Ab Initio Calculation of Tight-Binding Parameters
Keyword(s):
ABSTRACTWe calculate ab initio values of tight-binding parameters for the /-electron metal Ce and various phases of Si, from local-density functional one-electron Hamiltonian and overlap matrix elements. Our approach allows us to unambiguously test the validity of the common minimal basis and two-center approximations as well as to determine the degree of transferability of both nonorthogonal and orthogonal hopping parameters in the cases considered.
Keyword(s):
2001 ◽
Vol 32
(1-4)
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pp. 267-278
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Keyword(s):
1988 ◽
Vol 21
(34)
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pp. 5735-5745
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1998 ◽
Vol 109
(13)
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pp. 5585-5595
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