Growth and Magnetic Anisotropy of Polycrystalline (110) (NiFe/Ni/NiFe)/Cu Multilayer on 4 ° TILT-CUT Si(111)

1997 ◽  
Vol 475 ◽  
Author(s):  
Yong-Jin Song ◽  
Byung-Il Lee ◽  
Seung-Ki Joo
Keyword(s):  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Rf Magnetron Sputtering ◽  
Anisotropy Constant ◽  
Preferred Orientation ◽  
Uniaxial Magnetic Anisotropy ◽  
Magnetic Anisotropy Constant ◽  
Si Wafer ◽  
Sputtering System

ABSTRACT[Cu(20Å)/NiFe(7Å)/Ni(6Å)/NiFe(7Å)]10Cu(50Å) multilayers were deposited on 4 ° tilt-cut Si(lll) using 3-gun rf magnetron sputtering system. An in-plane uniaxial magnetic anisotropy was found and the uniaxial magnetic anisotropy constant was about 3×104 erg/cm3. The multilayers on non tilt-cut Si(lll) with Cu underlayer did not show any anisotropy. The crystal structure of the multilayer on 4 ° tilt-cut Si(111) was studied using TEM work and the magnetic anisotropy is originated from the growth of (110) preferred orientation of the multilayer. When other material such as Ni or NiFe was used as an underlayer for the multilayer, the magnetic anisotropy disappeared and the crystal structure was (111). The multilayer without underlayer did not show any magnetic anisotropy either. It is thought that Cu underlayer was grown with (110) orientation on 4 ° tilt-cut Si(111) through the ledges in Si wafer and worked as a template for the growth of the multilayer.

Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system

2010 ◽  
Vol 10 (3) ◽  
pp. S463-S467 ◽  
Author(s):  
Kyu Ung Sim ◽  
Seung Wook Shin ◽  
A.V. Moholkar ◽  
Jae Ho Yun ◽  
Jong Ha Moon ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Sputtering System

Perpendicular Magnetic Anisotropy in Pt/Co/AlO Trilayer Structures Depending on AlO Thickness and Fabrication Method

2014 ◽  
Vol 616 ◽  
pp. 247-251
Author(s):  
Tim Yang ◽  
Z.Q. Wang ◽  
Makoto Kohda ◽  
Takeshi Seki ◽  
Koki Takanashi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Atomic Layer ◽  
Rf Magnetron Sputtering ◽  
Layer Deposition ◽  
Significant Damage ◽  
Arbitrary Thickness ◽  
High Kinetic Energy

We investigate the perpendicular magnetic anisotropy dependence on the AlO capping layer in Pt/Co/AlO films. AlO was deposited on Pt/Co films by RF magnetron sputtering and atomic layer deposition (ALD) with varying thickness. It is found that the prolonged deposition of thick AlO layers by RF magnetron sputtering causes significant damage to the Pt/Co underneath while AlO layers formed by ALD can be of arbitrary thickness with no damage to the magnetic properties of the films. The decline of the magnetic properties can be attributed to the method of AlO deposition for each process. In the RF magnetron sputtering, AlO atoms with high kinetic energy are ejected from a sputter target resulting in the degradation of Pt/Co films, while the process of deposition of AlO by ALD is governed by a series of chemically reactive condensations allowing for arbitrary deposition thickness of AlO.

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