High temperature XRD of zirconia/alumina multilayer thin films prepared by pulsed laser deposition

2009 ◽  
Author(s):  
G. Balakrishnan ◽  
S. Murugesan ◽  
C. Ghosh ◽  
P. Kuppusami ◽  
R. Divakar ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multilayer Thin Films ◽  
High Temperature Xrd

High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

2011 ◽  
Vol 47 (4) ◽  
pp. 415-422 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
E. Mohandas ◽  
D. Sastikumar
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

1992 ◽  
Vol 268 ◽  
Author(s):  
D.B. Fenner ◽  
O. Li ◽  
P.W. Morrison ◽  
J. Cosgrove ◽  
L. Lynds ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Narrow Band ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Wide Band ◽  
Compound Semiconductor ◽  
Laser Deposition ◽  
Epitaxial Thin Films

ABSTRACTThe successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

High-Temperature Ferromagnetism of Zn1-xMnxOy Thin Films Synthesized by Pulsed Laser Deposition

2020 ◽  
Vol 989 ◽  
pp. 215-220
Author(s):  
A.S. Kuz'mina ◽  
M.P. Kuz'min
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ferromagnetic Behavior ◽  
Synthesis Conditions ◽  
Semiconductor Matrix ◽  
Crystallite Sizes

The paper discusses the findings of the study of the structural and magnetic properties of Zn1-xMnxOy thin films (x = 0-0.08), synthesized by pulsed laser deposition under different conditions. It has been discovered that during the doping, thin films remain single-phased and retain wurtzite structure (ZnO wurz), oriented along the direction (001). It has been determined that thin films obtained under the same synthesis conditions have similar crystallite sizes, which is confirmed by the substitution of Mn2+ ions with Zn2+ ions in the Zn O semiconductor matrix. It has been found that annealing of samples in the oxygen atmosphere increases the surface roughness from 1-3 nm to ~ 10 nm; the higher the concentration of manganese in Zn1-xMnxOy films is, the greater the value of Ra. It has been demonstrated that, at room temperature, all Zn1-xMnxOy thin films (x = 0-0.08) exhibit ferromagnetic behavior, which is more pronounced upon the increase in concentration of oxygen vacancies and manganese in the samples. It is assumed that two mechanisms explaining high-temperature ferromagnetism coexist in the films: the first one is determined by ferromagnetic exchange between Mn2+ cations by means of oxygen vacancies, the second one deals with super-exchange interaction between oxygen vacancies.

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