Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire

1997 ◽  
Vol 482 ◽  
Author(s):  
R. D. Vispute ◽  
V. Talyansky ◽  
S. Chupoon ◽  
R. Enck ◽  
T. Dahmas ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Target Surface ◽  
Surface Region ◽  
Laser Deposition ◽  
Degree Of Crystallinity ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Ion Channeling ◽  
High Degree

AbstractWe report high quality epitaxial growth of GaN film by pulsed laser deposition technique. In this method, a KrF pulsed excimer laser was used for ablation of a polycrystalline, stoichiometric GaN target. The ablated material was deposited on a substrate kept at a distance of ∼ 7 cm from the target surface and in an NH3 background pressure of 10−5 Torr and temperature of 750°C. The films (∼0.5 μm thick) grown on AIN buffered sapphire showed a x-ray diffraction rocking curve FWHM of 4–6 arc minutes. The ion channeling minimum yield in the surface region was ∼3% indicating a high degree of crystallinity. The optical band gap was found to be 3.4 eV. The epitaxial films were shiny, and the surface RMS roughness was ∼ 5–15 nm. The electrical resistivity of these films was in the range of 10−2–102 Ω-cm with a mobility in excess of 60 cm2V-1s−1 and carrier concentration of 1017–1019cm−3.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

ZrC Thin Films Grown by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
V. Craciun ◽  
D. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Surface Region ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Crystalline Films

AbstractZrC thin films were grown on Si substrates by the pulsed laser deposition (PLD) technique. X- ray photoelectron spectroscopy, x-ray diffraction and reflectivity, variable angle spectroscopic ellipsometry, and four point probe measurements were used to investigate the composition, density, thickness, surface morphology, optical and electrical properties of the grown structures. It has been found that crystalline films could be grown only by using fluences above 6 J/cm2 and substrate temperatures in excess of 500 °C. For a fluence of 10 J/cm2 and a substrate temperature of 700 °C, highly (100)-textured ZrC films exhibiting a cubic structure (a=0.469 nm) and a density of 6.7 g/cm3 were deposited. The use of a low-pressure atmosphere of C2H2 had a beneficial effect on crystallinity and stoichiometry of the films. All films contained high levels of oxygen contamination, especially in the surface region, because of the rather reactive nature of Zr atoms.

Epitaxy of PbTio3 on (100) SrTio3 and Vicinal (100) SrTio3 by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Miscut Substrate

AbstractEpitaxial PbTiO3 films have been grown on (100) SrTiO3 substrates by pulsed laser deposition. X-ray diffraction analysis indicates pure c-axis oriented PbTiO3 films with a rocking curve FWHM of 0.25° for the 002 reflection. Thicker films (˜ 2000 Å) grown on 4° miscut SrTiO3 show mixed aaxis and c-axis PbTiO3 due to twinning along {1011} planes. The [100] axis of the a-axis domains are misoriented by 3.4° - 3.8° toward <001> substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (100) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented (˜ 90 vol. %) in an uphill direction with respect to the miscut substrate.

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

Pulsed Laser Deposition of Epitaxial Sr(RuxSn1-x)O3 Thin Film Electrodes and KNbO3/Sr(RuxSnl-x)O3 Bilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
H.-M. Christen ◽  
L. A. Boatner ◽  
L. Q. Englisht ◽  
L. A. Géa ◽  
P. J. Marrero ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
Lattice Match ◽  
X Ray ◽  
Resistivity Measurements ◽  
Ion Channeling

AbstractSr(RuxSnl-x)O3 is proposed as a new conducting oxide for use in epitaxial multilayer structures. The Sr(Ru0.48Sn0.52)O3 composition exhibits an excellent lattice match with (100)-oriented KTaO3, and films of this composition grown by pulsed laser deposition on KTaO3, SrTiO3, and LaAIO3 substrates have been analyzed by X-ray diffraction, Rutherford backscattering/ion channeling, and resistivity measurements. Epitaxial KNbO3/Sr(Ru0 48Sn0.52)O3 bilayers have been successfully grown.

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Structural Analysis of CdO2(1-X) AlX Thin Films Prepared by Pulsed-Laser Deposition

2021 ◽  
Vol 19 (10) ◽  
pp. 34-40
Author(s):  
B.Y. Taher ◽  
A.S. Ahmed ◽  
Hassan J. Alatta
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Doping Concentration ◽  
Pulsed Laser ◽  
Interplanar Distance ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Diffraction Angle ◽  
Standard Value ◽  
Diffraction Patterns

In this study, CdO2 (1-X) AlX thin films were prepared by pulsed-laser deposition. The X-ray diffraction patterns reveal that the films were polycrystalline with a cubic structure, and the composition of the material changed from CdO at the target to CdO2 in the deposited thin films. The intensity of the diffraction peak (or the texture factor) decreases with increasing hkl and has a maximum value for the (111) plane, the interplanar distance and diffraction angle has a high deviation from the standard value for the (111) plane and. This deviation is affected by doping concentration and shows its highest deviation at a doping concentration of 0.1 wt.% for the (111) and (200), and the 0.3 and 0.5 wt.% for the (210) and (220) planes, respectively. The crystalline size take a less value at plane has a high texture factor that is (111) plane and decreases with increase the doping concentration.

Magnetite/Nickel andMagnetite/Cobalt Multilayer Nanostructures Obtained by Pulsed Laser Deposition

2003 ◽  
Vol 777 ◽  
Author(s):  
Monica Sorescu ◽  
Agnieszka Grabias ◽  
Lucian Diamandescu
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Multilayer Nanostructures ◽  
Mean Grain Size ◽  
Different Temperatures ◽  
The Mean ◽  
Metal Layers ◽  
Magnetite Phase

AbstractNanostructured magnetite/T multilayers, with T = Ni, Co, Cr, have been prepared by pulsed laser deposition. The thickness of individual magnetite and metal layers takes values in the range of 5 - 40 nm with a total multilayer thickness of 100 -120 nm. X-ray diffraction has been used to study the phase characteristics as a function of thermal treatment up to 550 °C. Small amounts of maghemite and hematite were identified together with prevailing magnetite phase after treatments at different temperatures. The mean grain size of magnetite phase increases with temperature from 12 nm at room temperature to 54 nm at 550 °C. The thermal behavior of magnetite in multilayers in comparison with powder magnetite is discussed.

Heteroepitaxial Growth Of ZnO Films BY PLD

1997 ◽  
Vol 474 ◽  
Author(s):  
R. D. Vispute ◽  
V. Talyansky ◽  
Z. Trajanovic ◽  
S. Choopun ◽  
M. Downes ◽  
...  
Keyword(s):  
Oxygen Pressure ◽  
Surface Region ◽  
Optical Quality ◽  
Degree Of Crystallinity ◽  
Zno Films ◽  
Heteroepitaxial Growth ◽  
Near Surface ◽  
Ion Channeling ◽  
Deposition Parameters ◽  
High Degree

ABSTRACTHere we present our recent work on the fabrication of high crystalline and optical quality ZnO films on sapphire (001) by pulsed laser deposition. The influence of deposition parameters such as the substrate temperature, oxygen pressure, laser fluence, and pulse repetition rate on the crystalline quality of ZnO layers has been studied. The Ω-rocking curve FWHM of the (002) peak for the films grown at 750°, oxygen pressure 10−5 Torr was 0.17°. The XRD-Ф scans studies revealed that the films were epitaxial with a 30° rotation of the unit cell with respect to the sapphire to achieve a low energy configuration for epitaxial growth. The high degree of crystallinity was confirmed by ion channeling technique providing a minimum Rutherford backscattering yield of 2–3% in the near surface region (-2000Å). The atomic force microscopy revealed smooth hexagonal faceting of the films. The optical absorption edge measured by UV-Visible spectroscopy was sharp at 383 nm. Excellent crystalline properties of these epi-ZnO/sapphire heterostractures are thus promising for III-V nitride heteroepitaxy.

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