An Updated Ion Polishing System for Tem Specimen Preparation of Materials

1997 ◽  
Vol 480 ◽  
Author(s):  
R. Alani ◽  
R. J. Mitro ◽  
P. R. Swann
Keyword(s):  
Vacuum System ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Specimen Holder ◽  
Electronic Mechanism ◽  
Independent Variable ◽  
Specimen Quality ◽  
New Feature ◽  
And Performance

AbstractThe construction and performance of an improved ion milling instrument are described. The updated instrument is based upon an earlier version fixed low angle ion milling system. The updated system employs two improved guns having the ability of independent variable milling angle adjustment, while operating at high voltage in the vacuum system. The milling rate of these ion guns is typically ≈ 90μm/hr/gun pair for copper at 5keV and 10°. Designed to compliment the variable angle ion gun is a new specimen holder which permits low angle double sided milling. The combination of these two features offers numerous single or double sided milling conditions to facilitate the production of higher quality TEM specimens in less time. The range of ion gun angles encompassed is 0° to 10° for single-sided milling and 0° to ± 10° for double-sided milling. The instrument also incorporates an electronic mechanism to generate directional sector milling which benefits primarily the production of cross sectional TEM specimens and heat sensitive materials since the ion guns are turned off for a portion of time during each revolution. Another new feature of the instrument is chemical ion milling which facilitates the preparation of certain compound semiconductors. The ability of this improved ion milling instrument for rapid ion polishing and improved specimen quality is demonstrated by a number of TEM images of metals, ceramics and semiconductors.

Precision Ion Polishing System -A New Instrument for TEM Specimen Preparation of Materials

1991 ◽  
Vol 254 ◽  
Author(s):  
Reza Alani ◽  
Peter R. Swann
Keyword(s):  
High Speed ◽  
Ion Beam ◽  
Type Specimen ◽  
Vacuum System ◽  
Specimen Preparation ◽  
Ion Milling ◽  
High Voltage Power Supply ◽  
Specimen Holder ◽  
New Instrument ◽  
Work Chamber

AbstractThe article describes the design, construction and performance of a new bench top instrument for high speed ion beam thinning and polishing of materials. In this system, the combination of very low angle ion milling and powerful ion guns has led to the rapid production of high quality TEM specimens. The main subassemblies are (1) a work chamber (2) gas control system (3) vacuum system and (4) electrical system. The work chamber consists of a pair of newly designed Penning type ion guns and Faraday cups to measure ion currents. The Whisperlok™ mechanism provides specimen rotation, pneumatically driven airlock for very fast specimen exchange and transmission/reflection illumination for specimen viewing. The ion guns are mounted to deliver a nominal, 4° milling angle on the specimen surface with precision alignment of ±2° about horizontal and vertical axes. The actual thinning is undertaken from one side using a single, post-type specimen holder which minimizes the specimen heating and contamination. The ion beam current of each gun can be individually optimized by varying the flow rate of the ionizing gas. The main chamber is evacuated by diaphragm and molecular drag pumps to produce a clean, dry vacuum in the 10−6 Torr range. The discharge and accelerating voltages required for the operation of each gun are provided by a dual high voltage power supply capable of delivering ion energies in the range; 1 keV to 6keV. TEM micrographs of typical ion polished specimens of semiconductors, metals, ceramics and composites are included to illustrate the performance of the instrument.

Method for Cross-sectional Thin Specimen Preparation from a Specific Site Using a Combination of a Focused Ion Beam System and Intermediate Voltage Electron Microscope and Its Application to the Characterization of a Precipitate in a Steel

2001 ◽  
Vol 7 (3) ◽  
pp. 287-291
Author(s):  
Toshie Yaguchi ◽  
Hiroaki Matsumoto ◽  
Takeo Kamino ◽  
Tohru Ishitani ◽  
Ryoichi Urao
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Site ◽  
Specimen Preparation ◽  
Thin Specimen ◽  
Cross Sectional ◽  
Electron Detector ◽  
Specimen Holder

AbstractIn this study, we discuss a method for cross-sectional thin specimen preparation from a specific site using a combination of a focused ion beam (FIB) system and an intermediate voltage transmission electron microscope (TEM). A FIB-TEM compatible specimen holder was newly developed for the method. The thinning of the specimen using the FIB system and the observation of inside structure of the ion milled area in a TEM to localize a specific site were alternately carried out. The TEM fitted with both scanning transmitted electron detector and secondary electron detector enabled us to localize the specific site in a halfway milled specimen with the positional accuracy of better than 0.1 µm. The method was applied to the characterization of a precipitate in a steel. A submicron large precipitate was thinned exactly at its center for the characterization by a high-resolution electron microscopy and an elemental mapping.

A Method for Site Specific Characterization Using a Dedicated FIB System Combined With an Analyitical TEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 914-915
Author(s):  
T. Kamino ◽  
T. Yaguchi ◽  
H. Matsumoto ◽  
H. Kobayashi ◽  
H. Koike
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
System Stability ◽  
Specimen Preparation ◽  
Thin Specimen ◽  
Cross Sectional ◽  
Site Specific ◽  
Specimen Holder ◽  
High Resolution Tem

A method for site specific characterization of the materials using a dedicated focused ion beam(FIB) system and an analytical transmission electron microscope (TEM) was developed. Needless to say, in TEM specimen preparation using FIB system, stability of a specimen is quite important. The specimen stage employed in the developed FIB system is the one designed for high resolution TEM, and the specimen drift rate of the stage is less than lnm/min. In addition, FIB-TEM compatible specimen holder which allows milling of a specimen with the FIB system and observation of the specimen with the TEM without re-loading was developed. To obtain thin specimen from the area to be characterized correctly, confirmation of the area before final milling is needed. However, observation of cross sectional view in a FIB system is recommended because it causes damage by Ga ion irradiation. To solve this problem, we used a STEM unit as a viewer of FIB milled specimen.

Tem Specimen Preparation for Display Materials of Vacuum Fluorescent Displays

1998 ◽  
Vol 4 (S2) ◽  
pp. 870-871
Author(s):  
T. Dolukhanyan ◽  
C. Sung ◽  
S. Ahn ◽  
J. Lee
Keyword(s):  
Bulk Material ◽  
Low Cost ◽  
High Yield ◽  
Specimen Preparation ◽  
List Type ◽  
Ion Milling ◽  
Cross Sectional ◽  
Preparation Methods ◽  
Plan View ◽  
Submicron Scale

Further development of Vacuum Fluorescent Displays (Fig.l) for low cost production and high yield requires investigation of all the components on a submicron scale at various processing stages.A variety of specimen preparation methods have been used for making different types of high quality cross-sectional and plan-view TEM specimens from:1.Initial phosphor materials - ZnCdS powders admixed with conducting powder of ln2O3;2.In2O3 mixed ZnCdS phosphor layers of ready-made working VFD;3.W - filament cathodes coated with (Ba,Sr,Ca) oxides.Rapid sharing of results.Group 1 specimens were made both by direct dispersion of phosphor powder particles on the carbon coated copper grid from acetone diluted powder suspension, and by preparation of cured bulk material from the powder using Gatan G-l epoxy, followed by cutting, grinding-dimpling and final ion milling in Gatan DuoMill 600 (Fig.2).

scholarly journals Cross-sectional TEM Sample Preparation for Nanowires or Porous Films Grown on a Substrate

2007 ◽  
Vol 15 (1) ◽  
pp. 44-45
Author(s):  
Chengyu Song
Keyword(s):  
Low Temperature ◽  
Sample Preparation ◽  
Traditional Method ◽  
Sample Surface ◽  
Specimen Preparation ◽  
Air Bubbles ◽  
Ion Milling ◽  
Porous Films ◽  
Cross Sectional ◽  
Single Section

Nanowires or porous films grown on a substrate normally lack mechanical strength, and may be subject to damage during specimen preparation. When we made cross-sectional TEM specimen for this type of sample, we modified the traditional method by covering the sample with epoxy to improve the film strength, and applying single-section ion milling to protect the film from over-milling.The sample surface is first covered with G1 epoxy. We choose G1 for this application because it is relatively thick and cures at low temperature. For samples with a dense-growth of nanowires or a thick porous film, a brief moment in vacuum helps to get rid of the air bubbles in the epoxy. The glue is cured at 100 degree C for 10 minutes, until its color turns to a reddish brown. To remove the excess glue and flatten the surface, the sample is then ground and polished until the glue is less than 0.1 mm thick.

High-resolution TEM and AEM study in (Au, Tin) thin film on (100) silicon

1995 ◽  
Vol 53 ◽  
pp. 554-555
Author(s):  
J.S. Bow ◽  
Y.C. Hung ◽  
M.J. Kim ◽  
R.W. Carpenter ◽  
W.M. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
White Layer ◽  
Nitrogen Atmosphere ◽  
Pure Gold ◽  
Specimen Preparation ◽  
Resolution Limit ◽  
Ion Milling ◽  
Cross Sectional ◽  
Si Substrates ◽  
Whole Process

The cross-sectional microstructure of a (Au, TiN) thin film deposited on a (100) Si substrate without further heat treatment was studied by CTEM, HRTEM, and AEM. HTREM was performed in a Topcon 002B microscope with interpretable resolution limit of 0.18 nm, and high spatial AEM was done in a Philips 400ST field emission gun microscope at 100 kV using a Gatan 666 parallel-detection electron energy loss spectrometer. Cross-section specimens of the interface were prepared by traditional polishing and ion milling. Temperatures used in the whole process of TEM specimen preparation were below 100°C and a liquid-nitrogen-cooled cold stage was used in ion milling to prevent interaction between Au and Si.Ti was co-deposited with Au by sputtering in a nitrogen atmosphere to increase the hardness of the thin Au contact film. Fig. 1a shows the microstructure of the (Au, Ti, N)/Si contact. The features of this microstructure are very similar to the those of pure gold thin films on Si substrates annealed below the Au-Si eutectic temperature (363°C). The thin, white layer was considered to be the original Au/Si interface by Chang et al.

An Updated Gas Source Focused Ion Beam Instrument for TEM Specimen Preparation

1991 ◽  
Vol 254 ◽  
Author(s):  
Reza Alani ◽  
Joseph S. Jones ◽  
Peter R. Swann
Keyword(s):  
Focused Ion Beam ◽  
Impact Ionization ◽  
Focal Length ◽  
Ion Beam ◽  
Objective Lens ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Gas Source ◽  
And Performance ◽  
Dual Detector

AbstractThe construction and performance of an updated gas source precision ion milling system are described. The system is based on an existing focused ion beam machine which is able to image and mill selected areas of specimens that are too thick for TEM studies. The specimen image is formed using either secondary electrons or secondary ions, captured by a dual detector. The work chamber consists of three major components: the ion gun, the ion column and the specimen chamber. The ion gun is an electron impact ionization type with an optimized source size and allows the use of variety of gases. The updated system employs an objective lens with shorter focal length to enhance the resolution. The specimen chamber with an improved specimen eucentric stage, accepts side entry TEM specimen holders. This enables the specimen to move between the TEM and the instrument for further precision thinning as required without removal of the specimen from the holder and consequent risk of damage. The upgraded system resolves features <1μm in thickness. Its point milling rate for Ni is 1.4μm/min. The ability of the instrument for imaging and localized milling is demonstrated by a number of TEM images of semiconductors, metals, ceramics and composites.

Focused Ion Beam Sample Preparation of Non-Semiconductor Materials

1997 ◽  
Vol 480 ◽  
Author(s):  
M. W. Phaneuf ◽  
N. Rowlands ◽  
G. J. C. Carpenter ◽  
G. Sundaram
Keyword(s):  
Cross Sections ◽  
Automobile Industry ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Semiconductor Materials ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Cross Sectional ◽  
Galvannealed Steel

AbstractFocused Ion Beam (FIB) systems have been steadily gaining acceptance as specimen preparation tools in the semiconductor industry. This is largely due to the fact that such instruments are relatively commonplace as failure analysis tools in semiconductor houses, and are commonly used in the preparation of cross-sections for imaging under the ion beam or using an electron beam in an SEM. Additionally, the ease with which cross-sectional TEM specimens of semiconductor devices can be prepared using FIB systems has been well demonstrated. However, this technology is largely unknown outside the semiconductor industry. Relatively few references exist in the literature on the preparation of cross-sectional TEM specimens of non-semiconductor materials by FIB. This paper discusses a specific use of FIB technology in the preparation of cross-sectional TEM specimens of non-semiconductor samples that are difficult to prepare by conventional means. One example of such materials is commercial galvannealed steel sheet that is used to form corrosion resistant auto-bodies for the automobile industry. Cross-sectional TEM specimens of this material have proved difficult and time-intensive to prepare by standard polishing and ion milling techniques due to galvanneal's inherent flaking and powdering difficulties, as well as the different sputtering rates of the various Fe-Zn intermetallic phases present in the galvannealed coatings. TEM results from cross-sectional samples of commercial galvannealed steel coatings prepared by conventional ion milling and FIB techniques are compared to assess image quality, the size of the electron-transparent thin regions that can be readily prepared and the quality of samples produced by both techniques. Specimen preparation times for both techniques are reported.

scholarly journals effect of private health institution managers’ ethical leadership approach on the organizational commitment and performance of the employees

2021 ◽  
Vol 7 (Extra-D) ◽  
pp. 537-555
Author(s):  
Gülay Tamer Bakar ◽  
Salim Akyürek
Keyword(s):  
Organizational Commitment ◽  
Ethical Leadership ◽  
Health Sector ◽  
Individual Performance ◽  
Variable Model ◽  
Cross Sectional ◽  
Independent Variable ◽  
And Performance ◽  
Leadership Approaches

This research, basically focusing on the health sector, tried to specify the effect of the managers’ ethical approach on employees’ organizational commitments, performances, and the role of organizational commitments in this effect. The sampling was composed of 362 healthcare professionals. In this cross-sectional field study, an independent variable model for the ethical leadership approaches and a dependent variable model for the employees’ performances and commitments to their organizations were practiced. Data were collected through Ethical leadership, Organizational Commitment, and Individual Performance Scales. The data collected were analyzed through SPSS and AMOS package programs. The results of the analyses showed positive significant relationship between ethical leadership approaches and organizational commitment and employee’s performances. It was also observed that ethical leadership approaches had a positive and meaningful effect on affective, continuous and normative commitment, the sub-dimensions of organizational commitment, as well as the employees’ performances.

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