The Burstein-Moss Shift in Quantum Confined Infrared Materials

1994 ◽  
Vol 299 ◽  
Author(s):  
Kamakeya P. Ghatak ◽  
Badal De
Keyword(s):  
Quantum Dots ◽  
Theoretical Analysis ◽  
Film Thickness ◽  
Quantum Wires ◽  
Quantum Confined ◽  
Infrared Materials ◽  
Lattice Matched

AbstractIn this paper we have investigated the Burstein-Moss shift in quantum wires and dots of III-V and II-VI materials on the basis of Kane and Hopfield models for the appropriate carrier dispersion laws. It is found taking Hg1−xCdxTe, In1−xGax AsyP1−y lattice matched to InP and CdS as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical value of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theoretical analysis is in agreement with the experimental datas as given elsewhere.

On the Moss-Burstein Shift In Quantum Confined Optoelectronic Ternary and Quaternary Materials

1997 ◽  
Vol 484 ◽  
Author(s):  
Vamakhya P. Ghatak ◽  
P. K. Bose ◽  
Gautam Majumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wires ◽  
Dispersion Law ◽  
Heavy Doping ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched

AbstractIn this paper we have studied the Burstein-Moss shift in quantum wires and dots of ternary and quaternary materials on the basis of a newly formulated electron dispersion law which occurs as a consequence of heavy doping. It is found taking Hg1−xCdxTe and In1−xGaxAsyP1−y lattice matched to InP as examples that the Burstein-Moss shift exhibits oscillatory dependences for quantum wires and dots of the said materials with respect to doping and film thickness respectively. Besides, the numerical values of the same shift is greatest in quantum dots and least in quantum wires. In addition, the theroretical analysis is in agreement with the experimental datas as given elsewhere.

On thon the Photoemission from Quantum Confined Strained III–V Systems

1995 ◽  
Vol 379 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. Nag ◽  
G. Mazumder
Keyword(s):  
Quantum Dots ◽  
Film Thickness ◽  
Quantum Wells ◽  
Electron Concentration ◽  
Quantum Confinement ◽  
Dispersion Law ◽  
Quantum Confined ◽  
Electron Dispersion ◽  
Lattice Matched ◽  
Theoretical Results

ABSTRACTIn this paper we have studied the photoemission from quantum wells (QW), quantum wells wires (QWWs) and quantum dots (QDs) of quantum confined strained III–V compounds on the basis of a newly formulated electron dispersion law. It is found taking such quantum confined Hg1–xCdxTe and In1–xGaxAsyP1–y lattice matched InP as examples that the photoemission increases with increasing energy of the incident photons in a ladder like manner and also exhibits oscillatory dependences with changing electron concentration and film thickness respectively for all types quantum confinement. The photoemitted current is greatest in strained QDs and least in unstrained QWs. In addition the theoretical results are in agreement with the experimental datas as given elsewhere.

On the Moss-Burstein Shift in Quantum Confined Optoelectronic Ternary and Quaternary Materials

1995 ◽  
Vol 417 ◽  
Author(s):  
Kamakhya P. Ghatajc ◽  
B. Nag ◽  
S. N. Biswas
Keyword(s):  
Quantum Dots ◽  
Theoretical Analysis ◽  
Quantum Wires ◽  
Quantitative Agreement ◽  
Optoelectronic Materials ◽  
Dispersion Law ◽  
Heavy Doping ◽  
Electron Dispersion ◽  
Quantum Confinements ◽  
Lattice Matched

AbstractIn this paper we have studied, the Burstein-Moss shift (BMS) in quantum wires (QWs) and quantum dots (QDs) of ternary and quaternary types of optoelectronic materials on the basis of a newly formulated electron dispersion law which occours as a result of heavy doping. It has been found, taking Hg1−xCdx.Te and In1−x.Gax.AsyP1−y lattice matched to InP as examples, that the BMS increases with :Lncreasing electron concentration and decreases with increasing film thickness in oscillatory manners for both types of quantum confinements, although the variations are totally band structure dependent. The numerical values of BMS is greatest in QDs and least in QWs together with the fact that the BMS in quaternary materials is greater than that of ternary comupounds. In addition the theoretical analysis is a quantitative agreement with the experimental datas as given elsewhere.

Thermoelectric Power in Quantum Confined Bismuth Under Classically Large Magnetic Field

1990 ◽  
Vol 216 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
S. N. Biswas
Keyword(s):  
Magnetic Field ◽  
Quantum Dots ◽  
Quantum Well ◽  
Film Thickness ◽  
Quantum Wells ◽  
Thermoelectric Power ◽  
Large Magnetic Field ◽  
Quantum Well Wires ◽  
Electron Dispersion ◽  
Theoretical Results

ABSTRACTIn this paper we studied the thermoelectric power under classically large magnetic field (TPM) in quantum wells (QWs), quantum well wires (QWWS) and quantum dots (QDs) of Bi by formulating the respective electron dispersion laws. The TPM increases with increasing film thickness in an oscillatory manner in all the cases. The TPM in QD is greatest and the least for quantum wells respectively. The theoretical results are in agreement with the experimental observations as reported elsewhere.

Zinc Blende 0D Quantum Dots to Wurtzite 1D Quantum Wires: The Oriented Attachment and Phase Change in ZnSe Nanostructures

2013 ◽  
Vol 4 (19) ◽  
pp. 3292-3297 ◽  
Author(s):  
Suresh Sarkar ◽  
Shinjita Acharya ◽  
Arup Chakraborty ◽  
Narayan Pradhan
Keyword(s):  
Quantum Dots ◽  
Phase Change ◽  
Quantum Wires ◽  
Oriented Attachment ◽  
Zinc Blende

Ultrafast Carrier Dynamics, Optical Amplification, and Lasing in Nanocrystal Quantum Dots

MRS Bulletin ◽  
2001 ◽  
Vol 26 (12) ◽  
pp. 998-1004 ◽  
Author(s):  
Victor I. Klimov ◽  
Moungi G. Bawendi
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Electronic States ◽  
Three Dimensions ◽  
Band Edge ◽  
Lasing Threshold ◽  
Wide Energy Range ◽  
Band Edge Emission ◽  
Edge States

Semiconductor materials are widely used in both optically and electrically pumped lasers. The use of semiconductor quantum wells (QWs) as optical-gain media has resulted in important advances in laser technology. QWs have a two-dimensional, step-like density of electronic states that is nonzero at the band edge, enabling a higher concentration of carriers to contribute to the band-edge emission and leading to a reduced lasing threshold, improved temperature stability, and a narrower emission line. A further enhancement in the density of the band-edge states and an associated reduction in the lasing threshold are in principle possible using quantum wires and quantum dots (QDs), in which the confinement is in two and three dimensions, respectively. In very small dots, the spacing of the electronic states is much greater than the available thermal energy (strong confinement), inhibiting thermal depopulation of the lowest electronic states. This effect should result in a lasing threshold that is temperatureinsensitive at an excitation level of only 1 electron-hole (e-h) pair per dot on average. Additionally, QDs in the strongconfinement regime have an emission wavelength that is a pronounced function of size, adding the advantage of continuous spectral tunability over a wide energy range simply by changing the size of the dots.

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