The Effects of High Temperature Annealing and Composition on the Dielectric Properties of Thin Films of BaxSrzTiO3

1997 ◽  
Vol 493 ◽  
Author(s):  
Adriaan C. Carter ◽  
James S. Horwitz ◽  
Douglas B. Chrisey ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Temperature Annealing ◽  
Annealing Conditions ◽  
Dc Bias ◽  
Deposited Films ◽  
Deposition Conditions

ABSTRACTSingle phase, (100) oriented Ba0.5Sr0.5TiO3 films have been deposited by pulsed laser deposition onto (100) LaAIO3, SrTiO3, MgO substrates. The dielectric properties of these films were measured using interdigitated capacitors as a function of DC bias and temperature at 1 MHz and as a function of DC bias at 1 to 20 GHz at room temperature. Deposited films were annealed over a temperature range of 900 to 1350 C for 1 to 8 hours to observe its effect on dielectric properties. Chemical analysis on films deposited from stoichiometric targets showed the films to be up to 6% deficient in Ba and Sr under typical PLD deposition conditions. Optimal annealing conditions and target stoichiometries for minimizing dielectric loss and maximizing tuning are discussed.

The Structure and Electric Field Dependent Dielectric Properties of Annealed Sr1−xBaxTio3 Ferroelectric Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
L.A. Knauss ◽  
J.M. Pond ◽  
J.S. Horwitz ◽  
C.H. Mueller ◽  
R.E. Treece ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Single Phase ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films ◽  
Post Deposition

AbstractThe effect of a post deposition anneal on the structure and dielectric properties of epitaxial Sr1−x, BaxTiO3 (SBT) thin films with x = 0.35, 0.50 and 0.60 has been measured. The films were grown by pulsed laser deposition on LaAlO3(001) substrates at 750°C in 350 mTorr of oxygen. The asdeposited films were single phase, (001) oriented with 0)-scan widths for the (002) reflection between 0.160 and 0.50'. The dielectric properties of the as-deposited films exhibit a broad temperature dependence and a peak which is as much as 50 K below the peak in bulk SBT. Also, the lattice parameter, as measured by x-ray diffraction, of the as-deposited films was larger than the bulk indicating strain in the films. The as-deposited films were annealed for 8 hours at 900°C in oxygen. The dielectric properties of the annealed films were closer to that of bulk SBT and the lattice parameter was closer to the bulk lattice parameter indicating a reduction of strain. Annealing of as-deposited films also resulted in an increased dielectric tuning without increased dielectric loss.

scholarly journals Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Annealing Conditions ◽  
Vacuum Atmosphere

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.

Annealing behaviors of structural, interfacial and optical properties of HfO2 thin films prepared by plasma assisted reactive pulsed laser deposition

2010 ◽  
Vol 25 (4) ◽  
pp. 680-686 ◽  
Author(s):  
Zhifeng Ying ◽  
Wentao Tang ◽  
Zhigao Hu ◽  
Wenwu Li ◽  
Jian Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Optical Properties ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Temperature Annealing ◽  
Good Thermal Stability ◽  
Transmission Measurements ◽  
Deposited Films

The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.

Pulsed Laser Deposition of Thin Silicon Nitride Films

1992 ◽  
Vol 285 ◽  
Author(s):  
Xiangqun Xu ◽  
Kanekazu Seki ◽  
Naiqun Chen ◽  
Hideo Okabe ◽  
Joan M. Frye ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Absorption Characteristic ◽  
Silicon Nitride Films ◽  
Ft Ir ◽  
Substrate Temperatures ◽  
Deposited Films

ABSTRACTABSTRACTPulsed laser deposition of compressed Si3N4 powder has been used to grow thin SiNx films on a variety of substrates at substrate temperatures ranging from room temperature to 350°C. Film composition was analyzed by Auger electron spectroscopy. The SiN0.33 films have a band gap of 5.60 eV as measured by UV absorption. The FT-IR spectrum shows an absorption characteristic of Si-N. The Si/N ratio in the deposited films corresponding to various substrate temperatures has also been determined.

Crystallization of yttrium-iron garnet (YIG) in thin films: Nucleation and growth aspects

2007 ◽  
Vol 1036 ◽  
Author(s):  
Michael V. Zaezjev ◽  
Manda Chandra Sekhar ◽  
Marcello Ferrera ◽  
Luca Razzari ◽  
Barry M Holmes ◽  
...  
Keyword(s):  
Thin Films ◽  
Yttrium Iron Garnet ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Yttrium Iron ◽  
Iron Garnet ◽  
Parasitic Phase ◽  
Deposited Films ◽  
Post Deposition

AbstractWe have studied the crystallization of the yttrium - iron garnet (Y3Fe5O12, YIG) polycrystalline phase in thin films fabricated by means of pulsed laser deposition . Films were deposited on MgO substrates in vacuum, in argon, and in oxygen. A subsequent post-deposition heat treatment (annealing) was done at 800°C in air. We have shown that the crystallization of YIG was precluded by co-existent parasitic phases present in the as-deposited films. Specifically, the growth of the parasitic phase needs to be suppressed in order to get a single-phase polycrystalline YIG. Lowering the substrate temperature has been shown to be a simple and efficient way to suppress the growth of parasitic phase and to obtain good quality YIG films after thermal treatment. This procedure has been demonstrated to be successful even when the YIG films were grown in vacuum and their composition was significantly out of stoichiometry.

Pulsed Laser Deposition of (Ba,Sr)TiO3 Ferroelectric thin Films

1998 ◽  
Vol 526 ◽  
Author(s):  
J.S. Horwitz ◽  
W. Chang ◽  
A.C. Carter ◽  
J.M. Pond ◽  
S.W. Kirchoefer ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Loss ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Dissipation Factor ◽  
Ferroelectric Film ◽  
Laser Deposition ◽  
Zero Field ◽  
Dc Bias

AbstractSingle phase, (100) oriented Ba0.5Sr0.5TiO3 (BST) thin films have been deposited onto (100) LaAlO3, SrTiO3, and MgO substrates using pulsed laser deposition (PLD). Interdigitated capacitors patterned on top of the ferroelectric film have been used to measure the dielectric constant and dissipation factor of these films as a function of DC bias and temperature at 1 MHz and as a function of DC bias and frequency (1 to 20 GHz) at room temperature. At room temperature, the capacitance can be reduced by as much as a factor of 4 using an electric field of ≤ 80 kV/cm. The dielectric properties (% tuning and dielectric loss) of the ferroelectric film is sensitive to both the deposition and post processing conditions. Optical imaging of the ferroelectric films using confocal scanning optical microscopy (CSOM) shows reproducible polarization fluctuations over sub-micrometer length scales. Dielectric loss in the ferroelectric film is reduced through a combination of post deposition processing and donor/acceptor doping of the films. A zero field tan5 = 0.01 - 0.005 has been measured for BST films which show significant tuning at microwave frequencies.

Dielectric Properties of Ba1−xSxTiO3 Films Grown on LaAlO3 Substrates

1999 ◽  
Vol 603 ◽  
Author(s):  
Y. Gim ◽  
T. Hudson ◽  
Y. Fan ◽  
A. T. Findikoglu ◽  
C. Kwon ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Barium Strontium Titanate ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Dependent ◽  
Peak Voltage ◽  
Capacitance Measurements ◽  
Barium Strontium ◽  
Bst Films

AbstractWe report the crystal structures and dielectric properties of barium strontium titanate, Ba1−xSrxTiO3 (BST), films deposited on LaAlO3 substrates using pulsed laser deposition, where x = 0.1 to 0.9 at an interval of 0.1. We have found that when x < 0.4 the c-axis is parallel to the plane of the substrate but normal as x approaches 1. Temperature-dependent capacitance measurements at 1 MHz show that the capacitance has a peak and that the peak temperature decreases with increasing x. We have found that the peak temperatures of the films are about 70 °C higher than those of bulk BSTs when x < 0.4. From room-temperature capacitance (C) vs applied voltage (V) measurements, we have found that the C-V curves of the BST films exhibit hysteresis except for x = 0.9 and that the peak voltage at which the capacitance becomes maximum decreases with increasing x. At room temperature, the Ba0.6Sr0.4 TiO3 film exhibits the largest capacitance tunability (≈ 37%) with an applied electric field of 40 kV/cm.

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