A Technique For Rapid Thick Film Sic Epitaxial Growth

1997 ◽  
Vol 483 ◽  
Author(s):  
I. Khlebnikov ◽  
T. S. Sudarshan ◽  
V. Madangarli ◽  
M. A. Capano
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Structural Quality ◽  
Epitaxial Layers ◽  
Rocking Curve ◽  
X Ray

AbstractIn this paper we demonstrate the growth of thick SiC epitaxial layers (≥100 μm) of good structural quality at a high growth rate (>100 μm/hr) by controlling the vapor dynamics during conventional physical vapor transport (PVT) process. We propose that our PVT technique be used to ‘repair’ or ‘heal’ commercially available substrates dominated by micropipes, by ‘filling up’ the micropipes through crystal growth inside the micropipe. Extensive experiments performed on thick SiC epitaxial layers grown on Lely substrates indicate that the thick epitaxial layers are of single polytype of high structural quality, with a single peak X-ray rocking curve of less than 12 arcsecs FWHM.

Improvements of the Continuous Feed-Physical Vapor Transport Technique (CF-PVT) for the Seeded Growth of 3C-SiC Crystals

2010 ◽  
Vol 645-648 ◽  
pp. 63-66 ◽  
Author(s):  
Guoli L. Sun ◽  
Irina G. Galben-Sandulache ◽  
Thierry Ouisse ◽  
Jean Marc Dedulle ◽  
Michel Pons ◽  
...  
Keyword(s):  
Growth Rate ◽  
Surface Morphology ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Seeded Growth ◽  
Grown Layer ◽  
Continuous Feed ◽  
Transport Technique

The Continuous Feed-Physical Vapor Transport Technique (CF-PVT) was optimized by considering the heating, thermal insulation and the geometry of growth cavity. The effects of seeds on the surface morphology of the grown layer have been discussed. We successfully grew 3C-SiC bulk with a diameter of 7.0 mm and 3.3 mm in height with a high growth rate of 0.8 mm/h by the CF-PVT technique.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

scholarly journals Fabrication of high-voltage 4H-SiC Schottky barrier diodes using epitaxial layers obtained at a high growth rate

2002 ◽  
Vol 122 (5) ◽  
pp. 637-643
Author(s):  
Hidekazu Tsuchida ◽  
Takashi Tsuji ◽  
Hiroyuki Fujisawa ◽  
Isaho Kamata ◽  
Tamotsu Jikimoto ◽  
...  
Keyword(s):  
Growth Rate ◽  
Schottky Barrier ◽  
High Voltage ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Schottky Barrier Diodes

Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth

2016 ◽  
Vol 858 ◽  
pp. 173-176 ◽  
Author(s):  
Hideyuki Uehigashi ◽  
Keisuke Fukada ◽  
Masahiko Ito ◽  
Isaho Kamata ◽  
Hiroaki Fujibayashi ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Epitaxial Growth ◽  
Stacking Faults ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray ◽  
Crystalline Defects ◽  
Transmission Electron

We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the characteristics of devices, we investigated the formation of variety of in-grown stacking faults (SFs) in detail. Synchrotron X-ray topography, photoluminescence (PL) and transmission electron microscopy are employed to analyze the SFs and the origins of the SF formation are discussed. The result in reducing in-grown SFs in fast epitaxial growth is also shown.

scholarly journals Influences of Powder Source Porosity on Mass Transport during AlN Crystal Growth Using Physical Vapor Transport Method

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1436
Author(s):  
Danyang Fu ◽  
Qikun Wang ◽  
Gang Zhang ◽  
Zhe Li ◽  
Jiali Huang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Mass Transport ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Growth Chamber ◽  
Physical Vapor Transport ◽  
Rate Variation ◽  
Deposition Surface ◽  
Mass Transport Process

We developed a two-dimensional (2D) transport model to investigate mass transport during bulk AlN crystal growth via the physical vapor transport (PVT) process using the finite element method (FEM), taking the powder source porosity, buoyancy, and vapor diffusion into account. The porosity effects of the powder source on mass transport under various growth conditions were investigated in detail. The simulation results show that the porosity of the powder source significantly affects the mass transport process during AlN sublimation growth. When the porosity of the powder source decreases, the growth rate becomes more uniform along the seed deposition surface, although the sublimation rate and crystal growth rate decrease, which can be attributed to the reduced specific surface area of the powder source and the reduced flow rate of Al vapor in the powder source. A flat growth interface can be achieved at a porosity of 0.2 under our specific growth conditions, which in turn facilitate the growth of high-quality AlN crystals and better yield. The decomposition of the powder source and the transport of Al vapor in the growth chamber can be suppressed by increasing the pressure. In addition, the AlN growth rate variation along the deposition surface can be attributed to the Al vapor pressure gradient caused by the temperature difference in the growth chamber.

Influence of the N/Al Ratio in the Gas Phase on the Growth of AlN by High Temperature Chemical Vapor Deposition (HTCVD)

2009 ◽  
Vol 615-617 ◽  
pp. 987-990 ◽  
Author(s):  
Arnaud Claudel ◽  
Elisabeth Blanquet ◽  
Didier Chaussende ◽  
D. Pique ◽  
Michel Pons
Keyword(s):  
Growth Rate ◽  
Gas Phase ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Bulk Growth

In order to achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) 4H SiC at 1750°C. The precursors used are ammonia NH3 and aluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Influences of N/Al ratio in the gas phase on growth rate, crystalline state and microstructure are presented. Growth rates of up to 200 µm/h have been reached for polycrystalline layers. Thermodynamic calculations were carried out and correlated to the experimental results. As-grown AlN layers were characterized by SEM and X-ray Diffraction. Surface morphology is studied by SEM and FEG-SEM and crystallographic orientations were obtained by X-ray diffraction on θ/2θ.

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

2006 ◽  
Vol 527-529 ◽  
pp. 187-190 ◽  
Author(s):  
Rachael L. Myers-Ward ◽  
Y. Shishkin ◽  
Olof Kordina ◽  
I. Haselbarth ◽  
Stephen E. Saddow
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Structural Quality ◽  
Growth Time ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

A 4H-SiC epitaxial growth process has been developed in a horizontal hot-wall CVD reactor using a standard chemistry of silane-propane-hydrogen, producing repeatable growth rates up to 32 μm/h. The growth rate was studied as a function of pressure, silane flow rate, and growth time. The structural quality of the films was determined by X-ray diffraction. A 65 μm thick epitaxial layer was grown at the 32 μm/h rate, resulting in a smooth, specular film morphology with occasional carrot-like and triangular defects. The film proved to be of high structural quality with an X-ray rocking curve FWHM value of the (0004) peak of 11 arcseconds.

Development of a high-growth rate 3C-SiC on Si CVD process

2006 ◽  
Vol 911 ◽  
Author(s):  
M. Reyes ◽  
Y. Shishkin ◽  
S. Harvey ◽  
S. E. Saddow
Keyword(s):  
Growth Rate ◽  
Mole Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Hydrogen Gas ◽  
Growth Time ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

AbstractGrowth rates from 10 to 38 μm/h were achieved for heteroepitaxial 3C-SiC on Si (100) substrates by using the propane-silane-hydrogen gas chemistry with HCl as a growth additive. A low-pressure horizontal hot-wall CVD reactor was employed to perform the deposition. The growth rate dependences on silane mole fraction, the process pressure and the growth time were determined experimentally. The growth rate dependence on silane mole fraction was found to follow a linear relationship. The 3C-SiC films were characterized by Normaski Optical Microscopy, Scanning Electron Microscopy, Fourier Transform Infrared Spectroscopy, Atomic Force Microscopy and X-ray Diffraction. The X-ray rocking curve taken on the (002) diffraction plane displayed a FWHM of 360 arcsec which indicates that the films are monocrystalline.

150 mm 4H-SiC Substrate with Low Defect Density

2016 ◽  
Vol 858 ◽  
pp. 41-44
Author(s):  
Yu Qiang Gao ◽  
Hong Yan Zhang ◽  
Yan Min Zong ◽  
Huan Huan Wang ◽  
Jian Qiu Guo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Dislocation Density ◽  
Late Stage ◽  
Defect Density ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Base Plane ◽  
High Quality ◽  
X Ray ◽  
Screw Dislocation Density

150 mm diameter 4H-SiC boules were grown by the physical vapor transport (PVT) method. Synchrotron white beam X-ray topography (SWBXT) was carried out to investigate the distribution of defects in axial slices cut from the boule. It was found that an increase of dislocations and micropipes was mainly induced by inclusions. After eliminating these inclusions, which were formed in the mid to late stage of the crystal growth, both the screw dislocation density and base plane dislocation density could be decreased down to a magnitude of 102 cm-2, which is comparable to that of high quality 100 mm diameter SiC substrates.

Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer

2009 ◽  
Vol 615-617 ◽  
pp. 67-72 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Masahiko Ito ◽  
Isaho Kamata ◽  
Masahiro Nagano
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Epitaxial Growth ◽  
High Growth ◽  
High Growth Rate ◽  
Extended Defects ◽  
Screw Dislocations ◽  
X Ray ◽  
Transmission Electron

The transfer and generation of extended defects in 4H-SiC epitaxial growth at a high growth rate are examined. An epilayer with virtually no basal plane dislocations (BPDs) is obtained using 4º off Si-face substrates, although the formation of 3C-polytype inclusions is occasionally observed. The behavior of BPDs and threading screw dislocations (TSDs) in epitaxial growth is also investigated by X-ray topography and transmission electron microscopy, and the propagation of BPDs and conversion and generation of TSDs in the epilayers are discussed.

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