In Situ Monitoring of Anodic Oxide Growth on SI (001) by Interface Second-Harmonic Generation
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ABSTRACTOptical second-harmonic (SH) generation is used to monitor the anodic growth of oxide on a (001) Si surface. The measured SH intensity is dominated by the nonlinear optical response of the space charge region in the Si just below the Si/oxide interface. The interface SH technique can detect the onset of H desorption, identify the flat band potential, and probe the evolution of space charge within the growing oxide layer.
2000 ◽
Vol 29
(6)
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pp. 648-653
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1990 ◽
1984 ◽
Vol 131
(10)
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pp. 2289-2294
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Keyword(s):
1990 ◽