Growth of Highly Transparent Nano-Crystalline Diamond Films by Microwave CVD

1997 ◽  
Vol 495 ◽  
Author(s):  
D. M. Bhusari ◽  
K. H. Chen ◽  
J. R. Yang ◽  
S. T. Lin ◽  
T. Y. Wang ◽  
...  

ABSTRACTWe report here growth of highly transparent nano-crystallinc diamond films on quartz substrates by microwave plasma enhanced CVD. Optical transmittancc of greater than 84% beyond 700 nm has been obtained for films as thick as 1 μm. Such high optical transparency of these films is primarily attributed to the high smoothness of their surface (average roughness of about 60–65 À) as well as the high content of sp3 bonded carbon therein. The effects of methane fraction in the source gas, substrate temperature and grain size of the diamond powder used for substrate pretreatment on the structural and optical properties of these films arc also studied.

2011 ◽  
Vol 117-119 ◽  
pp. 1310-1314
Author(s):  
Xing Rui Li ◽  
Xin Wei Shi ◽  
Ning Yao ◽  
Xin Chang Wang

Nano-crystalline diamond (NCD) films with good adhesion were deposited on flexible copper substrate with Ni interlayer by Microwave Plasma Chemical Vapor Deposition (MPCVD). In this paper, two-stage method was used to improve the adhesion between the copper substrates and the diamond films. The effect of deposition time of the first stage on the morphology, crystal structure, non-diamond phase and adhesive properties of diamond films was investigated. The performance and structure of the diamond films were studied by Scanning Electron Microscope (SEM), Raman Spectroscopy (Raman) and X-Ray Diffraction (XRD). The results showed that the films were nano-crystalline diamond films positively. Impress method was used to examine the adhesion between diamond film and the substrate. When deposition time is 1.5h, the adhesion between diamond film and the copper substrate is better than the others. When it was 2.5h or longer, because the graphite layers existed as intermediate, the adherence between the diamond films and copper substrates was very poor. Therefore, the diamond films were easily peeled off from the substrates. Otherwise, the second stage called annealing process after the deposition played an important role to the adhesion. The films would be easily peeled off by curling without the annealing process.


1998 ◽  
Vol 13 (7) ◽  
pp. 1735-1737 ◽  
Author(s):  
Donald R. Gilbert ◽  
Dong-Gu Lee ◽  
Rajiv K. Singh

We have developed a unique method to produce smooth diamond films using a modified microwave plasma process system. This method consists of sequential in situ deposition and planarization in an electron cyclotron resonance plasma system. Diamond films were deposited to a thickness of 3.0 μm in this system at a pressure of 1.000 Torr from gas mixtures of methanol and hydrogen. Deposition was followed by planarization using a two-grid ion beam extraction process with a pure oxygen plasma at 10 mTorr. The average roughness of the diamond films so produced was as low as 30 nm, which was a factor of two lower than that of the as-deposited diamond films.


2012 ◽  
Vol 258 (6) ◽  
pp. 2174-2176 ◽  
Author(s):  
Linjun Wang ◽  
Jian Huang ◽  
Qingkai Zeng ◽  
Ke Tang ◽  
Run Xu ◽  
...  

2002 ◽  
Vol 16 (06n07) ◽  
pp. 876-880
Author(s):  
S. G. Wang ◽  
Q. Zhang ◽  
D. J. Yang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
...  

In this paper, we studied the effects of hydrogen gas flow ratio of [H2]/[N2 + CH4 + H2] on the quality of nanometer diamond (nano-diamond) films prepared by microwave plasma enhanced chemical vapor deposition method. Nano-diamond films were deposited on the silicon substrates from a gaseous mixture of nitrogen, methane and hydrogen. The experimental results show that if only using a gaseous mixture of nitrogen and methane, although we can obtain nano-diamond films with a grain size of about 5nm, the diamond films contain much non-diamond components. With hydrogen addition, and with increasing the hydrogen gas flow ratio from 1 to 10%, the non-diamond components in the films are significantly reduced and the grain size of the films increases from 5nm to 60nm. However optical transmittance of the films increases with increasing hydrogen gas flow ratio from 1 to 7% because of an improvement of film quality, and then decreases with further increasing hydrogen gas flow ratio owing to the increase of film roughness.


2014 ◽  
Vol 912-914 ◽  
pp. 288-292
Author(s):  
Li Wei Xiong ◽  
Guo Hua Gong ◽  
Jian Hua Wang ◽  
Xiao Hui Cui ◽  
Wei Zou

Diamond-Like Carbon (DLC) films were deposited on quartz substrates by using a gas mixture of hydrogen-methane-oxygen in the Star-Shape Microwave Plasma enhanced Chemical Vapor Deposition (MPCVD) reactor. The pretreatment parameters include the pretreatment methods and the pretreatment time was optimized. Results showed that ultrasonically abrasive in the acetone solution with nanocrystalline diamond powder in it was an efficient pretreatment method to advance the deposition of DLC films, and 10 minute turned to be the most appropriate time for this pretreatment. The Fourier Transform Infrared spectrometer (FTIR) showed that the DLC films synthesized by the optimized technics have high transparence fit for optical applications. These indicated that the Star-Shape MPCVD reactor was the perfect equipment for the volume-produce of DLC films for its unique big reactive cavity.


1994 ◽  
Vol 9 (8) ◽  
pp. 2154-2163 ◽  
Author(s):  
K.J. Grannen ◽  
R.P.H. Chang

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.


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