Formation of Ultra Smooth Bi-Based Ferroelectric Films and their size effect on Dielectric Constant

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Tabata ◽  
T. Yanagita ◽  
M. Hamada ◽  
T. Kawai
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Coercive Field ◽  
Smooth Surface ◽  
Remanent Polarization ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gate Bias ◽  
Deposition Technique ◽  
Ferroelectric Films

ABSTACTWe have formed Bi-based ferroelectric films, such as Bi2WO6, Bi2VO5.5(n=1), Bi2SrTa2O9, Bi3TiNbO9(n=2) and Bi4Ti3O12(n=3) using a pulsed laser deposition technique. Especially, the Bi2VO5.5 film shows an atomically smooth surface with a flat 2000-3000Å wide terrace and steps of 8 Å and 16Å which correspond to a half and one unit cell, respectively. The dielectric constant, remanent polarization and coercive field of the Bi2VO5.5 thin films formed on Nb-SrTiO3(100) are 8, 3.0 μ C/cm2 and 16.0 kV/cm, respectively. The Bi2VO5.5 film formed on SiO2/Si(100) shows memory windows of 0.35V against a±2V gate bias during C-V measurements‥

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Ferroelectric Properties of Bi4-xYbxTi3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 216-219
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Si Substrate

Yb-doped bismuth titanate and random oriented Bi4-xYbxTi3O12 (BYbT) thin films were fabricated on Pt/Ti/SiO2/Si substrate with pulsed laser deposition method. The structures and ferroelectric properties of the BYbT films were investigated. Yb doping resulted in a marked improvement in remanent polarization (Pr) and coercive field (Ec). At an applied electric field of 120kV/cm, the Pr and (Ec) of the BYbT (x=0.8) films annealed at 650°C were 20 μC/cm2 and 85 KV/cm, respectively.

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

2010 ◽  
Vol 197 (1-3) ◽  
pp. 129-134 ◽  
Author(s):  
J. J. Dolo ◽  
H. C. Swart ◽  
E. Coetsee ◽  
J. J. Terblans ◽  
O. M. Ntwaeaborwa ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Luminescence Properties ◽  
Xps Analysis ◽  
Deposition Technique

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Piezoresponse Force Microscopy Studies of pc-BiFeO3 Thin Films Produced by the Simultaneous Laser Ablation of Bi and FeO3

2012 ◽  
Vol 1477 ◽  
Author(s):  
C. I. Enriquez-Flores ◽  
J. J. Gervacio-Arciniega ◽  
F. J. Flores-Ruiz ◽  
D. Cardona ◽  
E. Camps ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Domain Size ◽  
Piezoresponse Force Microscopy ◽  
Laser Deposition ◽  
Bismuth Iron Oxide ◽  
Deposition Technique ◽  
Force Microscopy ◽  
Bifeo3 Thin Films ◽  
Ferroelectric Domains

ABSTRACTBismuth iron oxide BFO films were produced by the pulsed laser deposition technique. These films are a mixture of BiFeO3 ferroelectrical and Bi25FeO40 piezoelectrical phases. The ferroelectrical domain structure of these films was studied via contact resonance piezoresponse force microscopy (CR-PFM) and resonance tracking PFM (RT-PFM). The proportions of area of these BFO phases were derived from the PFM images. The ferroelectrical domain size corresponds to the size of the BiFeO3 crystals. The CR-PFM and RT-PFM techniques allowed us to be able to distinguish between the ferroelectric domains and the piezoelectric regions existing in the polycrystalline films.

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