In Situ Ion Implantation for Quantitative SIMS Analysis
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ABSTRACTThe primary ion column of a secondary ion mass spectrometer (Cameca IMS 3f) has been used as an ion implanter to prepare calibrated standards, In situ for quantitative SIMS analysis, with an accuracy better than 10%. The technique has been used to determine oxygen concentrations in contaminated TiSi2 films by implanting a reference level of 18O into a portion of the film.
2020 ◽
Vol 117
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pp. 14688-14693
1999 ◽
Vol 147
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pp. 14-18
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1989 ◽
Vol 333
(4-5)
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pp. 507-510
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1974 ◽
Vol 32
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pp. 450-451
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