Porous Silicon as a Sacrificial Material for Micromachining of Silicon Optical Platforms

1997 ◽  
Vol 486 ◽  
Author(s):  
M. Guendouz ◽  
P. Joubert ◽  
N. Pedrono ◽  
J. Le Rouzic
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Sacrificial Layer ◽  
Porous Si ◽  
Fiber Alignment ◽  
Patterned Substrate ◽  
Anodization Time ◽  
Experimental Parameters ◽  
Heavily Doped ◽  
Optical Fiber Alignment

AbstractPorous silicon obtained by the anodization of heavily doped n+-type silicon wafers was used as a sacrificial layer to micromachine silicon platforms. The effect of experimental parameters, such as the nature of the masking layer, current density and anodization time, on the geometry of the porous Si formed in patterned substrate is shown. Advantages of this method on the orientation-dependent chemical etching (ODCE), which is classically used for optical fiber alignment, are discussed.

Metastability of Luminescent Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
S. Mtyazaki ◽  
K. Sakamoto ◽  
K. Shiba ◽  
M. Hirose
Keyword(s):  
Porous Silicon ◽  
Luminescence Intensity ◽  
Chemical Etching ◽  
Anomalous Temperature Dependence ◽  
Porous Si ◽  
Anomalous Temperature ◽  
Type C ◽  
P Type ◽  
Quenching Phenomenon ◽  
Subsequent Chemical

ABSTRACTPhotoluminescence from l–3μm thick porous Si layers prepared by anodization of p-type c-Si wafers and subsequent chemical etching exhibits an anomalous temperature dependence and light-induced degradation. The luminescence intensity is almost quenched at temperatures below 30K and recovered by laser irradiation at 48K. This quenching phenomenon is not observed for PS thicker than 10μm. The luminescence fatigue is partially recovered by annealing at 150°C for 5min during which no further oxidation takes place. These observations are interpreted in terms of the structural metastability of hydrogen-terminated porous Si.

Optimization Of Porous Silicon Reflectance For Solar Cell Applications

1996 ◽  
Vol 426 ◽  
Author(s):  
A. X. Coles ◽  
R. A. Gerhardt ◽  
A. Rohatgi
Keyword(s):  
Porous Silicon ◽  
Antireflective Coating ◽  
Porous Si ◽  
Time Intervals ◽  
Surface Conditions ◽  
Anodization Time ◽  
Float Zone ◽  
Current Densities ◽  
Potential Use ◽  
Over Time

AbstractThe potential use of porous silicon as an antireflective coating on solar cells has recently been recognized. This study investigates the effect of current density, anodization time, and surface conditions on the reflectance of porous silicon which was fabricated by anodizing (100) float zone single crystal Si wafers. The wafers were coated on one side with Al prior to anodization, and a HFbased solution was used as the electrolyte. Current densities of 5 – 100 mA/cm2 were used to anodize both polished and unpolished wafers over time intervals ranging from 2sec - 30 minutes. Reflectance properties were tested over the 400 - 1100 nm range, and minimum reflectances of 3 – 5% were achieved. The reflectance of the best porous Si sample normalized with respect to the sun's spectrum compares favorably with the reflectance of a double layer ZnS/ MgF2 with prior texturing.

Formation of Porous Silicon Layers on Insulating Substrate for Microbridge – Type Sensor Applications

2004 ◽  
Vol 828 ◽  
Author(s):  
Sergey Ya. Andrushin ◽  
Leonid A. Balagurov ◽  
Sue C. Bayliss ◽  
Galina V. Liberova ◽  
Elena A. Petrova ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Polycrystalline Silicon ◽  
Sacrificial Layer ◽  
Fabrication Process ◽  
Formation Processes ◽  
Sensor Applications ◽  
Heavily Doped ◽  
P Type

ABSTRACTFormation processes of porous silicon on insulating substrate were studied. It was demonstrated that both electrochemical and chemical formation methods allow to transform heavily doped p-type polycrystalline silicon into homogeneous porous silicon. Porous silicon was successfully used as sacrificial layer in the fabrication process of microbridge structures.

scholarly journals Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yijie Li ◽  
Nguyen Van Toan ◽  
Zhuqing Wang ◽  
Khairul Fadzli Bin Samat ◽  
Takahito Ono
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Contact Resistance ◽  
Power Factor ◽  
Chemical Etching ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates ◽  
Output Performance ◽  
Metal Assisted Chemical Etching

AbstractPorous silicon (Si) is a low thermal conductivity material, which has high potential for thermoelectric devices. However, low output performance of porous Si hinders the development of thermoelectric performance due to low electrical conductivity. The large contact resistance from nonlinear contact between porous Si and metal is one reason for the reduction of electrical conductivity. In this paper, p- and n-type porous Si were formed on Si substrate by metal-assisted chemical etching. To decrease contact resistance, p- and n-type spin on dopants are employed to dope an impurity element into p- and n-type porous Si surface, respectively. Compared to the Si substrate with undoped porous samples, ohmic contact can be obtained, and the electrical conductivity of doped p- and n-type porous Si can be improved to 1160 and 1390 S/m, respectively. Compared with the Si substrate, the special contact resistances for the doped p- and n-type porous Si layer decreases to 1.35 and 1.16 mΩ/cm2, respectively, by increasing the carrier concentration. However, the increase of the carrier concentration induces the decline of the Seebeck coefficient for p- and n-type Si substrates with doped porous Si samples to 491 and 480 μV/K, respectively. Power factor is related to the Seebeck coefficient and electrical conductivity of thermoelectric material, which is one vital factor that evaluates its output performance. Therefore, even though the Seebeck coefficient values of Si substrates with doped porous Si samples decrease, the doped porous Si layer can improve the power factor compared to undoped samples due to the enhancement of electrical conductivity, which facilitates its development for thermoelectric application.

Ammonia detection using optical reflectance from porous silicon formed by metal-assisted chemical etching

2013 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentyn Smyntyna ◽  
Mykolai Pavlenko ◽  
Olga Kanevska ◽  
Yuliia Kirik ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Optical Reflectance ◽  
Ammonia Detection ◽  
Metal Assisted Chemical Etching

scholarly journals Replication of self-centering optical fiber alignment structures using hot embossing

2016 ◽  
Author(s):  
Evert Ebraert ◽  
Markus Wissmann ◽  
Nicole Barié ◽  
Markus Guttmann ◽  
Marc Schneider ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Hot Embossing ◽  
Fiber Alignment ◽  
Optical Fiber Alignment

Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide

2017 ◽  
Vol 5 (35) ◽  
pp. 9005-9011 ◽  
Author(s):  
Ju Hwan Kim ◽  
Dong Hee Shin ◽  
Ha Seung Lee ◽  
Chan Wook Jang ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Porous Silicon ◽  
Au Nanoparticles ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Co Doping ◽  
Si Solar Cells ◽  
First Time

The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance the performance of graphene/porous Si solar cells.

Highly Porous Silicon Nanowires Made with Solvent-Mediated Wet Chemical Etching and Their Thermoelectric Applications

2017 ◽  
Vol 2 (33) ◽  
pp. 10865-10870 ◽  
Author(s):  
Chien-Hsin Tang ◽  
Wen-Jin Li ◽  
Chia-Hsiang Hung ◽  
Po-Hsuan Hsiao ◽  
Chia-Yun Chen
Keyword(s):  
Porous Silicon ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Porous Silicon Nanowires ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Highly Porous

scholarly journals High precision optical fiber alignment using tube laser bending

2015 ◽  
Vol 86 (1-4) ◽  
pp. 953-961 ◽  
Author(s):  
K. G. P. Folkersma ◽  
G. R. B. E. Römer ◽  
D. M. Brouwer ◽  
J. L. Herder
Keyword(s):  
Optical Fiber ◽  
High Precision ◽  
Laser Bending ◽  
Fiber Alignment ◽  
Optical Fiber Alignment
Sign in / Sign up

Export Citation Format

Share Document