Grain Boundary Shunt Currents Across a pn Junction

1981 ◽  
Vol 5 ◽  
Author(s):  
S. Roy Morrison
Keyword(s):  
Solar Cell ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Pn Junction

ABSTRACTThe effect on the diode characteristics when a conducting grain boundary intersects a pn junction is analyzed. The possibilities of conducting grain boundaries are related to the levels associated with precipitates at the grain boundary. The effect of the grain boundary on the diode characteristics is found particularly degrading when donor impurities precipitate in the n region while simultaneously acceptor impurities precipitate in the p region. Both solar cell characteristics and the dark diode characteristics are analyzed.

Self-assembled propylammonium cations at grain boundaries and the film surface to improve the efficiency and stability of perovskite solar cells

2019 ◽  
Vol 7 (41) ◽  
pp. 23739-23746 ◽  
Author(s):  
Chengbin Fei ◽  
Meng Zhou ◽  
Jonathan Ogle ◽  
Detlef-M. Smilgies ◽  
Luisa Whittaker-Brooks ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Perovskite Solar Cells ◽  
Film Surface ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Large Size ◽  
Moisture Stability

Large size cation (PA) was introduced into the grain boundary and film surface of the 3D perovskite to improve the solar cell efficiency and moisture stability.

A deconvoluted PL approach to probe the charge carrier dynamics of the grain interior and grain boundary of a perovskite film for perovskite solar cell applications

2017 ◽  
Vol 19 (13) ◽  
pp. 9143-9148 ◽  
Author(s):  
Abdullah Al Mamun ◽  
Tanzila Tasnim Ava ◽  
Hyeon Jun Jeong ◽  
Mun Seok Jeong ◽  
Gon Namkoong
Keyword(s):  
Solar Cell ◽  
Grain Boundary ◽  
Charge Carrier ◽  
Grain Boundaries ◽  
Perovskite Solar Cell ◽  
Carrier Dynamics ◽  
Charge Carrier Dynamics ◽  
Pl Mapping

2D photoluminescence (PL) mapping revealed the blueshift of PL at grain boundaries while relatively very uniform but longer wavelengths were observed at grain interiors.

Grain Boundary Passivation and Analysis for Solar Cell Applications

1981 ◽  
Vol 5 ◽  
Author(s):  
V. J. Rao ◽  
W. A. Anderson ◽  
F. Kai
Keyword(s):  
Solar Cell ◽  
Grain Boundary ◽  
Frequency Dependence ◽  
Grain Boundaries ◽  
Interface States ◽  
Boundary Effects ◽  
Ir Studies ◽  
Grain Boundary Effects

ABSTRACTGrain boundaries in Wacker poly-Si are shown to contribute mid-gap interface states, a greater frequency dependence in a.c. conductance, and lesser frequency dependence in capacitance. H-passivation was shown to be effective in reducing grain boundary effects as evidenced by 4-point probe resistance and IR studies.

Measurement of the Displacement Across a Coincidence Grain Boundary

1977 ◽  
Vol 35 ◽  
pp. 124-125
Author(s):  
J. W. Matthews ◽  
W. M. Stobbs
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Stacking Fault ◽  
The Other ◽  
Measuring Technique ◽  
High Angle ◽  
Twin Boundaries ◽  
Rigid Displacement ◽  
Cubic Crystals ◽  
Lattice Displacement

Many high-angle grain boundaries in cubic crystals are thought to be either coincidence boundaries (1) or coincidence boundaries to which grain boundary dislocations have been added (1,2). Calculations of the arrangement of atoms inside coincidence boundaries suggest that the coincidence lattice will usually not be continuous across a coincidence boundary (3). There will usually be a rigid displacement of the lattice on one side of the boundary relative to that on the other. This displacement gives rise to a stacking fault in the coincidence lattice.Recently, Pond (4) and Smith (5) have measured the lattice displacement at coincidence boundaries in aluminum. We have developed (6) an alternative to the measuring technique used by them, and have used it to find two of the three components of the displacement at {112} lateral twin boundaries in gold. This paper describes our method and presents a brief account of the results we have obtained.

Observations of dislocation interactions with recrystallized grain boundaries

1988 ◽  
Vol 46 ◽  
pp. 628-629
Author(s):  
C. W. Price
Keyword(s):  
Dislocation Density ◽  
Grain Boundary ◽  
Strain Rate ◽  
Grain Boundaries ◽  
Dislocation Structure ◽  
Hot Deformation ◽  
Static Recrystallization ◽  
High Dislocation Density ◽  
High Angle ◽  
Dislocation Interactions

Little evidence exists on the interaction of individual dislocations with recrystallized grain boundaries, primarily because of the severely overlapping contrast of the high dislocation density usually present during recrystallization. Interesting evidence of such interaction, Fig. 1, was discovered during examination of some old work on the hot deformation of Al-4.64 Cu. The specimen was deformed in a programmable thermomechanical instrument at 527 C and a strain rate of 25 cm/cm/s to a strain of 0.7. Static recrystallization occurred during a post anneal of 23 s also at 527 C. The figure shows evidence of dissociation of a subboundary at an intersection with a recrystallized high-angle grain boundary. At least one set of dislocations appears to be out of contrast in Fig. 1, and a grainboundary precipitate also is visible. Unfortunately, only subgrain sizes were of interest at the time the micrograph was recorded, and no attempt was made to analyze the dislocation structure.

Measurement of solute segregation to grain boundaries in the AEM: A review

1988 ◽  
Vol 46 ◽  
pp. 606-607
Author(s):  
D. B. Williams ◽  
A. D. Romig
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Boundary Misorientation ◽  
Collector Plate ◽  
Segregation Process ◽  
Grain Boundary Misorientation ◽  
Structure Boundary ◽  
Equilibrium Segregation

The segregation of solute or imparity elements to grain boundaries can occur by three well-defined processes. The first is Gibbsian segregation in which an element of minimal matrix solubility confines itself to a monolayer at the grain boundary. Classical examples include Bi in Cu and S or P in Fe. The second process involves the depletion of excess matrix solute by volume diffusion to the boundary. In the boundary, the solute atoms diffuse rapidly to precipitates, causing them to grow by the ‘collector-plate mechanism.’ Such grain boundary diffusion is thought to initiate “Diffusion-Induced Grain Boundary Migration,” (DIGM). This process has been proposed as the origin of eutectoid transformations or discontinuous grain boundary reactions. The third segregation process is non-equilibrium segregation which result in a solute build-up around the boundary because of solute-vacancy interactions.All of these segregation phenomena usually occur on a sub-micron scale and are often affected by the nature of the grain boundary (misorientation, defect structure, boundary plane).

Grain boundary segregation in metals

1992 ◽  
Vol 50 (2) ◽  
pp. 1204-1205
Author(s):  
C.L. Briant
Keyword(s):  
Fracture Surface ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Material Properties ◽  
Electron Spectroscopy ◽  
High Vacuum ◽  
Boundary Segregation ◽  
Grain Boundary Segregation ◽  
Local Concentration ◽  
The One

Grain boundary segregation is the process by which solute elements in a material diffuse to the grain boundaries, become trapped there, and increase their local concentration at the boundary over that in the bulk. As a result of this process this local concentration of the segregant at the grain boundary can be many orders of magnitude greater than the bulk concentration of the segregant. The importance of this problem lies in the fact that grain boundary segregation can affect many material properties such as fracture, corrosion, and grain growth.One of the best ways to study grain boundary segregation is with Auger electron spectroscopy. This spectroscopy is an extremely surface sensitive technique. When it is used to study grain boundary segregation the sample must first be fractured intergranularly in the high vacuum spectrometer. This fracture surface is then the one that is analyzed. The development of scanning Auger spectrometers have allowed researchers to first image the fracture surface that is created and then to perform analyses on individual grain boundaries.

Freeze-fracture TEM of the helical smectic A* phase

1992 ◽  
Vol 50 (1) ◽  
pp. 278-279
Author(s):  
K.J. Ihn ◽  
R. Pindak ◽  
J. A. N. Zasadzinski
Keyword(s):  
Liquid Crystal ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Freeze Fracture ◽  
Smectic Phase ◽  
Layer Spacing ◽  
Screw Dislocations ◽  
Smectic A ◽  
Smectic Phases ◽  
Discrete Amount

A new liquid crystal (called the smectic-A* phase) that combines cholesteric twist and smectic layering was a surprise as smectic phases preclude twist distortions. However, the twist grain boundary (TGB) model of Renn and Lubensky predicted a defect-mediated smectic phase that incorporates cholesteric twist by a lattice of screw dislocations. The TGB model for the liquid crystal analog of the Abrikosov phase of superconductors consists of regularly spaced grain boundaries of screw dislocations, parallel to each other within the grain boundary, but rotated by a fixed angle with respect to adjacent grain boundaries. The dislocations divide the layers into blocks which rotate by a discrete amount, Δθ, given by the ratio of the layer spacing, d, to the distance between grain boundaries, lb; Δθ ≈ d/lb (Fig. 1).

Morphology and atomic structure of segregated grain boundaries in Cu-Sb

1992 ◽  
Vol 50 (1) ◽  
pp. 254-255
Author(s):  
R. W. Fonda ◽  
D. E. Luzzi
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Intergranular Fracture ◽  
Atomic Structure ◽  
Copper Alloys ◽  
Polycrystalline Materials ◽  
Grain Boundary Embrittlement ◽  
Boundary Embrittlement

The properties of polycrystalline materials are strongly dependant upon the strength of internal boundaries. Segregation of solute to the grain boundaries can adversely affect this strength. In copper alloys, segregation of either bismuth or antimony to the grain boundary will embrittle the alloy by facilitating intergranular fracture. Very small quantities of bismuth in copper have long been known to cause severe grain boundary embrittlement of the alloy. The effect of antimony is much less pronounced and is observed primarily at lower temperatures. Even though moderate amounts of antimony are fully soluble in copper, concentrations down to 0.14% can cause grain boundary embrittlement.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

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