Electrical Properties of Novel Anodic Films Formed in Nonaqueous Electrolyte Solutions

1997 ◽  
Vol 500 ◽  
Author(s):  
F. Mizutani ◽  
S. Takeuchi ◽  
T. Nishiwaki ◽  
N. Sato ◽  
M. Ue
Keyword(s):  
Electrical Properties ◽  
Thin Film Transistor ◽  
Electrolyte Solutions ◽  
Liquid Crystal Displays ◽  
Gate Insulator ◽  
Anodic Films ◽  
Nonaqueous Solutions ◽  
Nonaqueous Electrolyte ◽  
Metal Insulator Metal ◽  
Nonaqueous Electrolyte Solutions

ABSTRACTAn aluminum alloy (Al - 1.0% Si - 0.5% Cu) was anodized in nonaqueous electrolyte solutions containing propylene carbonate (PC), ethylene glycol (EG), or γ-butyrolactone (GBL) as a solvent. MIM (metal-insulator-metal) elements using these anodic films were made to evaluate their electrical properties. Leakage current of the anodic films formed in the nonaqueous solutions was lower than those formed in aqueous electrolyte solutions. These novel films are useful as a high insulating film used for a gate insulator in thin film transistor liquid crystal displays (TFT-LCD).

Plasma Deposited Oxynitride Films: Structural and Electrical Characterization

1992 ◽  
Vol 284 ◽  
Author(s):  
S. Scaglione ◽  
L. Mariucci ◽  
A. Mattacchini ◽  
A. Pecora ◽  
G. Fortunato
Keyword(s):  
Electrical Properties ◽  
Thin Film Transistor ◽  
Electrical Characterization ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Metal Insulator ◽  
Metal Structures ◽  
Local Bonding ◽  
Metal Insulator Metal ◽  
Structural And Electrical Properties

ABSTRACTIn the present work structural and electrical properties of thin films, deposited by PECVD from He-diluted S1H4+NH3+N2O gas mixtures, have been studied. Film compositions have been analyzed by NRA, RBS and hydrogen content has been determinated by ERDA while Infrared spectroscopy has been used to evaluate the local bonding configurations. Electrical properties have been measured in metal-insulator-metal structures by I-V ramp. From the results obtained, the oxynitride films show suitable properties for application as gate insulator in amorphous silicon thin film transistor.

New handy relationship between the conductivity of concentrated nonaqueous electrolyte solutions and the dielectric constant and viscosity of the solvents

2002 ◽  
Vol 107 (1) ◽  
pp. 80-89 ◽  
Author(s):  
Guillaume Herlem ◽  
Pierre Tran-Van ◽  
Pascal Marque ◽  
Sébastien Fantini ◽  
Jean-François Penneau ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electrolyte Solutions ◽  
Nonaqueous Electrolyte ◽  
Nonaqueous Electrolyte Solutions
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