain size, showed a clear increase in yield stress with decreasing film thickness.We have performed a similar study on both electroplated and sputtered Cu films by using chemical-mechanical polishing (CMP) to reduce the film thickness without changing the grain size. Stress-temperature curves were measured for both the electroplated and sputtered Cu films with thicknesses between 0.1 and 1.8 microns using a laser scanning wafer curvature technique. The yield stress at room temperature was found to increase with decreasing film thickness for both sets of samples. The sputtered films, however, showed higher yield stresses in comparison to the electroplated films. Most of these differences can be attributed to the different microstructures of the films, which were determined by focused ion beam (FIB) microscopy and x-ray diffraction.

Copper Electroplating for Damascene ULSI Interconnects

1998 ◽  
Vol 514 ◽  
Author(s):  
V. M. Dubin ◽  
S. Lopatin ◽  
S. Chen ◽  
R. Cheung ◽  
C. Ryu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aspect Ratio ◽  
Tensile Stress ◽  
High Aspect Ratio ◽  
Seed Layer ◽  
Cu Films ◽  
Step Coverage ◽  
Copper Electroplating ◽  
Electroplated Copper ◽  
Bottom Step

ABSTRACTCopper was electroplated on sputtered Cu seed layer with Ta diffusion barrier. We achieved enhanced Cu deposition at the bottom of trenches/vias and defect-free filling sub-0.5 μm trenches (down to 0.25 μm width) of high aspect ratio (up to 4:1). Large grains occupying the entire trench were observed. Bottom step coverage of electroplated copper in sub-0.5 μm trenches was estimated to be about 140%, while sidewalls step coverage was about 120%. Via resistance for sub-0.5 μm vias was measured to be below 0.55 Ω. Strong <111> texture, large grains, and low tensile stress were observed in electroplated Cu films and in-laid Cu lines after low temperature anneal.

Influence of Film Thickness and Capping Layer on the Mechanical Properties of Copper Films

1995 ◽  
Vol 391 ◽  
Author(s):  
R.-M. Keller ◽  
W.-M. Kuschke ◽  
A. Kretschmann ◽  
S. Bader ◽  
R.P. Vinci ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Dislocation Density ◽  
Film Thickness ◽  
Copper Films ◽  
Peak Width ◽  
Capping Layer ◽  
X Ray ◽  
Cu Films ◽  
Cu Film

AbstractSubstrate curvature and X-ray technique were used to study the mechanical properties of Cu films. Stress-temperature curves were measured using both methods. An additional analysis of the X-ray peak width allows us to estimate grain size and dislocation density as a function of temperature. It can be shown that a capping layer changes the mechanical properties of a Cu film strongly and that in capped films dislocation processes seem to be more important than diffusion at high temperatures.

scholarly journals The Compound Influence of Texture and Microstructure on the Mechanical Properties of Low-C Steel Wires

1991 ◽  
Vol 13 (4) ◽  
pp. 243-260 ◽  
Author(s):  
P. Gangli ◽  
J. A. Szpunar ◽  
Sugondo
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Aspect Ratio ◽  
Yield Strength ◽  
Strain Energy ◽  
Size Parameter ◽  
Wire Axis ◽  
Steel Wires ◽  
The Mean ◽  
Homogeneous Strain

A series of experiments were made determining textural, microstructural, and mechanical properties in cold drawn, and spheroidization heat treated low-C steel wires (AISI-1018 and 1033 grades). It was found that texture exerted a significant influence on the mechanical properties, while microstructure had a comparable influence.Mechanical properties are represented by yield strength (YS), ultimate compressive strength (UCS) and by homogeneous strain energy (EHOM), defined by the integral of stress up to uniform elongation. Textural properties are represented by the Taylor-factor, M, the R-value, and by the maximum of the orientation distribution function (ODFMAX). Micro-structural properties are treated with the help of the aspect ratio parameter (1/√AR), where AR is the grain aspect ratio (length to ellipsoidal width), the grain size parameter (1/√D), and the mean free path between second phase spheroidized cementites √N.For cold drawn steel wires, homogeneous strain energy (EHOM) is well correlated to (1/√AR) and (ODFMAX). Yield strength, on the other hand, appears to be chiefly influenced by the aspect ratio parameter, thus here ODFMAX exerts less influence. The yield strength (YS) of annealed, spheroidization treated low-C wires are equally influenced by the grain size parameter (1/√D), the mean distance between spherulites (√N) and by ODFMAX.The textures of the cold drawn wires could be well described by the 〈110〉 fibre parallel to wire axis, and by the 〈111〉 fibre normal to wire axis. The annealed wires, while also featuring these two fibres, displayed a distinct {111}〈110〉single orientation.

Effect of Plating Condition on the Mechanical Properties and Residual Stress of Electroplated Copper Film

2007 ◽  
Vol 26-28 ◽  
pp. 637-640 ◽  
Author(s):  
Yoo Min Ahn ◽  
Yong Jun Ko ◽  
Hyun Joon Kim ◽  
Dong Ho Lee ◽  
Su Kei Lee ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Silicon Oxide ◽  
Copper Film ◽  
Organic Additives ◽  
Electro Deposition ◽  
Cu Film ◽  
Plating Solution ◽  
Electroplated Copper ◽  
Copper Structure

This paper discusses the effect of plating condition on the mechanical properties and residual stress of electroplated Cu film. The inlaid copper structure was fabricated on silicon wafer where silicon oxide was thermally grown. Seed layer was deposited by sputtering method followed by copper electro-deposition. Copper was electrodeposited with IBM paddle type electroplating machine Residual stress, hardness, elastic modulus, and surface roughness of electroplated copper film were investigated at various organic additives in plating solution and current types with a nanoindenter and a surface profilometer. The dishing amounts in chemical mechanical polishing (CMP) was also investigated at various additives. The results show that, in the case of residual stress, the copper film deposited at higher additive or PC current result in lower residual stress. The additives do not significantly affect the mechanical properties of Cu deposit.

RESIDUAL STRESS DEVELOPMENT IN CU THIN FILMS WITH AND WITHOUT AlN PASSIVATION BY CYCLIC PLANE BENDING

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2530-2536
Author(s):  
MITSUHIKO SHINOHARA ◽  
TAKAO HANABUSA ◽  
KAZUYA KUSAKA
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Diffraction Method ◽  
Micro Electro Mechanical System ◽  
Passivation Layer ◽  
X Ray Diffraction ◽  
Cu Films ◽  
Cu Film ◽  
Bending Fatigue Test ◽  
Plane Bending

Since the thin film technology is applied to micro-machines, MEMS (micro electro-mechanical system), optical devices and others, the evaluation of mechanical properties in thin films becomes to be important. On the other hand, there are differences in mechanical properties between bulk materials and thin films, but studies in this field have not yet been made enough. The present paper reports on the evaluation of the mechanical properties of Cu thin films with and without AlN passivation layer. Specimens with different thickness of Cu film were subjected to cyclic plane bending fatigue test. Residual stresses developed in the Cu films were measured in a sequence of bending cycles using X-ray diffraction method in order to understand the effect of film thickness and passivation layer on mechanical properties of Cu thin films.

Thickness and grain size dependent mechanical properties of Cu films studied by nanoindentation tests

2009 ◽  
Vol 42 (6) ◽  
pp. 065405 ◽  
Author(s):  
Z H Cao ◽  
P Y Li ◽  
H M Lu ◽  
Y L Huang ◽  
X K Meng
Keyword(s):  
Mechanical Properties ◽  
Grain Size ◽  
Cu Films ◽  
Size Dependent

scholarly journals Effect of Annealing on Microstructure and Mechanical Properties of Magnetron Sputtered Cu Thin Films

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Shiwen Du ◽  
Yongtang Li
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Residual Stress ◽  
Grain Size ◽  
Strain Energy ◽  
Texture Coefficient ◽  
Elastic Strain Energy ◽  
Interface Energy ◽  
Cu Films ◽  
Si Substrates

Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Microstructure evolution and mechanical properties of Cu thin films with different annealing temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and nanoindentation. The surface morphology, roughness, and grain size of the Cu films were characterized by AFM. The minimization of energy including surface energy, interface energy, and strain energy (elastic strain energy and plastic strain energy) controlled the microstructural evolution. A classical Hall-Petch relationship was exhibited between the yield stress and grain size. The residual stress depended on crystal orientation. The residual stress as-deposited was of tension and decreased with decreasing of (111) orientation. The ratio of texture coefficient of (111)/(220) can be used as a merit for the state of residual stress.

AN INVESTIGATION OF SMOOTH NANOSIZED COPPER FILMS ON GLASS SUBSTRATE BY IMPROVED ELECTROLESS PLATING

2006 ◽  
Vol 13 (04) ◽  
pp. 471-478 ◽  
Author(s):  
HUIPING ZHANG ◽  
ZHONGHAO JIANG ◽  
XIANLI LIU ◽  
JIANSHE LIAN
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Electroless Plating ◽  
Glass Substrate ◽  
Deposition Time ◽  
Copper Films ◽  
Diffraction Intensity ◽  
Cu Films ◽  
Fine Grain ◽  
Cu Film

Thin nanocrystalline Cu films (< 1 μm) are deposited on a glass substrate using an improved electroless plating technique. The deposition course of the Cu film is illustrated by the variation of surface morphology with different deposition time. The results show that a more uniform and continuous nanocrystalline Cu film with very small nodules can be formed on a glass substrate at the deposition time over 1 min. The roles of SDBS as an additive in the bath are also discussed. According to the relation of the film thickness and the deposition time, it is obvious that the film thickness nearly linearly varies with the deposition time in the present work. An enhanced (111) texture with the diffraction intensity ratio (I(111)/I(200)) of about 4.0 and the very fine grain size of 15–28 nm determined by X-ray results has been observed. The variations of the resistivity show that it is strongly affected by the film thickness and grain size.

Impact of Low-Temperature Anneals of Electroplated Copper Films on Copper CMP Removal Rates

1999 ◽  
Vol 566 ◽  
Author(s):  
Konstantin Smekalin ◽  
Qing-Tang Jiang
Keyword(s):  
Room Temperature ◽  
Rate Increase ◽  
Removal Rate ◽  
Inert Gas ◽  
Copper Films ◽  
Cu Films ◽  
Film Hardness ◽  
Cu Film ◽  
Electroplated Copper ◽  
Over Time

CMP removal rate (RR) of electrodeposited Cu film was found to increase by 35% over time after plating. The RR increase was attributed to Cu film hardness reduction of 43% and grain growth from the initial 0.1urn at as-deposit to lum at the final stage at room temperature. The removal rate increase will translate to variations in manufacturing environment and are therefore unacceptable. It was found that annealing at ∼100C for 5 minutes in inert gas will stabilize Cu films and provide consistent CMP removal rate.

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