Electronic Structure of Amorphous Silicon

1997 ◽  
Vol 491 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Tight Binding ◽  
Localized States ◽  
Band Offset ◽  
Valence Band Offset ◽  
Tight Binding Approximation ◽  
Exponential Tails ◽  
Si Model ◽  
Hydrogenated Amorphous

ABSTRACTThe electronic structure of a continuous network model of tetrahedrally bonded amorphous silicon (a-Si) and of a model hydrogenated amorphous silicon (a-Si:H) that we have built from the a-Si model are calculated in the tight binding approximation. The band edges near the gap are characterized by exponential tails of localized states induced mainly by the variations in bond angles. The spatial localization of the states is compared between a-Si and a-Si:H. Valence band offset between the amorphous and the crystalline phases is calculated.

Luminescent Amorphous Silicon Layers

1997 ◽  
Vol 486 ◽  
Author(s):  
G. Allan ◽  
C. Delerue ◽  
M. Lannoo
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Radiative Recombination ◽  
Crystalline Silicon ◽  
Tight Binding ◽  
Blue Shift ◽  
Localized States ◽  
Structure Model ◽  
Radiative Recombination Rate ◽  
Tight Binding Approximation

AbstractThe electronic structure of amorphous silicon layers has been calculated within the empirical tight binding approximation using the Wooten-Winer-Weaire atomic structure model. We predict an important blue shift due to the confinement for layer thickness below 3 nm and we compare with crystalline silicon layers. The radiative recombination rate is enhanced by the disorder and the confinement but remains quite small. The comparison of our results with experimental results shows that the density of defects and localized states in the studied samples must be quite small.

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

2019 ◽  
Vol 7 (16) ◽  
pp. 4817-4821 ◽  
Author(s):  
U. Sandhya Shenoy ◽  
D. Krishna Bhat
Keyword(s):  
Electronic Structure ◽  
Synergistic Effect ◽  
Band Gap ◽  
High Performance ◽  
Room Temperature ◽  
Band Offset ◽  
Valence Band Offset ◽  
Co Doping ◽  
Tin Telluride ◽  
Structure Engineering

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

Model of hydrogenated amorphous silicon and its electronic structure

1993 ◽  
Vol 47 (7) ◽  
pp. 3991-3994 ◽  
Author(s):  
J. M. Holender ◽  
G. J. Morgan ◽  
R. Jones
Keyword(s):  
Electronic Structure ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Local Electronic Structure and Short-Range Order in a Computer Simulated Amorphous Metal

1991 ◽  
Vol 02 (01) ◽  
pp. 232-237 ◽  
Author(s):  
A.Ya. BELENKII ◽  
M.A. FRADKIN
Keyword(s):  
Electronic Structure ◽  
Short Range ◽  
Short Range Order ◽  
Local Density ◽  
Tight Binding ◽  
Amorphous Metal ◽  
Range Order ◽  
Tight Binding Approximation ◽  
Electronic Parameters ◽  
Local Electronic Structure

The relationship between topological short-range order and a local electronic structure was analyzed in the computer model of an amorphous metal. The model, obtained by means of the original self-consistent cluster simulation procedure was studied with the use of Voronoi tesselation, the distribution of the atomic level stresses and the icosahedral order parameters. It was found that a marked correlation exists within 2 atomic parameter groups, one of which corresponds to the local dilatation and the other to the spherical symmetry distortion. The local density of electronic d-states (DOS) and the distribution of the electronic parameters was analyzed. The local electronic structure, calculated within the tight-binding approximation, appears to depend on the local atomic order by two-fold means: the interatomic distances decrease leads to the increase of the local bandwidth, and the icosahedral configuration distortion reduces the DOS at the Fermi level. The study of the local configurations stability shows, that the most stable configurations are the slightly distorted icosahedra.

Investigations of Localized States in Hydrogenated Amorphous Silicon

1984 ◽  
Vol 23 (Part 1, No. 1) ◽  
pp. 6-10 ◽  
Author(s):  
Fon-Shan Huang ◽  
Hua Chang ◽  
Jiann-Ruey Chen ◽  
Yuen-Chung Liu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Localized States ◽  
Hydrogenated Amorphous

Electronic structure and localized states in amorphous Si and hydrogenated amorphous Si

2019 ◽  
Vol 21 (24) ◽  
pp. 13248-13257 ◽  
Author(s):  
Reza Vatan Meidanshahi ◽  
Stuart Bowden ◽  
Stephen M. Goodnick
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Localized States ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Calculated DOS of a-Si:H close to the band gap for different H concentrations in the case of (a) thermodynamic and (b) kinetic H addition.

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