Grain Boundary Passivation and Analysis for Solar Cell Applications
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ABSTRACTGrain boundaries in Wacker poly-Si are shown to contribute mid-gap interface states, a greater frequency dependence in a.c. conductance, and lesser frequency dependence in capacitance. H-passivation was shown to be effective in reducing grain boundary effects as evidenced by 4-point probe resistance and IR studies.
1988 ◽
Vol 3
(4)
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pp. 605-609
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2006 ◽
Vol 26
(14)
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pp. 2855-2859
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1990 ◽
Vol 51
(C1)
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pp. C1-1035-C1-1042
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2008 ◽
Vol 53
(7)
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pp. 1025-1099
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