Atomistic Simulations of Damage Evolution in Silicon
Keyword(s):
ABSTRACTWe have studied the damage annealing process using kinetic lattice Monte Carlo (KLMC) and molecular dynamics (MD) with initial damage distribution from Monte Carlo ion implant simulations. MD calculations find a long range interstitial vacancy interaction, as also seen in previous tight-binding molecular dynamics (TBMD) simulations.1 The influence of the long range interaction as well as the initial spatial correlations present in the implant damage are then analyzed with KLMC in the form of corrections to the +1 model. We find that both long range interactions and the initial spatial correlations are significant at low doses, while the effects disappear at high doses.
1997 ◽
Vol 101
(24)
◽
pp. 4322-4331
◽
Keyword(s):
2001 ◽
Vol 226-230
◽
pp. 588-589
◽
Keyword(s):
2020 ◽
Vol 540
◽
pp. 123228
2015 ◽
Vol 17
(25)
◽
pp. 16443-16453
◽
1985 ◽
Vol 34
(3)
◽
pp. 225-230
◽
1938 ◽
Vol 34
(2)
◽
pp. 238-252
◽
2013 ◽
Vol 27
(24)
◽
pp. 1350143
◽
Keyword(s):