Synthesis and photoresponse of rare earth doped phosphosilicates

1997 ◽  
Vol 495 ◽  
Author(s):  
Z. Cao ◽  
B. I. Lee ◽  
W. D. Samuels ◽  
G. J. Exarhos ◽  
L. Wang

ABSTRACTPhosphate ceramics doped with Sm3+ and Tb3+ ions were synthesized through sol-gel process. Thin films of Tb3+ doped phosphosilicates were fabricated by spin coating of the phosphosilicate sols on SiOx/indium-tin-oxide/glass substrates. The gels synthesized by reaction of P2O5 with tetraethoxy silane (TEOS) were fired in air at a temperature range of 200°C – 900°C. The crystal structure was examined by x-ray diffractometry. Si5O(PO4)6 was the only crystalline phase. The fluorescence spectra of Sm3+ as a function of firing temperature, composition and structure of the matrices were investigated. The intensity of Sm3+ emission increased with increasing firing temperatures and greater proportion of phosphorus. The photocurrent of the films at 355 nm laser excitation was observed. The photoresponse as a function of laser energy was linear and showed no sign of saturation. The films exhibited stable photoresponse under a high number of laser shots.

2007 ◽  
Vol 55 (12) ◽  
pp. 153-160 ◽  
Author(s):  
Y. Pooarporn ◽  
A. Worayingyong ◽  
M. Wörner ◽  
P. Songsiriritthigul ◽  
A.M. Braun

Doped and undoped titanium dioxide films have been deposited on indium tin oxide glass using the sol-gel technique. The percentage of rutile in the prepared TiO2, calcined at 823 K and determined by X-ray diffraction, was 23% compared to 24% of rutile in P25-TiO2. Cerium doped TiO2 showed mainly the anatase phase, as characterised by both X-ray diffraction and Raman spectroscopy. The electrochemical and photoelectrochemical properties of the films were studied by cyclic voltammetry and electrochemical impedance spectroscopy. The (photo)electrochemical characteristics of the different films are reported and discussed.


2012 ◽  
Vol 486 ◽  
pp. 417-421 ◽  
Author(s):  
Xiao Yan Zhang ◽  
Xi Wei Qi ◽  
Jian Quan Qi ◽  
Xuan Wang

Multiferroic La-doped Bi1-xLaxFeO3 thin films were prepared on conductive indium tin oxide (ITO)/glass substrates through a simple sol-gel process. The crystal structure of La-doped Bi1-xLaxFeO3 thin films annealed at different temperature was determined to be rhombohedral of R3m space and free of secondary phases. The grain size of La-doped BiFeO3 thin films tends to become larger and the grain boundary is gradually ambiguous compared to pure BiFeO3. The double remanent polarization 2Pr of Bi0.9La0.1FeO3 thin film annealed at 500°C is 6.66 µC/cm2, which is slightly improved than that of pure BiFeO3 thin film. With the increase of La-doping levels, the dielectric constant is increased and the dielectric loss is obviously decreased.


2005 ◽  
Vol 10 (1) ◽  
pp. 48-53 ◽  
Author(s):  
KunWei Li ◽  
XiaoTian Meng ◽  
Xue Liang ◽  
Hao Wang ◽  
Hui Yan

2009 ◽  
Vol 99 (1) ◽  
pp. 291-295 ◽  
Author(s):  
Kai-Huang Chen ◽  
Ting-Chang Chang ◽  
Guan-Chang Chang ◽  
Yung-En Hsu ◽  
Ying-Chung Chen ◽  
...  

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