scholarly journals Lattice Sites and Stability of Implanted Er in FZ and CZ Si

1997 ◽  
Vol 486 ◽  
Author(s):  
U. Wahl ◽  
J. G. Correia ◽  
G. Langouche ◽  
A. Vantomme ◽  
Isolde collaboration

AbstractWe report on the lattice location of 167Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T) sites directly following 60 keV room temperature implantation at doses of 6× 1012 cm−2 For higher doses, the as-implanted near-T fractions of Er visible by emission channeling are smaller, due to the beginning of amorphization. Following the recovery of implantation damage at 600°C, more than 70% of Er is found on near-T sites in both FZ and CZ Si. In FZ Si, Er exhibits a remarkable thermal stability and only prolonged annealing for several hours reduces the near-T fraction. On the other hand, annealing of CZ Si at 900°C for more than 10 minutes results in the majority of Er probes in sites of very low symmetry or disordered surroundings.

2007 ◽  
Vol 561-565 ◽  
pp. 2399-2402
Author(s):  
Yoshihisa Kaneko ◽  
H. Sakakibara ◽  
Satoshi Hashimoto

Co/Cu and Ni/Cu multilayers fabricated by electroplating technique were annealed at various temperatures in order to investigate thermal stability of multilayered structures. Vickers hardness tests on the annealed Co/Cu and Ni/Cu multilayers were conducted at room temperature. It was recognized that after the annealing at 1023K the Co/Cu multilayer still maintained the hardness of as-deposited state. On the other hand, the hardness of Ni/Cu multilayer was almost identical to copper substrate after the annealing at 903K.


2012 ◽  
Vol 706-709 ◽  
pp. 2693-2698 ◽  
Author(s):  
A. Arlazarov ◽  
M. Gouné ◽  
O. Bouaziz ◽  
A. Hazotte ◽  
F. Kegel

The study about the influence of intercritical annealing time on a cold rolled 0.1%C – 4.6%Mn (wt.%) steel was performed. The tensile tests show an interesting balance between strength and ductility especially after 7 hours annealing at 670°C. A part of this good result can be explained by the presence of rather high fraction of metastable austenite at room temperature. On the other hand a very complex microstructure combining lath-like and polygonal features was observed making the interpretation complicated.


2011 ◽  
Vol 465 ◽  
pp. 215-218 ◽  
Author(s):  
Jenő Gubicza ◽  
E. Khosravi ◽  
Vladimir V. Stolyarov

Ultrafine-grained (UFG) CP titanium (Grade-4) sample was processed by electroplastic rolling (EPR) at room temperature which was compared to a specimen processed by conventional cold rolling (CR). EPR was performed using pulsed unidirectional current with a current density of 95 A/mm2, pulse duration of 10-4 s and frequency of 1000 Hz. It was found that the sample processed by EPR has slightly higher dislocation density and smaller crystallite size than for the CR specimen resulting in a higher tensile strength for the former specimen. In the case of EPR sample, the relative fraction of <c+a> dislocations is lower than for CR specimen. During annealing the relative fraction of <c+a> dislocations decreased for both samples which can be explained by the fact that the <c+a> dislocations have larger Burgers-vector and consequently higher formation energy than the other two types.


2000 ◽  
Vol 55 (1-2) ◽  
pp. 348-352 ◽  
Author(s):  
Hirotsugu Masui ◽  
Takahiro Ueda ◽  
Keisuke Miyakubo ◽  
Taro Eguchi ◽  
Nobuo Nakamura

The structure of NASICON-type compounds, Na1+xScxTi2-x(PO4)3 (O ≤ x ≤ 2), and the dynamics of Na+ have been investigated by 23Na NMR spectroscopy. It was found that the 23Na 1D and 2D MQMAS spectra depend on the Na concentration, suggesting strongly that the Na+ ions are distributed between two crystallographically nonequivalent sites, one is a special position with axial symmetry, and the other a position of low symmetry. The chemical exchange between these different sites in the crystal takes place at room temperature, which may cause the high Na ion conduction of this material


2018 ◽  
Vol 34 (1) ◽  
pp. 63
Author(s):  
Agnieszka Dziewulska-Kułaczkowska ◽  
Wieslawa Ferenc

The complexes of silver(I) with 2,3-, 2,4-, 2,6-, 3,4-, 3,5-dimethoxy-, and 2,3,4- and 3,4,5-trimethoxybenzoic acid anions have been synthesized and characterized by elemental analysis, IR spectroscopy, thermogravimetric and X-ray studies. Their solubility in water has been also determined at 293K. All analysed complexes were found to be crystalline, anhydrous compounds with low symmetry. The carboxylate groups act as bidentate or monodentate ligands. The thermal stability of compounds has been examined in air in temperature range of 293-1173K. The analysed complexes were found to be stable at room temperature and their solubilities in water at 293K to be in the order of 10-4 mol.dm-3.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Rajender Boddula ◽  
Palaniappan Srinivasan

Carbazole was oxidized by benzoyl peroxide in presence of p-toluenesulfonic acid to polycarbazole salt at room temperature for the first time. Polycarbazole salts were synthesized via solution and emulsion polymerization pathways. Polycarbazole bases were prepared by dedoping from polycarbazole salts. Formation of polycarbazoles was confirmed from infrared, electronic absorption and EDAX spectra. Polycarbazole salt was obtained in amorphous nature in semiconductor range (10−5 S/cm), which was found to be soluble in less and high polar solvents. Polycarbazole salt prepared by emulsion polymerization pathway showed mixture of shapes with microrod, sphere, and pores, whereas its corresponding base showed only micropores structure. On the other hand, polycarbazole salt and its corresponding base prepared by solution polymerization pathway showed flake-like morphology. Higher thermal stability was obtained for polycarbazole salt prepared by emulsion polymerization pathway than that of the salt prepared by solution polymerization pathway.


1996 ◽  
Vol 442 ◽  
Author(s):  
H. Hofsäss ◽  
M. Dalmer ◽  
M. Restle ◽  
C. Ronning ◽  
K. Bharuth-Ram ◽  
...  

AbstractWe have studied the lattice sites of P and As impurities in natural IIa diamond after room temperature ion implantation at very low doses of 1011 P/cm2 and ≤ 1013 As/cm2 and subsequent annealing. We implanted radioactive 33P and 73Se/73As probe atoms and used the sensitive emission channeling technique to determine the impurity lattice sites. In this technique the channeling effects of emitted decay electrons are measured for different crystal axes. By comparison with calculated electron emission distributions the fractions of emitter atoms on different lattice sites can be quantitatively determined. After annealing of the implanted samples above 900°C we find high substitutional fractions of 70 ± 10 % for 33P and 55 ± 5 % for 73As.


1997 ◽  
Vol 468 ◽  
Author(s):  
C. Running ◽  
M. Dalmer ◽  
M. Deicher ◽  
M. Restle ◽  
M. D. Bremser ◽  
...  

ABSTRACTSingle crystalline GaN-layers were implanted with radioactive 111In ions. The lattice location of the ions and the recovery of the implantation induced damage was studied using the emission channeling technique and perturbed-γγ-angular-correlation spectroscopy as a function of the annealing temperature. We find the majority of indium atoms on substitutional sites even directly after room temperature implantation, but within a heavily disturbed surrounding. During isochronal annealing treatments in vacuum, a gradual recovery of the implantation damage takes place between 873 K and 1173 K. After 1173 K annealing about 50 % of the In atoms occupy substitutional lattice sites with defect free surroundings.


Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.


Alloy Digest ◽  
1960 ◽  
Vol 9 (7) ◽  

Abstract HAYNES STELLITE 98M2 Alloy is a cobalt-base alloy having higher compressive strength and higher hardness than all the other cobalt-base alloys at room temperature and in the red heat range. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness. It also includes information on heat treating, machining, and joining. Filing Code: Co-22. Producer or source: Haynes Stellite Company.


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