3D Atomistic Simulations of Submicron Device Fabrication

1997 ◽  
Vol 490 ◽  
Author(s):  
Marius M. Buneat ◽  
Scott T. Dunham
Keyword(s):  
Monte Carlo ◽  
Local Environment ◽  
Channel Length ◽  
Deep Submicron ◽  
Device Fabrication ◽  
Atomistic Simulations ◽  
Atomic Processes ◽  
Lattice Monte Carlo ◽  
Submicron Devices ◽  
Dopant Redistribution

ABSTRACTWe use the Lattice Monte Carlo method to simulate the coupled motion of vacancies, interstitials and dopants during the annealing of a 50nm channel length NMOS structure. The initial defect locations are taken from Monte Carlo ion implantation simulations. The resulting defects diffuse, recombine, pair and cluster, with rates of these atomic processes calculated based on the local environment. Dopant redistribution occurs via both displacement by vacancies as well as the formation and diffusion of mobile boron and arsenic interstitials. We use these simulations to demonstrate the potential of atomistic simulations for deep submicron devices and to explore the influence of atomistic processes on macroscopic behavior.

Atomistic Simulations of Damage Evolution in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Marius M. Buneat ◽  
Pavel Fastenko ◽  
Scott T. Dunham
Keyword(s):  
Molecular Dynamics ◽  
Monte Carlo ◽  
Long Range ◽  
Tight Binding ◽  
Atomistic Simulations ◽  
Spatial Correlations ◽  
Range Interaction ◽  
Lattice Monte Carlo ◽  
Long Range Interactions ◽  
High Doses

ABSTRACTWe have studied the damage annealing process using kinetic lattice Monte Carlo (KLMC) and molecular dynamics (MD) with initial damage distribution from Monte Carlo ion implant simulations. MD calculations find a long range interstitial vacancy interaction, as also seen in previous tight-binding molecular dynamics (TBMD) simulations.1 The influence of the long range interaction as well as the initial spatial correlations present in the implant damage are then analyzed with KLMC in the form of corrections to the +1 model. We find that both long range interactions and the initial spatial correlations are significant at low doses, while the effects disappear at high doses.

Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon

2003 ◽  
Vol 765 ◽  
Author(s):  
Zudian Qin ◽  
Scott T. Dunham
Keyword(s):  
Electrical Potential ◽  
Standard Condition ◽  
Atomistic Simulations ◽  
Coulombic Interactions ◽  
Coulombic Repulsion ◽  
Lattice Monte Carlo ◽  
Kinetic Lattice Monte Carlo ◽  
Dopant Redistribution ◽  
Charged Defects ◽  
Quantum Perturbation Theory

AbstractCarrier distributions associated with point charges in silicon solved with quantum perturbation theory are used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions are used in kinetic lattice Monte Carlo (KLMC) simulations of point defect-mediated diffusion to study dopant redistribution and associated variations in carrier concentration. Over a broad range of doping concentrations and temperatures, Coulombic repulsion between like dopants leads to ordering, resulting in a more uniform electrical potential distribution and therefore reduced variations in device performance compared with random doping, the standard condition assumed in previous doping fluctuation analyses.

scholarly journals Partial deconfinement at strong coupling on the lattice

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
Hiromasa Watanabe ◽  
Georg Bergner ◽  
Norbert Bodendorfer ◽  
Shotaro Shiba Funai ◽  
Masanori Hanada ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Matrix Models ◽  
Gauge Group ◽  
Strong Coupling ◽  
Direct Evidence ◽  
Lattice Monte Carlo

Abstract We provide evidence for partial deconfinement — the deconfinement of a SU(M) subgroup of the SU(N) gauge group — by using lattice Monte Carlo simulations. We take matrix models as concrete examples. By appropriately fixing the gauge, we observe that the M × M submatrices deconfine. This gives direct evidence for partial deconfinement at strong coupling. We discuss the applications to QCD and holography.

Hot Carrier Effects in Deep Submicron Nmosfets

1996 ◽  
Vol 428 ◽  
Author(s):  
Abhijit Phanse ◽  
Samar Saha
Keyword(s):  
Electric Fields ◽  
Channel Length ◽  
Deep Submicron ◽  
Short Channel ◽  
Hot Carrier ◽  
Velocity Saturation ◽  
Substrate Current ◽  
Hot Carrier Effects ◽  
Saturation Effects ◽  
Channel Lengths

AbstractThis paper addresses hot-carrier related reliability issues in deep submicron silicon nMOSFET devices. In order to monitor the hot-carrier induced device degradation, the substrate current was measured for devices with varying channel lengths (20 um - 0.24 um) under various biasing conditions. Deep submicron devices experience velocity saturation of channel carriers due to extremely high lateral electric fields. To evaluate the effects of velocity saturation in the channel, the pinch-off length in the channel was extracted for all the devices of the target technology. It was observed that for very short channel devices, carriers in most of the channel experience velocity saturation and almost the entire channel gets pinched off. It is shown in this paper that for very short channel devices, the pinch-off length in the channel is limited by the effective channel length, and that velocity saturation effects are critical to the transport of channel carriers.

scholarly journals Lattice Monte Carlo calculations for unitary fermions in a finite box

2013 ◽  
Vol 87 (2) ◽  
Author(s):  
Michael G. Endres ◽  
David B. Kaplan ◽  
Jong-Wan Lee ◽  
Amy N. Nicholson
Keyword(s):  
Monte Carlo ◽  
Lattice Monte Carlo ◽  
Monte Carlo Calculations
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