Growth, Characterization and Spectroscopic Investigations of InI Crystals for Optical and Radiation Detector Applications

1997 ◽  
Vol 487 ◽  
Author(s):  
K. C. Mandal ◽  
M. Klugerman ◽  
L. J. Cirignano ◽  
L. P. Moy ◽  
K. S. Shah ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Grown Crystal ◽  
Radiation Detector ◽  
X Ray Diffraction ◽  
X Ray ◽  
Growth Characterization ◽  
Vertical Bridgman ◽  
Nuclear Detectors ◽  
Crystal Wafer

AbstractSingle crystals of InI (Eg = 2.01 eV at 300K) have been grown by vertical Bridgman technique using zone refined (ZR) starting materials. The quality of the grown crystal has been evaluated by X-ray diffraction (XRD), Electron probe microanalysis (EPMA) and Photoelectron spectroscopy (XPS). Chemically etched crystal wafer has been used to fabricate optical and nuclear detectors. The results are presented in this paper.

GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER

2013 ◽  
Vol 20 (02) ◽  
pp. 1350015 ◽  
Author(s):  
C. J. DONG ◽  
M. XU ◽  
W. LU ◽  
Q. Z. HUANG
Keyword(s):  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
Interface Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hexagonal Wurtzite Crystal Structure ◽  
Transmission Electron ◽  
Aln Buffer ◽  
Microelectronic Materials

InN film with an AlInN/AlN bilayer buffer was deposited on Si(111) substrate by radio frequency (RF) magnetron sputtering. X-ray diffraction and Raman spectroscopy measurements reveal that the InN film is of hexagonal wurtzite crystal structure with highly (0002) preferred orientation. An Al0.24In0.76N interface layer of about ~50 nm was confirmed by transmission electron microscopy (TEM) and further analyzed by X-ray photoelectron spectroscopy (XPS). The quality of this film is remarkably better than InN films grown directly on Si substrate or with only an AlN buffer, due to the effective accommodation of mismatch between the film and substrate. Our results will be very useful in the fabrication of applicable nitride microelectronic materials.

The Effect of Oxygen-Rich Condition on Properties of ZnO: In Films by Sputtering

2013 ◽  
Vol 634-638 ◽  
pp. 2512-2517
Author(s):  
Hui Li ◽  
Hai Tao Feng ◽  
Fang Hui Zhang ◽  
Yun Liu ◽  
Er Qing Xie
Keyword(s):  
Photoelectron Spectroscopy ◽  
Persistent Photoconductivity ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Current Voltage ◽  
Rich Condition ◽  
Dc Reactive Magnetron Sputtering ◽  
Effect Of Oxygen

Indium doped zinc oxide (ZnO:In) films were prepared in oxygen-rich condition by direct current(DC) reactive magnetron sputtering. The X-ray diffraction(XRD) pattern presented that the crystal quality of ZnO:In films was improved by the introduction of nitrogen into ambience, meanwhile the element constituent was investigated by X-Ray photoelectron spectroscopy(XPS). The photoluminescence(PL) spectra showed the visible emission was originated from two different defects. The current-voltage characteristic and persistent photoconductivity(PPC) phenomena were also explained, when the oxygen vacancies(VO) may act trap centers in persistent photoconductivity.

Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary Solution

2005 ◽  
Vol 483-485 ◽  
pp. 13-16 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Y. Ueda ◽  
S. Naga ◽  
Y. Ito ◽  
...  
Keyword(s):  
Grown Crystal ◽  
Seed Crystal ◽  
Solution Growth ◽  
Crystalline Quality ◽  
Ternary Solution ◽  
Bulk Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Koh Etching

The growth of 6H-SiC crystal from Si-Ti-C ternary solution was conducted under the temperature gradient and the crystalline quality evaluations of the grown crystals were carried out. 6H-SiC(0001) on-axis pvt-grown crystal was used as a seed crystal. Micropipes in the seed crystal were terminated during the solution growth and 28mm􀊷28mm self-standing micropipe-free SiC crystals were obtained. The quality of the grown crystals was investigated by SIMS, high-resolution x-ray diffraction and molten KOH etching. The content of residual impurities in the SiC were very low. The X-ray 􀐢-rocking curves of the solution grown SiC showed single peak with high peak intensity ,while that of the seed crystal showed several peaks due to the misoriented domains. Moreover, it was found that the number of etch-pit in the grown crystal is much less than that in the seed crystal and it decreases with the increase of the growth thickness. These results indicate that the crystalline quality of grown crystal was significantly improved during the solution growth.

scholarly journals Synthesis and Characterizations of 2D Platinum Diselenide

2020 ◽  
Vol 2 (1) ◽  
pp. 22
Author(s):  
Irnik Dionisiev ◽  
Vera Marinova ◽  
Krastyo Buchkov ◽  
Hristosko Dikov ◽  
Ivalina Avramova ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Strong Dependence ◽  
Chemical Vapor ◽  
Thickness Variation ◽  
Chemical Compositions ◽  
X Ray Diffraction ◽  
X Ray

Platinum diselenide (PtSe2), which belongs to the transition metals dichalcogenide (TMDCs) class of 2D materials, is characterized with a transition from semimetal to semiconductor with a thickness variation from bulk to monolayer and found in versatile applications especially in sensors and mid-infrared detectors. In this study we report the large-scale synthesis of PtSe2 layers by thermally assisted selenization of pre-deposited platinum films in a horizontal quartz-tube Chemical Vapor Deposition (CVD) reactor. Raman spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) are used for characterization of the obtained 2D PtSe2. It is observed that the Raman spectra of PtSe2 show strong dependence on the thickness (Pt deposition time). XPS analysis was applied to examine the chemical compositions in order to assess the quality of the synthesized PtSe2 films. All the studied properties reveal great potential to obtain continuous layers with a controlled thickness and composition and further potential for integration in functional heterostructures for future nanoelectronic and optoelectronic devices.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

scholarly journals α-Cellulose Fibers of Paper-Waste Origin Surface-Modified with Fe3O4 and Thiolated-Chitosan for Efficacious Immobilization of Laccase

Polymers ◽  
2021 ◽  
Vol 13 (4) ◽  
pp. 581
Author(s):  
Gajanan S. Ghodake ◽  
Surendra K. Shinde ◽  
Ganesh D. Saratale ◽  
Rijuta G. Saratale ◽  
Min Kim ◽  
...  
Keyword(s):  
Enzyme Immobilization ◽  
Photoelectron Spectroscopy ◽  
Cellulose Fibers ◽  
Relative Activity ◽  
Significant Activity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Laccase Immobilization ◽  
Surface Modified

The utilization of waste-paper-biomass for extraction of important α-cellulose biopolymer, and modification of extracted α-cellulose for application in enzyme immobilization can be extremely vital for green circular bio-economy. Thus, in this study, α-cellulose fibers were super-magnetized (Fe3O4), grafted with chitosan (CTNs), and thiol (-SH) modified for laccase immobilization. The developed material was characterized by high-resolution transmission electron microscopy (HR-TEM), HR-TEM energy dispersive X-ray spectroscopy (HR-TEM-EDS), X-ray diffraction (XRD), vibrating sample magnetometer (VSM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FT-IR) analyses. Laccase immobilized on α-Cellulose-Fe3O4-CTNs (α-Cellulose-Fe3O4-CTNs-Laccase) gave significant activity recovery (99.16%) and laccase loading potential (169.36 mg/g). The α-Cellulose-Fe3O4-CTNs-Laccase displayed excellent stabilities for temperature, pH, and storage time. The α-Cellulose-Fe3O4-CTNs-Laccase applied in repeated cycles shown remarkable consistency of activity retention for 10 cycles. After the 10th cycle, α-Cellulose-Fe3O4-CTNs possessed 80.65% relative activity. Furthermore, α-Cellulose-Fe3O4-CTNs-Laccase shown excellent degradation of pharmaceutical contaminant sulfamethoxazole (SMX). The SMX degradation by α-Cellulose-Fe3O4-CTNs-Laccase was found optimum at incubation time (20 h), pH (3), temperatures (30 °C), and shaking conditions (200 rpm). Finally, α-Cellulose-Fe3O4-CTNs-Laccase gave repeated degradation of SMX. Thus, this study presents a novel, waste-derived, highly capable, and super-magnetic nanocomposite for enzyme immobilization applications.

scholarly journals Photocatalytic Reduction of CO2 to Methanol Using a Copper-Zirconia Imidazolate Framework

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 346
Author(s):  
Sonam Goyal ◽  
Maizatul Shima Shaharun ◽  
Ganaga Suriya Jayabal ◽  
Chong Fai Kait ◽  
Bawadi Abdullah ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Catalyst Support ◽  
Oxidation Potential ◽  
Molar Ratio ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molar Ratios ◽  
Optimum Parameters ◽  
Reduction Of Co2 ◽  
Enhanced Yield

A set of novel photocatalysts, i.e., copper-zirconia imidazolate (CuZrIm) frameworks, were synthesized using different zirconia molar ratios (i.e., 0.5, 1, and 1.5 mmol). The photoreduction process of CO2 to methanol in a continuous-flow stirred photoreactor at pressure and temperature of 1 atm and 25 °C, respectively, was studied. The physicochemical properties of the synthesized catalysts were studied using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL) spectroscopy. The highest methanol activity of 818.59 µmol/L.g was recorded when the CuZrIm1 catalyst with Cu/Zr/Im/NH4OH molar ratio of 2:1:4:2 (mmol/mmol/mmol/M) was employed. The enhanced yield is attributed to the presence of Cu2+ oxidation state and the uniformly dispersed active metals. The response surface methodology (RSM) was used to optimize the reaction parameters. The predicted results agreed well with the experimental ones with the correlation coefficient (R2) of 0.99. The optimization results showed that the highest methanol activity of 1054 µmol/L.g was recorded when the optimum parameters were employed, i.e., stirring rate (540 rpm), intensity of light (275 W/m2) and photocatalyst loading (1.3 g/L). The redox potential value for the CuZrIm1 shows that the reduction potential is −1.70 V and the oxidation potential is +1.28 V for the photoreduction of CO2 to methanol. The current work has established the potential utilization of the imidazolate framework as catalyst support for the photoreduction of CO2 to methanol.

scholarly journals Photoconductivity of the Single Crystals Pb4Ga4GeS12 and Pb4Ga4GeSe12

Proceedings ◽  
2020 ◽  
Vol 62 (1) ◽  
pp. 4
Author(s):  
Hadj Bellagra ◽  
Oksana Nyhmatullina ◽  
Yuri Kogut ◽  
Halyna Myronchuk ◽  
Lyudmyla Piskach
Keyword(s):  
Ternary Systems ◽  
Semiconductor Materials ◽  
Tetragonal Symmetry ◽  
Bandgap Energy ◽  
Experimental Measurements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vertical Bridgman ◽  
Symmetry Space ◽  
Symmetry Space Group

Quaternary semiconductor materials of the Pb4Ga4GeS(Se)12 composition have attracted the attention of researchers due to their possible use as active elements of optoelectronics and nonlinear optics. The Pb4Ga4GeS(Se)12 phases belong to the solid solution ranges of the Pb3Ga2GeS(Se)8 compounds which form in the quasi-ternary systems PbS(Se)−Ga2S(Se)3−GeS(Se)2 at the cross of the PbGa2S(Se)4−Pb2GeS(Se)4 and PbS(Se)−PbGa2GeS(Se)6 sections. The quaternary sulfide melts congruently at 943 K. The crystallization of the Pb4Ga4GeSe12 phase is associated with the ternary peritectic process Lp + PbSe ↔ PbGa2S4 + Pb3Ga2GeSe8 at 868 K. For the single crystal studies, Pb4Ga4GeS(Se)12 were pre-synthesized by co-melting high-purity elements. The X-ray diffraction results confirm that these compounds possess non-centrosymmetric crystal structure (tetragonal symmetry, space group P–421c). The crystals were grown by the vertical Bridgman method in a two-zone furnace. The starting composition was stoichiometric for Pb4Ga4GeS12, and the solution-melt method was used for the selenide Pb4Ga4GeSe12. The obtained value of the bandgap energy for the Pb4Ga4GeS12 and Pb4Ga4GeSe12 crystals is 1.86 and 2.28 eV, respectively. Experimental measurements of the spectral distribution of photoconductivity for the Pb4Ga4GeS12 and Pb4Ga4GeSe12 crystals exhibit the presence of two spectral maxima. The first lies in the region of 570 (2.17 eV) and 680 nm (1.82 eV), respectively, and matches the optical bandgap estimates well. The locations of the admixture maxima at about 1030 (1.20 eV) and 1340 nm (0.92 eV), respectively, agree satisfactorily with the calculated energy positions of the defects vs. and VSe.

scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

scholarly journals Optical, XPS and XRD Studies of Semiconducting Copper Sulfide Layers on a Polyamide Film

2009 ◽  
Vol 2009 ◽  
pp. 1-8 ◽  
Author(s):  
Valentina Krylova ◽  
Mindaugas Andrulevičius
Keyword(s):  
Photoelectron Spectroscopy ◽  
Copper Sulfide ◽  
Diffusion Method ◽  
X Ray Diffraction ◽  
Xps Spectra ◽  
X Ray ◽  
Xrd Studies ◽  
Polyamide Film ◽  
Indirect Band Gap ◽  
Xrd Method

Copper sulfide layers were formed on polyamide PA 6 surface using the sorption-diffusion method. Polymer samples were immersed for 4 and 5 h in 0.15 mol⋅  solutions and acidified with HCl (0.1 mol⋅) at . After washing and drying, the samples were treated with Cu(I) salt solution. The samples were studied by UV/VIS, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) methods. All methods confirmed that on the surface of the polyamide film a layer of copper sulfide was formed. The copper sulfide layers are indirect band-gap semiconductors. The values of are 1.25 and 1.3 eV for 4 h and 5 h sulfured PA 6 respectively. Copper XPS spectra analyses showed Cu(I) bonds only in deeper layers of the formed film, while in sulfur XPS S 2p spectra dominating sulfide bonds were found after cleaning the surface with ions. It has been established by the XRD method that, beside , the layer contains as well. For PA 6 initially sulfured 4 h, grain size forchalcocite, , was  nm and fordjurleite, , it was 54.17 nm. The sheet resistance of the obtained layer varies from 6300 to 102 .

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