Control of Emissive Layer Interfaces with Inorganic Thin Layer Between 8-Hydroxyquinoline Aluminum and Diamine Layers in Organic El Diode

1997 ◽  
Vol 488 ◽  
Author(s):  
Yutaka Ohmori ◽  
Yoshitaka Kurosaka ◽  
Norio Tada ◽  
Akihiko Fujii ◽  
Katsumi Yoshino
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Carrier Transport ◽  
Optical Quality ◽  
Transport Layer ◽  
Emissive Layer ◽  
Organic Interfaces ◽  
Marker Layer ◽  
Organic Electroluminescent

AbstractControl of organic interfaces by insertion of a thin inorganic film (SiO) has been investigated for an organic electroluminescent (EL) diode which consists of 8-hydroxyquinoline aluminum (Alq3) and diamine derivative (TPD). In order to evaluate optical quality of the emissive layer at the interface, thin film of emissive marker layer was inserted into the emissive layer at the interface between the emissive layer and the carrier transport layer. The EL emission spectrum and the optical characteristics have been discussed for the EL diode with and without inorganic film.

High resolution experiments with a cross-hair beam-stop

1978 ◽  
Vol 36 (2) ◽  
pp. 100-101
Author(s):  
B. Tesche
Keyword(s):  
High Resolution ◽  
Thin Layer ◽  
Fourier Spectrum ◽  
Optical Quality ◽  
Substantial Part ◽  
Great Loss ◽  
Beam Stop ◽  
Partial Exclusion ◽  
The Cross

Dupouy and collaborators achieved what is now known as a central beam stop with diaphragms which were partly covered by strips. The width and arrangement of these strips, however, excluded a substantial part of the Fourier spectrum, although the zero beam could readily be stopped.We succeeded in arranging a cross-hair in the center of an aperture. The three-micron thick quartz fibers are made conductive by evaporating gold onto them and also in the thin layer aperture onto which they are mounted. By this means, charging of the cross-hair and contamination of the apertures are avoided. The thin diameter of the cross-hairs permits the exclusion of the zero beam as well, yet without any great loss of the Fourier spectrum. Furthermore, small shifts of the aperture permit partial exclusion of the zero beam, which leads to very interesting contrast phenomena. It must be emphasized that the optical quality of the microscope is not impaired by such small shifts of the aperture and that the cut-off frequency remains unchanged.

scholarly journals Investigation of Inverted Perovskite Solar Cells for Viscosity of PEDOT:PSS Solution

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 358 ◽  
Author(s):  
Pao-Hsun Huang ◽  
Yeong-Her Wang ◽  
Chien-Wu Huang ◽  
Wen-Ray Chen ◽  
Chien-Jung Huang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Considerable Impact ◽  
Stable Performance

In this paper, we demonstrate that the inverted CH3NH3PbI3 (perovskite) solar cells (PSCs) based on fullerene (C60) as an acceptor is fabricated by applying an improved poly(3,4-ethlyenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution as a hole transport layer (HTL). The power conversion efficiency (PCE) of inverted PSCs is increased by 37.5% with stable values of open-circuit voltage (VOC) and fill factor (FF) because we enhance the viscosity of the PEDOT:PSS solution, indicating the perfect effect on both external quantum efficiency (EQE) and surface grain size. The characteristics of the PEDOT:PSS solution, which is being improved through facile methods of obtaining excellent growth of PEDOT:PSS thin film, have a considerable impact on carrier transport. A series of further processing fabrications, including reliable and feasible heating and stirring techniques before the formation of the PEDOT:PSS thin film via spin-coating, not only evaporate the excess moisture but also obviously increase the conductivity. The raised collection of holes become the reason for the enhanced PCE of 3.0%—therefore, the stable performance of FF and VOC are attributed to lower series resistance of devices and the high-quality film crystallization of perovskite and organic acceptors, respectively.

scholarly journals Synthesis and Characterization of SnO2 Thin Film Semiconductor for Electronic Device Applications

2021 ◽  
Vol 7 (SpecialIssue) ◽  
pp. 377-381
Author(s):  
Aris Doyan ◽  
Susilawati Susilawati ◽  
Kehkashan Alam ◽  
Lalu Muliyadi ◽  
Firdaus Ali ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Layer ◽  
Band Gap ◽  
Band Gap Energy ◽  
Synthesis And Characterization ◽  
Bandgap Energy ◽  
Gap Energy

Synthesis and characterization of SnO2 thin films with various types of doping materials such as aluminum, fluorine and indium have been successfully carried out. This study aims to determine the effect of various types of doping materials on the quality of thin films such as the energy band gap produced. The results showed that the higher the doping concentration, the more transparent the layer formed. In addition, the optical properties of thin films such as band gap energy are affected by the applied doping. The direct and indirect values ​​of the largest band gap energy for the percentage of 95:5% are 3.62 eV and 3.92 eV are found in the SnO2: In thin layer. Meanwhile, the lowest direct and indirect values ​​of band gap energy are in the thin layer of SnO2:(Al+F+In) for a percentage of 85:15%, namely 3.41 eV and 3.55 eV. The greater the amount of doping given, the smaller the bandgap energy produced. In addition, the more combinations of doping mixtures (aluminum, fluorine, and indium) given, the smaller the bandgap energy produced. This shows that the quality of a thin film of SnO2 produced is influenced by the amount of concentration and the type of doping used

High Crystalline Quality Perovskite Thin Films Prepared by a Novel Hybrid Evaporation/CVD Technique

2015 ◽  
Vol 1771 ◽  
pp. 187-192 ◽  
Author(s):  
Yanke Peng ◽  
Gaoshan Jing ◽  
Tianhong Cui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
High Vacuum ◽  
Hole Transport ◽  
Transport Layer ◽  
Crystal Quality ◽  
Precursor Film ◽  
High Quality

ABSTRACTPerformance of a perovskite based solar cell is highly determined by the crystalline qualities of the perovskite thin film sandwiched between an electron and a hole transport layer, such as grain size and uniformity of the film. Here, we demonstrated a new hybrid physical-chemical vapor deposition (HPCVD) technique to synthesis high quality perovskite films. First, a PbI2 precursor film was spin-coated on a mesoporous TiO2 (m-TiO2)/compact TiO2 (c-TiO2)/FTO substrate in ambient environment. Then, purified CH3NH3I crystal material was evaporated and the vapor reacted with the PbI2 precursor film in a vacuum pressure/temperature accurately controlled quartz tube furnace. In this technique, high vacuum (2mTorr) and low temperature (100°C) were applied to decrease perovskite film growth rate and reduce perovskite film defects. After vapor reaction, the perovskite film was annealed at 100°C for 10min in 20mTorr vacuum to recrystallize and remove CH3NH3I residue in order to further improve crystal quality of the thin film. Crystal quality of this perovskite thin film was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). SEM and AFM results illustrate perovskite thin films synthesized by this technique have larger grain sizes and more uniformity (RMS 11.6nm/Ra 9.3nm) superior to most existing methods. Strong peaks shown in the XRD chart at 14.18°, 28.52°, 31.96°, which were assigned to (110), (220), (330) miller indices of CH3NH3PbI3 perovskite crystal, indicate the complete reaction between CH3NH3I vapor and PbI2 precursor layer. High power conversion efficiency (PCE) up to 12.3% and stable efficiencies under four hours illumination of AM1.5 standard were achieved by these solar cells. This vacuum/vapor based technique is compatible with conventional semiconductor fabrication techniques and high quality perovskite film could be achieved through delicate process control. Eventually, perovskite based solar cells could be mass produced in low cost for large scale applications by this novel technique.

Vacuum deposition rate and optical quality of the As2S3 films

2015 ◽  
Vol 37 (0) ◽  
pp. 89-97
Author(s):  
В. М. Жихарєв ◽  
В. Ю. Лоя ◽  
А. М. Соломон ◽  
Я. В. Грицище
Keyword(s):  
Deposition Rate ◽  
Optical Quality ◽  
Vacuum Deposition

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Effect of defocus combined with rotation on the optical performance of trifocal toric IOLs

2021 ◽  
pp. 112067212110021
Author(s):  
Javier Ruiz-Alcocer ◽  
Irene Martínez-Alberquilla ◽  
Amalia Lorente-Velázquez ◽  
José F Alfonso ◽  
David Madrid-Costa
Keyword(s):  
Visual Quality ◽  
Optical Quality ◽  
Refractive Errors ◽  
Focal Points ◽  
Modulation Transfer ◽  
Optical Analysis ◽  
Toric Intraocular Lens ◽  
Toric Iols ◽  
Reference Situation

Purpose: To objectively analyze the optical quality of the FineVision Toric intraocular lens (IOL) with two cylinder powers when different combinations of rotations and residual refractive errors are induced. Methods: This study assessed the FineVision Toric IOL with two different cylinder powers: 1.5 and 3.0 diopters (D). Three different rotation positions were considered: centered, 5° and 10° rotated. An optical bench (PMTF) was used for optical analysis. The optical quality of the IOLs was calculated by the modulation transfer function (MTF) at five different focal points (0.0, 0.25, 0.50, 0.75, and 1.00 D). Results: The MTF averaged value of the reference situation was 38.58 and 37.74 for 1.5 and 3.0 D of cylinder, respectively. For the 1.5 D cylinder, the combination of 5° of rotation with a defocus of 0.25, 0.50, 0.75, and 1.0 D induced a decrease on the MTF of 12.39, 19.94, 23.43, 24.23 units, respectively. When induced rotation was 10°, the MTF decrease was 17.26, 23.40, 24.33, 24.48 units, respectively. For the 3.0 D cylinder, the combination of 5° with 0.25, 0.50, 0.75, and 1.0 D of defocus, induced a decrease on the MTF of 12.51, 18.97, 22.36, 22.48 units, respectively. When induced rotation was 10°, the MTF decrease was: 18.42, 21.57, 23.08, and 23.61 units, respectively. Conclusion: For both FineVision Toric IOLs there is a certain optical tolerance to rotations up to 5° or residual refractive errors up to 0.25 D. Situations over these limits and their combination would affect the visual quality of patients implanted with these trifocal toric IOLs.

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