High Crystalline Quality Perovskite Thin Films Prepared by a Novel Hybrid Evaporation/CVD Technique

2015 ◽  
Vol 1771 ◽  
pp. 187-192 ◽  
Author(s):  
Yanke Peng ◽  
Gaoshan Jing ◽  
Tianhong Cui

ABSTRACTPerformance of a perovskite based solar cell is highly determined by the crystalline qualities of the perovskite thin film sandwiched between an electron and a hole transport layer, such as grain size and uniformity of the film. Here, we demonstrated a new hybrid physical-chemical vapor deposition (HPCVD) technique to synthesis high quality perovskite films. First, a PbI2 precursor film was spin-coated on a mesoporous TiO2 (m-TiO2)/compact TiO2 (c-TiO2)/FTO substrate in ambient environment. Then, purified CH3NH3I crystal material was evaporated and the vapor reacted with the PbI2 precursor film in a vacuum pressure/temperature accurately controlled quartz tube furnace. In this technique, high vacuum (2mTorr) and low temperature (100°C) were applied to decrease perovskite film growth rate and reduce perovskite film defects. After vapor reaction, the perovskite film was annealed at 100°C for 10min in 20mTorr vacuum to recrystallize and remove CH3NH3I residue in order to further improve crystal quality of the thin film. Crystal quality of this perovskite thin film was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). SEM and AFM results illustrate perovskite thin films synthesized by this technique have larger grain sizes and more uniformity (RMS 11.6nm/Ra 9.3nm) superior to most existing methods. Strong peaks shown in the XRD chart at 14.18°, 28.52°, 31.96°, which were assigned to (110), (220), (330) miller indices of CH3NH3PbI3 perovskite crystal, indicate the complete reaction between CH3NH3I vapor and PbI2 precursor layer. High power conversion efficiency (PCE) up to 12.3% and stable efficiencies under four hours illumination of AM1.5 standard were achieved by these solar cells. This vacuum/vapor based technique is compatible with conventional semiconductor fabrication techniques and high quality perovskite film could be achieved through delicate process control. Eventually, perovskite based solar cells could be mass produced in low cost for large scale applications by this novel technique.

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 627
Author(s):  
Ponmudi Selvan Thiruchelvan ◽  
Chien-Chih Lai ◽  
Chih-Hung Tsai

Combustion processed nickel oxide (NiOx) thin film is considered as an alternative to the sol-gel processed hole transport layer for perovskite solar cells (PSCs). In this paper, NiOx thin film was prepared by the solution–combustion process at 250 °C, a temperature lower than the actual reaction temperature. Furthermore, the properties of the NiOx hole transport layer (HTL) in PSCs were enhanced by the incorporation of zinc (Zn) in NiOx thin films. X-ray diffraction and X-ray photoelectron spectroscopy results revealed that the formation of NiOx was achieved at lower annealing temperature, which confirms the process of the combustion reaction. The electrical conductivity was greatly improved with Zn doping into the NiOx crystal lattice. Better photoluminescence (PL) quenching, and low PL lifetime decay were responsible for better charge separation in 5% Zn doped NiOx, which results in improved device performance of PSCs. The maximum power conversion efficiency of inverted PSCs made with pristine NiOx and 5% Zn-NiOx as the HTL was 13.62% and 14.87%, respectively. Both the devices exhibited better stability than the PEDOT:PSS (control) device in an ambient condition.


2018 ◽  
Vol 875 ◽  
pp. 61-67 ◽  
Author(s):  
Shun Han ◽  
Sai Peng ◽  
Pei Jiang Cao ◽  
Wen Jun Liu ◽  
Yu Xiang Zeng ◽  
...  

High quality (200) and (111) orientations cubic MgZnO thin films were made on (200) and (111) orientations MgO substrates separately under different condition with higher and lower migration energy of reactive atoms separately. The crystal quality of (111) orientation MgZnO thin film is higher than (200) one because of the stronger horizontal migration of atoms on (111) surface under high temperature condition, the surface of (200) orientation MgZnO thin film is smoother than (111) orientation one because of lower vertical growth speed of (200) MgZnO grains. The band gap of (111) orientation MgZnO thin film is smaller than (200) one because of more Zn atoms in (111) orientation MgZnO lattice than that in (200) ones. This paper gives an effective method to improve crystal quality of different orientation MgZnO thin film under different condition, which is meaningful in application of cubic MgZnO in different areas.


Solar Energy ◽  
2021 ◽  
Vol 226 ◽  
pp. 154-160
Author(s):  
Fangling Mu ◽  
Zhen Liu ◽  
Wei Zi ◽  
Yang Cao ◽  
Xiaoman Lu ◽  
...  

2020 ◽  
Vol 28 (10) ◽  
pp. 1024-1033
Author(s):  
Khagendra P. Bhandari ◽  
Fadhil K. Alfadhili ◽  
Ebin Bastola ◽  
Suneth C. Watthage ◽  
Zhaoning Song ◽  
...  

MRS Advances ◽  
2018 ◽  
Vol 3 (41) ◽  
pp. 2441-2447 ◽  
Author(s):  
Ebin Bastola ◽  
Kamala Khanal Subedi ◽  
Khagendra P. Bhandari ◽  
Randy J. Ellingson

ABSTRACTThe cadmium telluride (CdTe) photovoltaic (PV) comprise an efficient and cost-effective technology for harvesting solar energy. However, device efficiency remains limited in part by low-open circuit voltage (VOC) and fill factor (FF) due to inefficient transport of photo-generated charge carriers. Given the deep valence band of CdTe, the use of copper/gold (Cu/Au) as a back contact serves primarily to narrow the width of the inherent Schottky junction evident in CdTe solar cells (in our laboratory, Cu/Au has been used as a standard back contact). For efficient transport of carriers to and into the back contact, a hole transport layer (HTL) is desired with valence band edge comparable to that of CdTe (∼ -5.9 eV). Here, we report solution-processed nanocrystal (NCs) based thin films as HTLs in CdTe solar cells. The earth abundant materials we discuss include iron pyrite (FeS2), nickel-alloyed iron pyrite (NixFe1-xS2), zinc copper sulfide (ZnxCu1-xS) nanocomposites, and perovskite-based films. The FeS2 and NixFe1-xS2 NCs are synthesized by a hot-injection route, and thin films are fabricated by drop-casting, and spin-coating techniques using colloidal NCs. ZnxCu1-xS thin films are fabricated by chemical bath deposition. These NC-based thin films are applied and studied as the HTLs in CdTe devices. On using these materials, the device performance can be increased up to 10% compared to the standard Cu/Au back contact. Here, we discuss the benefits, challenges, and opportunities for these back contact materials in CdTe photovoltaics.


Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 358 ◽  
Author(s):  
Pao-Hsun Huang ◽  
Yeong-Her Wang ◽  
Chien-Wu Huang ◽  
Wen-Ray Chen ◽  
Chien-Jung Huang

In this paper, we demonstrate that the inverted CH3NH3PbI3 (perovskite) solar cells (PSCs) based on fullerene (C60) as an acceptor is fabricated by applying an improved poly(3,4-ethlyenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solution as a hole transport layer (HTL). The power conversion efficiency (PCE) of inverted PSCs is increased by 37.5% with stable values of open-circuit voltage (VOC) and fill factor (FF) because we enhance the viscosity of the PEDOT:PSS solution, indicating the perfect effect on both external quantum efficiency (EQE) and surface grain size. The characteristics of the PEDOT:PSS solution, which is being improved through facile methods of obtaining excellent growth of PEDOT:PSS thin film, have a considerable impact on carrier transport. A series of further processing fabrications, including reliable and feasible heating and stirring techniques before the formation of the PEDOT:PSS thin film via spin-coating, not only evaporate the excess moisture but also obviously increase the conductivity. The raised collection of holes become the reason for the enhanced PCE of 3.0%—therefore, the stable performance of FF and VOC are attributed to lower series resistance of devices and the high-quality film crystallization of perovskite and organic acceptors, respectively.


Solar Energy ◽  
2019 ◽  
Vol 190 ◽  
pp. 63-68
Author(s):  
Hanbing Ling ◽  
Rui Zhang ◽  
Xiaoqin Ye ◽  
Zhiyue Wen ◽  
Jiangbin Xia ◽  
...  

2017 ◽  
Vol 5 (6) ◽  
pp. 2920-2928 ◽  
Author(s):  
Jie Ge ◽  
Corey R. Grice ◽  
Yanfa Yan

p-Type wide-bandgap Cu2BaSnS4 holds promise for use as hole transport material in inverted perovskite CH3NH3PbI3 thin-film solar cells.


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