Imprint Characteristics Of SrBi 2 Ta 2 O 9 Thin Films Deposited by Liquid-Delivery Metal Organic Chemical Vapor Deposition

2002 ◽  
Vol 271 (1) ◽  
pp. 341-346 ◽  
Author(s):  
Woong-Chul Shin ◽  
Nak-Jin Seong ◽  
Kyu-Jeong Choi ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Liquid Delivery

Growth of (Ni,Zn)Fe2O4 Thin Films by Liquid Delivery Metal-Organic Chemical Vapor Deposition

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Gangaware ◽  
R. Woolcott ◽  
A. I. Kingon ◽  
J. F. Roeder ◽  
T. H. Baum
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Chemical Vapor Deposition ◽  
Saturation Magnetization ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Liquid Delivery

AbstractNi,Zn-ferrite (NZF) thin films are of interest for high frequency applications because of their high saturation magnetization compared to garnet films and their low eddy current losses compared to metal alloy films. Therefore there is an increasing need for methods to deposit single crystal ferrite thin films for incorporation into next generation microwave devices.Epitaxial thin films of NZF have been deposited by liquid delivery metal-organic chemical vapor deposition onto (100) oriented MgO substrates. The morphology, orientation and magnetic properties of the as-deposited films were investigated as a function of deposition temperature and pressure. X-ray diffraction (XRD) reveals highly oriented films with a film strain of 1.01% compared to bulk lattice parameters. Films with well saturated magnetic hysteresis were obtained under a number of conditions with values of saturation magnetization up to 270 emu/cc (3400 gauss) with relatively low coercive fields ~100 Oe. The influence of metal cation ratio on magnetic properties is discussed.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 5A) ◽  
pp. 2839-2842 ◽  
Author(s):  
Jeong Hoon Park ◽  
Kug Sun Hong ◽  
Woon Jo Cho ◽  
Jang-Hoon Chung
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

1994 ◽  
Vol 9 (7) ◽  
pp. 1721-1727 ◽  
Author(s):  
Jie Si ◽  
Seshu B. Desu ◽  
Ching-Yi Tsai
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Organic Chemical ◽  
Deposition Rates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

Sign in / Sign up

Export Citation Format

Share Document