Silicon Surface Metal Contamination Measurements using Grazing-Emission XRF Spectrometry

1997 ◽  
Vol 477 ◽  
Author(s):  
S. De Gendt ◽  
K. Kenis ◽  
M. Baeyens ◽  
P. W. Mertens ◽  
M. M. Heyns ◽  
...  
Keyword(s):  
Metal Contamination ◽  
Silicon Surface ◽  
Silicon Wafers ◽  
Total Reflection ◽  
Surface Contamination ◽  
Fluorescence Spectrometry ◽  
Fluorescence Technique ◽  
Light Elements ◽  
X Ray ◽  
Surface Metal

ABSTRACTGrazing-Emission X-Ray Fluorescence Spectrometry (GEXRF) is a new analytical X-ray fluorescence technique, which like TXRF takes advantage of the total-reflection phenomenon. The main advantage of GEXRF over TXRF is its sensitivity towards light elements. This paper presents straight GEXRF and VPD-DC-GEXRF analysis results for Na, Mg, Al, K and Ca surface contamination on silicon wafers.

Total Reflection X-Ray Fluorescence (TXRF)

1994 ◽  
Vol 354 ◽  
Author(s):  
R. S. Hockett
Keyword(s):  
Synchrotron Radiation ◽  
Metal Contamination ◽  
Total Reflection ◽  
Semiconductor Processing ◽  
X Ray ◽  
Analytical Technique ◽  
Semiconductor Substrates ◽  
The Future ◽  
Surface Metal

AbstractTotal reflection X-Ray Fluorescence (TXRF) is a glancing x-ray analytical technique which is used primarily to measure surface metal contamination on semiconductor substrates. This is a review of Total reflection X-Ray Fluorescence (TXRF) applications for silicon semiconductor processing. In addition, some comments are made about the future of TXRF, and in particular, synchrotron radiation TXRF (SR-TXRF)

SurfaceSIMS, Secondary Ion Mass Spectrometry Using Oxygen Flooding: A Powerful Tool for Monitoring Surface Metal Contamination on Silicon Wafers

1995 ◽  
Vol 386 ◽  
Author(s):  
Stephen P. Smith ◽  
Larry Wang ◽  
Jon W. Erickson ◽  
Victor K. F. Chia
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectroscopy ◽  
Metal Contamination ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
Semiconductor Industry ◽  
Silicon Wafers ◽  
Analytical Technique ◽  
Surface Metal ◽  
Secondary Ion

ABSTRACTSecondary ion mass spectroscopy (SIMS) coupled with oxygen flooding of the silicon surface during analysis provides an analytical technique capable of detecting ≤1010 atoms/cm2 of many surface elemental contaminants. Of particular importance to meet the future needs of the semiconductor industry is the current ability to detect Al and Fe contamination at a level of 2×109 atoms/cm2.

TXRF High Sensitivity X-Ray Analyzer With Multi-Layer Monochromator

1993 ◽  
Vol 37 ◽  
pp. 599-605 ◽  
Author(s):  
T. Utaka ◽  
T. Shoji ◽  
K. Shimizu ◽  
T. Arai ◽  
R. Wilson
Keyword(s):  
Detection Limit ◽  
Metal Contamination ◽  
Semiconductor Industry ◽  
High Sensitivity ◽  
Silicon Wafers ◽  
Total Reflection ◽  
Near Surface ◽  
X Ray ◽  
Detection And Quantification

Total reflection X-ray Fluorescence (TXRF) has been applied to the detection and quantification of metal contamination on the surface and near-surface regions of silicon wafers in the semiconductor industry The need for improving the sensitivity and detection limit of the TXRF technique is driven by the progress in producing thinner films and finer features in the development of larger Mbit DRAMS.

The quantification of total lead in lipstick specimens by total reflection X-ray fluorescence spectrometry

2015 ◽  
Vol 44 (6) ◽  
pp. 451-457 ◽  
Author(s):  
Eric DaSilva ◽  
Alison Matthews David ◽  
Ana Pejović-Milić
Keyword(s):  
Total Reflection ◽  
Fluorescence Spectrometry ◽  
X Ray
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