Precursors for the Chemical Vator Deposition of Titanium Nitride and Titanium Aluminum Nitride Films

ABSTRACTTitanium nitride and ternary alloys thereof are of significant interest due to their hardness, chemical resistance, and good electrical conductivity. We report the synthesis, structure, and properties of several new precursors to titanium nitride that are based upon hydrazine-derived ligands. Application of these complexes in titanium nitride film depositions is overviewed. Film properties and characterization are presented. We also describe a new process for the preparation of titanium aluminum nitride films, and focus on how the presence of small amounts of aluminum change the properties of the material.