Pulsed Laser Deposition of (Ba,Sr)TiO3 Ferroelectric thin Films

1998 ◽  
Vol 526 ◽  
Author(s):  
J.S. Horwitz ◽  
W. Chang ◽  
A.C. Carter ◽  
J.M. Pond ◽  
S.W. Kirchoefer ◽  
...  

AbstractSingle phase, (100) oriented Ba0.5Sr0.5TiO3 (BST) thin films have been deposited onto (100) LaAlO3, SrTiO3, and MgO substrates using pulsed laser deposition (PLD). Interdigitated capacitors patterned on top of the ferroelectric film have been used to measure the dielectric constant and dissipation factor of these films as a function of DC bias and temperature at 1 MHz and as a function of DC bias and frequency (1 to 20 GHz) at room temperature. At room temperature, the capacitance can be reduced by as much as a factor of 4 using an electric field of ≤ 80 kV/cm. The dielectric properties (% tuning and dielectric loss) of the ferroelectric film is sensitive to both the deposition and post processing conditions. Optical imaging of the ferroelectric films using confocal scanning optical microscopy (CSOM) shows reproducible polarization fluctuations over sub-micrometer length scales. Dielectric loss in the ferroelectric film is reduced through a combination of post deposition processing and donor/acceptor doping of the films. A zero field tan5 = 0.01 - 0.005 has been measured for BST films which show significant tuning at microwave frequencies.

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.


2004 ◽  
Vol 36 (4-6) ◽  
pp. 403-408 ◽  
Author(s):  
D. O’Mahony ◽  
F. McGee ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
J.M.D. Coey

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5467-5470 ◽  
Author(s):  
Norihiro Sakai ◽  
Yoshihiro Umeda ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami

2011 ◽  
Vol 519 (10) ◽  
pp. 3312-3317 ◽  
Author(s):  
Hanbin Wang ◽  
Qiong He ◽  
Hao Wang ◽  
Xina Wang ◽  
Jun Zhang ◽  
...  

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).


2006 ◽  
Vol 89 (24) ◽  
pp. 242504 ◽  
Author(s):  
X. Y. Qiu ◽  
Q. M. Liu ◽  
F. Gao ◽  
L. Y. Lu ◽  
J.-M. Liu

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