Room Temperature Magnetoresistance in LaxCaYMnO3 Thin-Films Deposited by Liquid Delivery Chemical Vapor Deposition

1997 ◽  
Vol 495 ◽  
Author(s):  
D. Studebaker ◽  
M. Todd ◽  
G. Doubinina ◽  
C. Seegal ◽  
T. H. Baum
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Crystalline Films ◽  
Commercial Applications ◽  
A Site ◽  
Liquid Delivery

ABSTRACTLiquid delivery, metal-organic chemical vapor deposition (MOCVD) was used to deposit high quality, A-site deficient crystalline films of LaxCayMnO3 where x + y < 1. The properties of the deposited thin-films are strongly dependent upon the film stoichiometry and display magnetoresistance repsonses at or above room temperature. Using Ca doped A-site deficient thin-films, we can shift the metal to insulator transition (Te) in a controlled manner to temperatures that are useful for commercial applications. Further, these films exhibit useful magnetoresistance at room temperature in relatively small applied magnetic fields.

Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Planar Silicon ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

scholarly journals Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition

2015 ◽  
Vol 64 (4) ◽  
pp. 047202
Author(s):  
Wang Bao-Zhu ◽  
Zhang Xiu-Qing ◽  
Zhang Ao-Di ◽  
Zhou Xiao-Ran ◽  
Bahadir Kucukgok ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Thermoelectric Properties ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Growth of (Ni,Zn)Fe2O4 Thin Films by Liquid Delivery Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Gangaware ◽  
R. Woolcott ◽  
A. I. Kingon ◽  
J. F. Roeder ◽  
T. H. Baum
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Chemical Vapor Deposition ◽  
Saturation Magnetization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Liquid Delivery

AbstractNi,Zn-ferrite (NZF) thin films are of interest for high frequency applications because of their high saturation magnetization compared to garnet films and their low eddy current losses compared to metal alloy films. Therefore there is an increasing need for methods to deposit single crystal ferrite thin films for incorporation into next generation microwave devices.Epitaxial thin films of NZF have been deposited by liquid delivery metal-organic chemical vapor deposition onto (100) oriented MgO substrates. The morphology, orientation and magnetic properties of the as-deposited films were investigated as a function of deposition temperature and pressure. X-ray diffraction (XRD) reveals highly oriented films with a film strain of 1.01% compared to bulk lattice parameters. Films with well saturated magnetic hysteresis were obtained under a number of conditions with values of saturation magnetization up to 270 emu/cc (3400 gauss) with relatively low coercive fields ~100 Oe. The influence of metal cation ratio on magnetic properties is discussed.

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