On the Moss-Burstein Shift In Quantum Confined Optoelectronic Ternary and Quaternary Materials

1997 ◽  
Vol 484 ◽  
Author(s):  
Vamakhya P. Ghatak ◽  
P. K. Bose ◽  
Gautam Majumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wires ◽  
Dispersion Law ◽  
Heavy Doping ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched

AbstractIn this paper we have studied the Burstein-Moss shift in quantum wires and dots of ternary and quaternary materials on the basis of a newly formulated electron dispersion law which occurs as a consequence of heavy doping. It is found taking Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical values of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theroretical analysis is in agreement with the experimental datas as given elsewhere.

On thon the Photoemission from Quantum Confined Strained III–V Systems

1995 ◽  
Vol 379 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. Nag ◽  
G. Mazumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Dispersion Law ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

On the Moss-Burstein Shift in Quantum Confined Optoelectronic Ternary and Quaternary Materials

1995 ◽  
Vol 417 ◽  
Author(s):  
Kamakhya P. Ghatajc ◽  
B. Nag ◽  
S. N. Biswas
Keyword(s):  
Quantum Dots ◽  
Theoretical Analysis ◽  
Quantum Wires ◽  
Quantitative Agreement ◽  
Optoelectronic Materials ◽  
Dispersion Law ◽  
Heavy Doping ◽  
Electron Dispersion ◽  
Quantum Confinements ◽  
Lattice Matched

AbstractIn this paper we have studied, the Burstein-Moss shift (BMS) in quantum wires (QWs) and quantum dots (QDs) of ternary and quaternary types of optoelectronic materials on the basis of a newly formulated electron dispersion law which occours as a result of heavy doping. It has been found, taking Hg1−xCdx.Te and In1−x.Gax.AsyP1−y lattice matched to InP as examples, that the BMS increases with :Lncreasing electron concentration and decreases with increasing film thickness in oscillatory manners for both types of quantum confinements, although the variations are totally band structure dependent. The numerical values of BMS is greatest in QDs and least in QWs together with the fact that the BMS in quaternary materials is greater than that of ternary comupounds. In addition the theoretical analysis is a quantitative agreement with the experimental datas as given elsewhere.

The Burstein-Moss Shift in Quantum Confined Infrared Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
Kamakeya P. Ghatak ◽  
Badal De
Keyword(s):  
Quantum Dots ◽  
Theoretical Analysis ◽  
Film Thickness ◽  
Quantum Wires ◽  
Quantum Confined ◽  
Infrared Materials ◽  
Lattice Matched

AbstractIn this paper we have investigated the Burstein-Moss shift in quantum wires and dots of III-V and II-VI materials on the basis of Kane and Hopfield models for the appropriate carrier dispersion laws. It is found taking Hg1−xCdxTe, In1−xGax AsyP1−y lattice matched to InP and CdS as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical value of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

Influence of Quantum Confinement on the Photoemission From Nonlinear Optical Materials

1997 ◽  
Vol 484 ◽  
Author(s):  
Amakhya P. Ghatak ◽  
P. K. Bose ◽  
Gautam Majumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Confinement ◽  
Optical Materials ◽  
Nonlinear Optical ◽  
Nonlinear Optical Materials ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

Abstractwells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of nonlinear optical materials, respectively on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p. formalism. It is found, taking CdGeAs2, GaAs and InAs, as exmaples, that the photoemission increase with increasing photon energy in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration with film thickness respectively for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

On The Photoemission From Quantum Confined Compound Semiconductors

1991 ◽  
Vol 228 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Compound Semiconductors ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper, we have studied the photoemission from quantum wells (QWs), quantum well wires (QWWs) and quantum dots (QDs) of degenerate Kane-type semiconductors, on the basis of a newly derived electron dispersion law considering all types of anisotropies within the framework of k.p formalism. It is found, taking n-Cd3 As2 as an example, that the photoemission increases with increasing photon energy in a ladder-like manner and also exhibits oscillatory dependences with changing electron concentration and with film thickness, for all types of quantum confinement. The photoemission current density is greatest in QDs and least in QWWs. In addition, the theoretical results are in agreement with the experimental observation as reported elsewhere.

Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Well ◽  
Film Thickness ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Large Magnetic Field ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

1990 ◽  
Vol 181 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Optoelectronic Materials ◽  
Large Magnetic Field ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW’s), quantum dots (QDs) and compare the same with the hulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1-xC dxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Einstein Rzlation in Quantum Wires of Tetragonal Sediconduc Tors

1990 ◽  
Vol 198 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Energy Spectrum ◽  
Film Thickness ◽  
Electron Concentration ◽  
Energy Band ◽  
Quantum Wires ◽  
Electron Energy Spectrum ◽  
Einstein Relation ◽  
Degenerate Semiconductors ◽  
Dispersion Law ◽  
Theoretical Results

ABSTRACTWe have studied the Einstein relation for the diffusivity. mobility ratio (7PT) on the basis of a newly derived electron energy spectrum in QW f tetragonal semiconductors, within the framework of K. P method by considering all types of anisotropies of the energy band parameters. It is found, taking n-Cd3 As2 as an example that the DUTZ increases with electron concentration and decreases with film thickness in an oscillatory manner respectively. The theoretical results are in good aoreement with the suggested experimental method of determining the DMR in degenerate semiconductors having arbitrary dispersion law.

Thermoelectric Power in Quantum Confined Optoelectronic Materials under Classically Large Magnetic Field

1990 ◽  
Vol 184 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Electron Concentration ◽  
Optoelectronic Materials ◽  
Large Magnetic Field ◽  
Dispersion Law ◽  
Quantum Well Wires ◽  
Electron Dispersion

ABSTRACTWe shall study the thermoelectric power under classically large magnetic field (TPM) in optoelectronic materials of quantum wells (QWs), quantum well wires (QWW's), quantum dots (QDs) and compare the same with the bulk specimens of optoelectronic materials by formulating the respective electron dispersion law. The TPM increases with decreasing electron concentration in an oscillatory manner in all the cases, taking n-Hg1−xCdxTe as an example. The TPM in QD is greatest and the least for quantum wells respectively. The thecoretical results are in agreement with the experimental observations as reported elsewhere.

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