Recovery of Structural Defects in GaN After Heavy Ion Implantation

1997 ◽  
Vol 468 ◽  
Author(s):  
C. Running ◽  
M. Dalmer ◽  
M. Deicher ◽  
M. Restle ◽  
M. D. Bremser ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Angular Correlation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Heavy Ion ◽  
Correlation Spectroscopy ◽  
Lattice Location ◽  
Structural Defects ◽  
Implantation Damage ◽  
Emission Channeling

ABSTRACTSingle crystalline GaN-layers were implanted with radioactive 111In ions. The lattice location of the ions and the recovery of the implantation induced damage was studied using the emission channeling technique and perturbed-γγ-angular-correlation spectroscopy as a function of the annealing temperature. We find the majority of indium atoms on substitutional sites even directly after room temperature implantation, but within a heavily disturbed surrounding. During isochronal annealing treatments in vacuum, a gradual recovery of the implantation damage takes place between 873 K and 1173 K. After 1173 K annealing about 50 % of the In atoms occupy substitutional lattice sites with defect free surroundings.

Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 343-346 ◽  
Author(s):  
M. Obernhofer ◽  
Michael Krieger ◽  
Frank Schmid ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Hall Effect ◽  
Structural Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Electrical Activation ◽  
Implantation Damage ◽  
Aluminum Ions

Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.

Characterization of Ion Implantation Damage in Capless Annealed GaAs

1983 ◽  
Vol 27 ◽  
Author(s):  
H. Kanber ◽  
M. Feng ◽  
J. M. Whelan
Keyword(s):  
Ion Implantation ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Buffer Layers ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Damage Characteristics ◽  
Implantation Damage ◽  
Implantation Process

ABSTRACTArsenic and argon implantation damage is characterized by Rutherford backscattering in GaAs undoped VPE buffer layers grown on Cr-O doped semi-insulating substrates and capless annealed in a H2 −As4 atmosphere provided by AsH3. The damage detected in the RBS channeled spectra varies as a function of the ion mass, the implant depth and the annealing temperature of the stress-free controlled atmosphere technique. This damage is discussed in terms of the stoichiometric disturbances introduced by the implantation process. The as-implanted and annealed damage characteristics of the Ar and As implants are correlated to the electrical activation characteristics of Si and Se implants in GaAs, respectively.

Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
M. Dalmer ◽  
M. Restle ◽  
A. Stötzler ◽  
U. Vetter ◽  
H. Hofsäss ◽  
...  
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Room Temperature ◽  
Lattice Location ◽  
Isochronal Annealing ◽  
Line Intensities ◽  
Order Of Magnitude ◽  
Photoluminescence Studies ◽  
Luminescence Behavior ◽  
Emission Channeling

AbstractSingle crystalline GaN-layers were implanted with radioactive 167Tm and 169yb ions, and their lattice sites were determined using the emission channeling technique. After the decay of 167Tm to 167Er, photoluminescence studies were performed. Upon room temperature implantation, rare earth atoms immediately occupy relaxed substitutional sites with an average relaxation of about 0.025 nm. Isochronal annealing treatments up to 800 °C and co-implantation of oxygen to a dose an order of magnitude greater than that of the Tm or Yb do not influence the rare earth lattice sites. A variety of different rare earth related luminescence lines are observed, and co-implantation of oxygen strongly changes the line intensities.

Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Aditya Agarwal ◽  
S. Koveshnikov ◽  
K. Christensen ◽  
G. A. Rozgonyi
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Structural Defects ◽  
Extended Defects ◽  
Device Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Current Voltage ◽  
Transient Spectroscopy ◽  
Si Ion Implantation

AbstractThe electrical properties of residual MeV ion implantation damage in Si after annealing from 600 to 1100°C for 1 hour have been investigated using Deep Level Transient Spectroscopy, Capaciatance-Voltage, and Current-Voltage measurements. These data have been correlated with structural defects imaged by Transmission Electron Microscopy. It is shown that at least 4 deep levels are associated with the buried layer of extended defects after annealing at 800, 900, 1000 and 1100°C. Additionally, for the wafer annealed at 800°C at least 5 more deep level centers are present in the device layer above the buried defects.

Lattice Location and Cathodoluminescence Studies of Ytterbium/Thulium Implanted 2H-Aluminium Nitride

2002 ◽  
Vol 743 ◽  
Author(s):  
U. Vetter ◽  
M. F. Reid ◽  
H. Hofsäss ◽  
C. Ronning ◽  
J. Zenneck ◽  
...  
Keyword(s):  
Room Temperature ◽  
Lattice Site ◽  
Electron Transition ◽  
Lattice Location ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Annealing Temperatures ◽  
Visible Luminescence ◽  
On Line ◽  
Emission Channeling

ABSTRACTLattice location studies of radioactive 169Yb ions, implanted at an energy of 60 keV into 2H-AlN at the on-line isotope separator ISOLDE at CERN, were performed using the emission channeling technique. The measurements, which yield a substitutional Al lattice site for the implanted ions, were recorded for annealing temperatures ranging from 293 K to 1273 K. After complete decay of 169Yb to 169Tm cathodoluminescence measurements were performed in the range 12 K – 300 K. The samples show a strong visible luminescence at 460 - 470 nm at room temperature, which is attributed to the 1D2−3F4 intra-4f electron transition of Tm3+. At 12 K the luminescence is dominated by transitions starting from the 1H6 multiplet. Time resolved as well as temperature dependent cathodoluminescence measurements are presented and discussed.The lattice location as well as the time resolved cathodoluminescence measurements suggest that there is only one pronounced site of the implanted ions in the AlN lattice and that this is the substitutional aluminium site.

scholarly journals Intrinsic color centers in 4H-silicon carbide formed by heavy ion implantation and annealing

2021 ◽  
Author(s):  
Takuma Kobayashi ◽  
Maximilian Rühl ◽  
Johannes Lehmeyer ◽  
Leonard K.S. Zimmermann ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Vacancy Concentration ◽  
Heavy Ion ◽  
Intrinsic Defect ◽  
High Dose ◽  
Fully Integrated ◽  
Implantation Damage ◽  
Quantum Technology ◽  
Luminescent Centers

Abstract We study the generation and transformation of intrinsic luminescent centers in 4H-polytype of silicon carbide via heavy ion implantation and subsequent annealing. Defects induced by the implantation of germanium (Ge) or tin (Sn) have been characterized by photoluminescence (PL) spectra recorded at cryogenic temperatures. We find three predominant but as-yet-unidentified PL signatures (labeled as DI1–3) at the wavelength of 1002.8 nm (DI1), 1004.7 nm (DI2), and 1006.1 nm (DI3) after high dose implantation (> 4 × 1013 cm-2) and high temperature annealing (> 1700○C). The fact that the DI lines co-occur and are energetically close together suggest that they originate from the same defect. Regardless of the implanted ion (Ge or Sn), a sharp increase in their PL intensity is observed when the implantation damage becomes high (vacancy concentration > 1022 cm-3), indicating that the lines stem from an intrinsic defect caused by the damage. By tracking the PL signals after stepwise annealing, we examine how the overall intrinsic defects behave in the temperature range of 500 – 1800○C; the silicon vacancies formed by the implantation transform into either divacancies or antisite-vacancy pairs with annealing at about 1000○C. These spectra signatures are strongly reduced at 1200○C where the so-called TS defects are maximized in luminescence. As a final stage, the DI defects, which are most likely formed of antisites and vacancies, emerge at 1700○C. Our results provide a knowledge on how to incorporate and manipulate the intrinsic luminescent centers in SiC with ion implantation and annealing, paving the way for fully integrated quantum technology employing SiC.

Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC

2003 ◽  
Vol 433-436 ◽  
pp. 653-656 ◽  
Author(s):  
Servane Blanqué ◽  
R. Pérez ◽  
Marcin Zielinski ◽  
Julien Pernot ◽  
Narcis Mestres ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantitative Evaluation ◽  
Room Temperature ◽  
Implantation Damage

Tem Observation of the Damages in Heavily Ion-Implanted Fine Si Columns

1994 ◽  
Vol 354 ◽  
Author(s):  
S. Shingubara ◽  
H. Sukesako ◽  
T. Kawasaki ◽  
K. Inoue ◽  
Y. Matusi ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Electron Beam Lithography ◽  
Room Temperature ◽  
Heavy Ion ◽  
Single Crystal Substrate ◽  
Lattice Image ◽  
Quantum Size ◽  
Crystal Substrate ◽  
Heavy Doping

AbstractSi nanometer structures are promising for exhibiting the quantum size effect at temperatures even as high as a room temperature. The present work investigates by TEM the damages induced by a heavy ion-implantation to the fine Si columns, aim of fabrication of 1-D tunneling PN diode in future. Si columns are fabricated by electron beam lithography and reactive ion etching, followed by thinning by thermal oxidation of Si . Ultra fine Si column with a diameter of 8 nm are successfully formed. TEM lattice image observations for fine Si columns, which are subject to ion-implantation and subsequent annealing, are carried out. In the case of heavy doping of As, as well as BF2, as-doped structure is amorphous, and recrystallization is observed after annealing at 1000 °C for 30 min. Typical damages such as dislocations which are parallel to the {111} planes and Si micro-crystals which are differently oriented from the Si single crystal substrate are observed for Si columns with diameters larger than 40nm. However, it should be noted that no damage is observed for fine Si columns with diameters less than 20nm. It is suggested that defects are diffused out to the surface or the Si/SiO2 interface for ultra fine Si columns during annealing.

scholarly journals Lattice Sites and Stability of Implanted Er in FZ and CZ Si

1997 ◽  
Vol 486 ◽  
Author(s):  
U. Wahl ◽  
J. G. Correia ◽  
G. Langouche ◽  
A. Vantomme ◽  
Isolde collaboration
Keyword(s):  
Thermal Stability ◽  
Electron Emission ◽  
Room Temperature ◽  
The Other ◽  
Implantation Damage ◽  
Prolonged Annealing ◽  
High Fraction ◽  
Higher Doses ◽  
Low Symmetry ◽  
Emission Channeling

AbstractWe report on the lattice location of 167Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T) sites directly following 60 keV room temperature implantation at doses of 6× 1012 cm−2 For higher doses, the as-implanted near-T fractions of Er visible by emission channeling are smaller, due to the beginning of amorphization. Following the recovery of implantation damage at 600°C, more than 70% of Er is found on near-T sites in both FZ and CZ Si. In FZ Si, Er exhibits a remarkable thermal stability and only prolonged annealing for several hours reduces the near-T fraction. On the other hand, annealing of CZ Si at 900°C for more than 10 minutes results in the majority of Er probes in sites of very low symmetry or disordered surroundings.

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