Low Thermal Conductivity Skutterudites

1997 ◽  
Vol 478 ◽  
Author(s):  
J.-P. Fleurial ◽  
T. Caillat ◽  
A. Borshchevsky

AbstractRecent experimental results on semiconductors with the skutterudite crystal structure show that these materials possess attractive transport properties and have a good potential for achieving ZT values substantially larger than for state-of-the-art thermoelectric materials. Both n-type and p-type conductivity samples have been obtained, using several preparation techniques. Associated with a low hole effective mass, very high carrier mobilities, low electrical resistivities and moderate Seebeck coefficients are obtained in p-type skutterudites. For a comparable doping level, the carrier mobilities of n-type samples are about an order of magnitude lower than the values achieved on p-type samples. However, the much larger electron effective masses and Seebeck coefficients make n-type skutterudites promising candidates as well. Unfortunately, the thermal conductivities of the binary skutterudite compounds are too large, particularly at low temperatures, to be useful for thermoelectric applications.Several approaches to the reduction of the lattice thermal conductivity in skutterudites are being pursued: heavy doping, formation of solid solutions and alloys, study of novel ternary and filled skutterudite compounds. All those approaches have already resulted in skutterudite compositions with substantially lower thermal conductivity values in these materials. Recently, superior thermoelectric properties in the moderate to high temperature range were achieved for compositions combining alloying and “filling” of the skutterudite structure. Experimental results and mechanisms responsible for low thermal conductivity in skutterudites are discussed.

2021 ◽  
Vol 59 (8) ◽  
pp. 560-566
Author(s):  
Sung-Gyu Kwak ◽  
Go-Eun Lee ◽  
Il-Ho Kim

Tetrahedrite is a promising thermoelectric material mainly due to its low thermal conductivity, a consequence of its complicated crystal structure. However, tetrahedrite has a high hole concentration; therefore, optimizing carrier concentration through doping is required to maximize the power factor. In this study, Te-doped tetrahedrites Cu12Sb4-yTeyS13 (0.1 ≤ y ≤ 0.4) were prepared using mechanical alloying and hot pressing. The mechanical alloying successfully prepared the tetrahedrites doped with Te at the Sb sites without secondary phases, and the hot pressing produced densely sintered bodies with a relative density >99.7%. As the Te content increased, the lattice constant increased from 1.0334 to 1.0346 nm, confirming the successful substitution of Te at the Sb sites. Te-doped tetrahedrites exhibited p-type characteristics, which were confirmed by the positive signs of the Hall and Seebeck coefficients. The carrier concentration decreased but the mobility increased with Te content. The electrical conductivity was relatively constant at 323–723 K, and decreased with Te substitution from 2.6 × 104 to 1.6 × 104 Sm-1 at 723 K. The Seebeck coefficient increased with temperature and Te content, achieving values of 184–204 μVK-1 at 723 K. The thermal conductivity was <1.0 Wm-1K-1, and decreased with increasing Te content. Cu12Sb3.9Te0.1S13 exhibited the highest dimensionless figure of merit (ZT = 0.80) at 723 K, achieving a high power factor (0.91 mWm-1K-2) and a low thermal conductivity (0.80 Wm-1K-1).


2000 ◽  
Vol 626 ◽  
Author(s):  
Antje Mrotzek ◽  
Kyoung-Shin Choi ◽  
Duck-Young Chung ◽  
Melissa A. Lane ◽  
John R. Ireland ◽  
...  

ABSTRACTWe present the structure and thermoelectric properties of the new quaternary selenides K1+xM4–2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22. The compounds K1+xM4-2xBi7+xSe15 (M= Sn, Pb) crystallize isostructural to A1+xPb4-2xSb7+xSe15 with A = K, Rb, while K1-xSn5-xBi11+xSe22 reveals a new structure type. In both structure types fragments of the Bi2Te3-type and the NaCl-type are connected to a three-dimensional anionic framework with K+ ions filled tunnels. The two structures vary by the size of the NaCl-type rods and are closely related to β-K2Bi8Se13 and K2.5Bi8.5Se14. The thermoelectric properties of K1+xM4-2xBi7+xSe15 (M = Sn, Pb) and K1-xSn5-xBi11+xSe22 were explored on single crystal and ingot samples. These compounds are narrow gap semiconductors and show n-type behavior with moderate Seebeck coefficients. They have very low thermal conductivity due to an extensive disorder of the metal atoms and possible “rattling” K+ ions.


MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 481-487 ◽  
Author(s):  
Norifusa Satoh ◽  
Masaji Otsuka ◽  
Yasuaki Sakurai ◽  
Takeshi Asami ◽  
Yoshitsugu Goto ◽  
...  

ABSTRACTWe examined a working hypothesis of sticky thermoelectric (TE) materials, which is inversely designed to mass-produce flexible TE sheets with lamination or roll-to-roll processes without electric conductive adhesives. Herein, we prepared p-type and n-type sticky TE materials via mixing antimony and bismuth powders with low-volatilizable organic solvents to achieve a low thermal conductivity. Since the sticky TE materials are additionally injected into punched polymer sheets to contact with the upper and bottom electrodes in the fabrication process, the sticky TE modules of ca. 2.4 mm in thickness maintained temperature differences of ca. 10°C and 40°C on a hot plate of 40 °C and 120°C under a natural-air cooling condition with a fin. In the single-cell resistance analysis, we found that 75∼150-µm bismuth powder shows lower resistance than the smaller-sized one due to the fewer number of particle-particle interfaces in the electric pass between the upper and bottom electrodes. After adjusting the printed wiring pattern for the upper and bottom electrodes, we achieved 42 mV on a hot plate (120°C) with the 6 x 6 module having 212 Ω in the total resistance. In addition to the possibility of mass production at a reasonable cost, the sticky TE materials provide a low thermal conductivity for flexible TE modules to capture low-temperature waste heat under natural-air cooling conditions with fins for the purpose of energy harvesting.


2016 ◽  
Vol 848 ◽  
pp. 454-459
Author(s):  
Cong Wu ◽  
Kang Zhao ◽  
Yu Fei Tang ◽  
Ji Yuan Ma

In order to solve the problem that low thermal conductivity of the plastics for the heat of LED, SiC/Phenolic resin for the heat of LED were fabricated combining powder metallurgy. The effects of particles diameters, content and adding nanoparticles on thermal conductivity of the fabricated composites were investigated, the mechanical properties were also characterized. The experimental results showed that the materials were obtained, and the insulation performance of the fabricated SiC/Phenolic resin was higher than the industry standard one, the thermal conductivity reached 4.1W/(m·k)-1. And the bending strength of the fabricated composites was up to 68.11MPa. The problem of low thermal conductivity of the material is expected to be solved. In addition, it is meaningful for improving LED life.


2007 ◽  
Vol 1044 ◽  
Author(s):  
Kiyoshi Fuda ◽  
Kenji Murakami ◽  
Shigeaki Sugiyama

AbstractIt seems that no satisfactory TE property has been found in n-type oxide bulk materials even though Al-doped ZnO and La-doped SrTiO3 have high thermoelectric (TE) responses. Difficulty in developing high-performance TE materials seems to lie in finding low thermal conductivity in such oxides. The purpose of this study is to find a possibility to make an n-type TE oxide bulk material having low thermal conductivity and excellent TE properties as well. For this purpose, we fabricated and examined a series of composites constructed of TiO2 and Ln-doped SrTiO3 fine crystals. The composites were prepared via two processing steps: (1) precursor oxide preparation by wet processes; (2) sintering by using spark plasma sintering (SPS) apparatus. The microscopic structure was examined by using scanning electron microscope (SEM; HITACHI S-4500 model) attached with an energy dispersive x-ray spectroscopy. The electrical conductivities and the Seebeck coefficients were measured simultaneously using an ULVAC ZEM-1 instrument in helium atmosphere. The thermal diffusivities were measured by a laser flash method in vacuum. The composites obtained here were found to commonly have a mosaic type texture constructed of TiO2 and SrTiO3 fine particles with a typical size of 500 nm. The thermal conductivity values measured for three samples with different contents are ranged between 3 and 4 Wm-1K-1 in the temperature range from room temperature to 800 C. The values are apparently lower than the value for single crystal SrTiO3 samples presented in literature. Taking account the other TE data, e.g. Seebeck coefficient and electrical conductivity, we calculated dimensionless figure of merit, ZT, to be at maximum 0.15 at 800°C.


2006 ◽  
Vol 514-516 ◽  
pp. 156-160 ◽  
Author(s):  
Luís M. Gonçalves ◽  
Carlos Couto ◽  
Pedro Alpuim ◽  
D. Michael Rowe ◽  
J. Higino Correia

The deposition and characterization of n-type Bi2Te3 and p-type Sb2Te3 semiconductor films are reported. The films were deposited by thermal co-evaporation on a 25 µm thick polyimide (kapton) substrate. The co-evaporation method is inexpensive, simple, and reliable, when compared to other techniques that need longer time periods to prepare the starting material or require more complicated and expensive deposition equipment. Seebeck coefficients of -189 µVK-1 and +140 µVK-1 and electrical resistivities of 7.7 µ0m and 15.1 µ0m were measured at room temperature on n-type and p-type films, respectively. These values are better than those reported for films deposited by co-sputtering or electrochemical deposition, and are close to those reported for films deposited by metal-organic chemical vapour deposition or flash evaporation. Because of their high figures of merit, these films will be used for the fabrication of a micro-Peltier element, useful in temperature control and laser-cooling for telecommunications.


2020 ◽  
Vol 8 (9) ◽  
pp. 4931-4937 ◽  
Author(s):  
Zhiwei Huang ◽  
Dongyang Wang ◽  
Caiyun Li ◽  
Jinfeng Wang ◽  
Guangtao Wang ◽  
...  

CdTe alloying dramatically enhanced the thermoelectric performance of p-type PbSe by enhancing Seebeck coefficients and reducing electronic thermal conductivity.


2011 ◽  
Vol 179-180 ◽  
pp. 294-297
Author(s):  
Ke Gao Liu ◽  
Shi Lei

Bulk FexCo4-xSb12 with x varies from 0.1 to 2.0 were prepared by mechanical milling (MM) and spark plasma sintering (SPS). The phases of the products were characterized by X-ray diffraction (XRD) and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk FexCo4-xSb12 are skutterudite. The electrical resistivities of the products increase first and then decrease. The Seebeck coefficients ( ) are negative when x=0.1 at 100 °C and 200 °C while positive at 300~500 °C. The products with x=0.5~2.0 at 100~500 °C are P type semiconducting materials due to their positive values. The thermal conductivities of most samples increase first and then decrease with x increasing and the maximum is up to 0.39 Wm-1K-1 when x=1.0. The ZT values at 200~500 °C increase first and then decrease with x increasing when x=0.1~1.0 and x=1.0~2.0 respectively and the maximum ZT value is 0.196 when x=1.5 at 400 °C.


Author(s):  
Tao Chen ◽  
Hongwei Ming ◽  
Xiaoying Qin ◽  
Chen Zhu ◽  
Lulu Huang ◽  
...  

As a thermoelectric material, p-type CuSbSe2 has attracted much attention due to its intrinsic low thermal conductivity and environment-friendly constituents. In this work, Sb deficient compounds CuSb1-xSe2 (x=0-0.12) are prepared...


Sign in / Sign up

Export Citation Format

Share Document