Synthesis and Characterization of Copper-Iron Nitride Thin Films

MRS Advances ◽  
2015 ◽  
Vol 1 (3) ◽  
pp. 203-208 ◽  
Author(s):  
Hrishikesh Kamat ◽  
Xingwu Wang ◽  
James Parry ◽  
Yueling Qin ◽  
Hao Zeng
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Iron Nitride ◽  
X Ray Diffraction ◽  
Copper Nitride ◽  
X Ray ◽  
Structure Morphology ◽  
Layer Stacking ◽  
Potential Applications

ABSTRACTIron nitride thin films have potential applications in the biomedicine and energy. The magnetic properties of these films can be tuned by incorporating copper nitride. In this study, iron copper nitride thin films have been fabricated by magnetron sputtering technique either by co-sputtering iron nitride and copper nitride or by layer stacking of the materials. The structure, morphology and magnetic properties of the films have been studied by scanning electron microscopy, x-ray diffraction, x-ray reflectivity and vibrating sample magnetometry.

Characterization of Laser-Assisted Pulseid Laser Deiposited BaFe12O19

1992 ◽  
Vol 285 ◽  
Author(s):  
J.S. Horwitz ◽  
D.B. Chrisey ◽  
K.S. Grabowski ◽  
C.A. Carosella ◽  
P. Lubitz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Excimer Laser ◽  
Thick Films ◽  
Barium Hexaferrite ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Processing ◽  
Substrate Temperatures

ABSTRACTHigh quality, epitaxial barium hexaferrite (BaFe12O19) thin films have been deposited by pulsed laser deposition (PLD) onto basal plane sapphire at substrate temperatures of 900°C in 400 mTorr of oxygen. Thin films (< 500 nm) were smooth while thick films (> 1000 nm) had rough, polycrystalline surfaces and “soot-like” appearances. The integration of ferrite films with semiconductors will require thick films (< 70 μm) and low substrate processing temperatures (≤ 600°C). Films deposited at 600°C were mostly amorphous with the presence of some crystalline, non-hexaferrite material. In an effort to improve the quality of barium hexaferrite fihns, we have investigated the effects of excimer-laser-assisted PLD (LAPLD) on the growth of BaFe12O19. During the deposition, the substrate was illuminated with the output of a second pulsed excimer laser (KrF) weakly focused to an energy of 10 to 130 mJ/cm2. The output of the second laser was synchronized such that the delay between the vaporization laser and the annealing laser was 0 to 1 ms. The X-ray diffraction analysis of LAPLD films deposited at 600°C with an annealing fluence of 50 mJ/cm2 indicated that the films were a crystalline mixture of hexaferrite and non-hexaferrite phases. Both phases exhibited a preferred orientation characterized by narrow x-ray rocking curve widths (FWHM ∼ 1°). Magnetic properties (magnetic moment, saturation magnetization and coercive field) detennined from a vibrating sample magnetometer (VSM) also confirmed the presence of oriented hexaferrite material in the laser annealed samples. These results show clear advantages of LAPLD for improved structural and magnetic properties of BaFe12O19 deposited at substrate temperatures compatible with semiconducting materials.

STRUCTURAL AND MAGNETIC PROPERTIES OF THIN FILM OF IRON NITRIDE

2014 ◽  
Vol 21 (01) ◽  
pp. 1450013 ◽  
Author(s):  
ZOHRA NAZIR KAYANI ◽  
SAIRA RIAZ ◽  
SHAHZAD NASEEM
Keyword(s):  
Magnetic Properties ◽  
Room Temperature ◽  
Sol Gel ◽  
Copper Substrate ◽  
Iron Nitride ◽  
Vibrating Sample Magnetometer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nano Crystalline ◽  
Structure Morphology

The nano-crystalline iron nitride films with a mixture of γ- Fe 4 N , ε Fe 3 N and α Fe 2 N phases were synthesized on copper substrate by sol–gel technology. The structure, morphology and magnetic properties of the samples were characterized using X-ray diffraction, scanning electron microscopy, and vibrating sample magnetometer. The films are ferromagnetic at room temperature. Magnetic properties such as coercive forces and saturation magnetization were found to be 398 Oestered and 32.92 emu/cm3, respectively.

scholarly journals Green synthesis and characterization of hexaferrite strontium-perovskite strontium photocatalyst nanocomposites

2020 ◽  
Vol 43 (1) ◽  
pp. 26-42 ◽  
Author(s):  
Zahra Hajian Karahroudi ◽  
Kambiz Hedayati ◽  
Mojtaba Goodarzi
Keyword(s):  
Magnetic Properties ◽  
Green Synthesis ◽  
Sol Gel ◽  
Synthesis Method ◽  
Combustion Method ◽  
Lemon Juice ◽  
X Ray Diffraction ◽  
X Ray ◽  
Auto Combustion

AbstractThis study presents a preparation of SrFe12O19– SrTiO3 nanocomposite synthesis via the green auto-combustion method. At first, SrFe12O19 nanoparticles were synthesized as a core and then, SrTiO3 nanoparticles were prepared as a shell for it to manufacture SrFe12O19–SrTiO3 nanocomposite. A novel sol-gel auto-combustion green synthesis method has been used with lemon juice as a capping agent. The prepared SrFe12O19–SrTiO3 nanocomposites were characterized by using several techniques to characterize their structural, morphological and magnetic properties. The crystal structures of the nanocomposite were investigated via X-ray diffraction (XRD). The morphology of SrFe12O19– SrTiO3 nanocomposite was studied by using a scanning electron microscope (SEM). The elemental composition of the materials was analyzed by an energy-dispersive X-ray (EDX). Magnetic properties and hysteresis loop of nanopowder were characterized via vibrating sample magnetometer (VSM) in the room temperature. Fourier transform infrared spectroscopy (FTIR) spectra of the samples showed the molecular bands of nanoparticles. Also, the photocatalytic behavior of nanocomposites has been checked by the degradation of azo dyes under irradiation of ultraviolet light.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray

Application of Aluminum Nitride Thin Film for Micromachined Ultrasonic Transducers

2005 ◽  
Vol 892 ◽  
Author(s):  
Qianghua Wang ◽  
Jianzeng Xu ◽  
Changhe Huang ◽  
Gregory W Auner
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Ultrasonic Transducers ◽  
X Ray Diffraction ◽  
Effective Coupling ◽  
Resonant Frequencies ◽  
X Ray ◽  
Coupling Factors ◽  
Sandwiched Structure

AbstractThis paper reports the fabrication and characterization of micromachined ultrasonic transducers (MUT) based on piezoelectric aluminum nitride (AlN) thin films. The MUT device is composed of an Al/AlN/Al sandwiched structure overlaid on top of a silicon (Si) diaphragm. X-ray diffraction (XRD) scan shows that highly c-axis oriented AlN (002) thin films have been grown on Al/Si(100) substrates. Electrical impedance of the MUT devices is analyzed as a function of frequency. The fundamental resonant frequencies of the devices are found in the range of 65-70 kHz, which are in approximation to the theoretical calculation. The effective coupling factors of the devices are also derived as 0.18.

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

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